Abstract

In the production of nanochips and nanotransistors, when the repulsive force overcomes the surface tension, the electric field reaches a critical value or threshold. Initially, the jet moves in a linear pattern, then slowly deviates from the linear pattern and forms a complex shape along the path towards the collector. The structure and construction of nanochips and nanotransistors and the length of the jet are proportional to the applied voltage. The structure of the Taylor nanocone changes from convex to concave with changing field strength and subsequently (jet charge density). The miniaturization of components in microelectronic systems and circuits has led to significant growth of this industry in recent years. The growth rate of this industry is such that as components become smaller, the number of transistors available per unit area of each semiconductor chip and nanochip has increased. The miniaturization of these components can reduce the consumption of raw materials and energy, reduce the cost of these components, and increase their speed and efficiency. Therefore, the manufacture and development of electronic devices with smaller dimensions and greater speed and efficiency has become increasingly important. Lithography is a common method for manufacturing electronic circuits. With the help of this method, structures with a precision and dimensions of 0.1 nanometers can be manufactured. Finding techniques that can be used to use this method for the industrial production of these components (nanochips and microchips).