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ORCIDMicroelectronics Journal, Volume 39
Volume 39, Number 1, January 2008
- Ahra Lee, Hyoungho Ko
, Dong-Il Cho, Gunn Hwang:
Non-ideal behavior of a driving resonator loop in a vibratory capacitive microgyroscope. 1-6 - O. Saad, M. Baira, R. Ajjel, Hichem Maaref, B. Salem, G. Brémond, M. Gendry:
Capacitance-voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1). 7-11 - Peiqing Luo, Zhibin Zhou, Youjie Li, Shuquan Lin, Xiaoming Dou, Rongqiang Cui:
Effects of deposition pressure on the microstructural and optoelectrical properties of B-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films grown by hot-wire chemical vapor deposition. 12-19 - X. H. Wang, X. L. Wang, C. Feng, C. B. Yang, B. Z. Wang, J. X. Ran, H. L. Xiao, C. M. Wang, J. X. Wang:
Hydrogen sensors based on AlGaN/AlN/GaN HEMT. 20-23 - Yink Khai Teh, Faisal Mohd-Yasin, Florence Choong, Mamun Bin Ibne Reaz:
Design of adaptive supply voltage for sub-threshold logic based on sub-1 V bandgap reference circuit. 24-29 - Mustafa Gök, Metin Mete Özbilen:
Multi-functional floating-point MAF designs with dot product support. 30-43 - Yuehua Wu, Grigory Panaitov, Yi Zhang, Norbert Klein:
Design and fabrication of in-plane resonant microcantilevers. 44-48 - Hongming Zhou, Guiguang Xiong:
Exciton enhancement effect on the third harmonic generation in ZnS/CdSe quantum dot quantum well. 49-52 - Shuqi Zheng:
Investigation of the degradation of smooth SiGe epitaxial layer on Si substrate. 53-56 - Jong-Seok Lee, Ey Goo Kang, Man Young Sung:
Shielding region effects on a trench gate IGBT. 57-62 - Abdelkader Aissat, Said Nacer, M. Bensebti, Jean-Pierre Vilcot:
Investigation on the emission wavelength of GaInNAs/GaAs strained compressive quantum wells on GaAs substrates. 63-66 - Chih Chin Yang, Yan Kuin Su:
Well-defined electrical properties of high-strain resonant interband tunneling structure. 67-69 - Shuti Li, Guanghan Fan, Huiqing Sun, Shuwen Zheng:
The influence of thermal annealing to the characteristics of AlGaInP/GaInP multiple quantum wells light-emitting diode wafers. 70-73 - Fengchun Jiang, Congxin Xia, Shuyi Wei:
Exciton states in wurtzite and zinc-blende InGaN/GaN coupled quantum dots. 74-79 - H. Benmaza, B. Akkal, Hamza Abid, Jean-Marie Bluet, Macho Anani, Z. Bensaad:
Barrier height inhomogeneities in a Ni/SiC-6H Schottky n-type diode. 80-84 - Shiguang Shang, Changchun Zhu, Weihua Liu:
Enhanced field emission from printed CNTs by high-temperature sintering and plasma bombarding in hydrogen. 85-89 - Chih Chin Yang, Yan Kuin Su:
High performance aluminum arsenic intraband resonant microwave devices. 90-93 - Ho Seob Kim, Seungjoon Ahn, Dae Wook Kim, Tae-Sik Oh, Seong Joon Ahn:
Efficient electron beam condensing for low-energy microcolumn lithography. 94-98 - Abdesselam Hocini, T. Boumaza, Mohamed Bouchemat, F. Royer, D. Jamon, J. J. Rousseau:
Birefringence in magneto-optical rib waveguides made by SiO2/TiO2 doped with gamma-Fe2O3. 99-102 - Jordi Sacristán-Riquelme, Fredy Segura-Quijano, M. Teresa Osés:
Simple and efficient inductive telemetry system with data and power transmission. 103-111 - Sang Hyun Park, Mikko Karppinen, Quan Le, Bin Young Yoon:
Burst-mode optical transmitter with DC-coupled burst-enable signal for 2.5-Gb/s GPON system. 112-116 - Chua-Chin Wang, Chi-Chun Huang, Ching-Li Lee, Chien-Chih Hung, Li-Pin Lin:
A single-chip CMOS IF-band converter design for DVB-T receivers. 117-129 - Chua-Chin Wang, Tzung-Je Lee, U. Fat Chio, Yu-Tzu Hsiao, Jia-Jin Chen:
A 570-kbps ASK demodulator without external capacitors for low-frequency wireless bio-implants. 130-136 - Ramon Tortosa Navas, José M. de la Rosa, Francisco V. Fernández, Ángel Rodríguez-Vázquez:
Clock jitter error in multi-bit continuous-time sigma-delta modulators with non-return-to-zero feedback waveform. 137-151 - Gustavo A. Ruiz, Mercedes Granda:
Efficient implementation of 3X for radix-8 encoding. 152-159
Volume 39, Number 2, February 2008
- Adrian M. Ionescu, Liliana Diaz Olavarrieta:
Editorial. 161-164 - I. Takesue, Junji Haruyama, N. Kobayashi, Shohei Chiashi, S. Maruyama, Toshiki Sugai, Hisanori Shinohara:
High-Tc superconductivity in entirely end-bonded multi-walled carbon nanotubes. 165-170 - Hiroshi Mizuta, Shunri Oda:
Bottom-up approach to silicon nanoelectronics. 171-176 - Konstantin K. Likharev:
CMOL: Second life for silicon. 177-183 - Samuel Dennler, Marie-Claire Fromen, Marie-José Casanove, Gustavo M. Pastor, Joseph Morillo, J. Hafner:
Towards atomic-scale design: A theoretical investigation of magnetic nanoparticles and ultrathin films. 184-189 - Mustapha Hamdi, Antoine Ferreira, Gaurav Sharma, Constantinos Mavroidis:
Prototyping bio-nanorobots using molecular dynamics simulation and virtual reality. 190-201 - Valery A. Petrenko:
Landscape phage as a molecular recognition interface for detection devices. 202-207 - Amitesh Maiti:
Multiscale modeling with carbon nanotubes. 208-221 - J. Mizubayashi, Junji Haruyama, I. Takesue, Toshiya Okazaki, Hisanori Shinohara, Y. Harada, Y. Awano:
Atom-like behaviors and orbital-related Tomonaga-Luttinger liquids in carbon nano-peapod quantum dots. 222-227 - H. C. Chiamori, J. W. Brown, E. V. Adhiprakasha, E. T. Hantsoo, J. B. Straalsund, N. A. Melosh, Beth L. Pruitt:
Suspension of nanoparticles in SU-8: Processing and characterization of nanocomposite polymers. 228-236 - A. Medvid', A. Mychko, P. Onufrievs:
Self-organization of a 2D lattice on a surface of Ge single crystal after irradiation with Nd: YAG laser. 237-240 - Héctor Pettenghi, Maria J. Avedillo, José M. Quintana:
Using multi-threshold threshold gates in RTD-based logic design: A case study. 241-247
- D. C. Kulkarni, S. P. Patil, Vijaya Puri:
Properties of NixZn(1-x)Fe2O4 thick films at microwave frequencies. 248-252 - A. A. M. Farag, Adel Ashery, F. S. Terra:
Fabrication and electrical characterization of n-InSb on porous Si heterojunctions prepared by liquid phase epitaxy. 253-260 - Ali Jahanian, Morteza Saheb Zamani:
Using metro-on-chip in physical design flow for congestion and routability improvement. 261-274 - Koushik K. Das, Ching-Te Chuang, Richard B. Brown:
Reducing parasitic BJT effects in partially depleted SOI digital logic circuits. 275-285 - Matthias Völker, Johann Hauer, Josef Sauerer:
Prospect of the future of switched-current circuits with regard to future CMOS technologies. 286-292 - Ebrahim Farshidi, Sayed Masoud Sayedi:
A 1.2 V current-mode true RMS-DC converter based on the floating gate MOS translinear principle. 293-298
- Jae-sik Lee, Michael Mayer, Norman Y. Zhou, S. J. Hong:
Erratum to "Iterative optimization of tail breaking force of 1 mil wire thermosonic ball bonding processes and the influence of plasma cleaning": [Microelectronics Journal 38 (2007) 842-847]. 299
Volume 39, Numbers 3-4, March - April 2008
- Mohamed Henini, Isaac Hernández-Calderón:
Preface. 301 - M. Geller, Friedhelm Hopfer, Dieter Bimberg:
Nanostructures for nanoelectronics: No potential for room temperature applications? 302-306 - R. A. Rupani, Siddhartha Ghosh, X. Su, Pallab Bhattacharya:
Low frequency noise spectroscopy in InAs/GaAs resonant tunneling quantum dot infrared photodetectors. 307-313 - S. J. Chorley, C. G. Smith, Francisco Perez-Martinez, Jonathan Prance, Paola Atkinson, David A. Ritchie, G. A. C. Jones:
Single electron transport in a free-standing quantum dot. 314-317 - Marek Korkusinski, P. Hawrylak, Michal Zielinski, W. Sheng, Gerhard Klimeck:
Building semiconductor nanostructures atom by atom. 318-326 - Hirotaka Kobayashi, Hidekazu Kumano, Michiaki Endo, Masafumi Jo, Ikuo Suemune, Hirotaka Sasakura, S. Adachi, S. Muto:
Highly circular-polarized single photon generation from a single quantum dot at zero magnetic field. 327-330 - Per-Olof Holtz, Evgenii S. Moskalenko, Mats Larsson, K. F. Karlsson, W. V. Schoenfeld, P. M. Petroff:
Effects of external fields on the excitonic emission from single InAs/GaAs quantum dots. 331-334 - Raphael Tsu:
Revisiting tunneling via Si-quantum dots. 335-343 - Ikuo Suemune, Tatsushi Akazaki, Kazunori Tanaka, Masafumi Jo, Katsuhiro Uesugi, Michiaki Endo, Hidekazu Kumano, Eiichi Hanamura:
Role of Cooper pairs for the generation of entangled photon pairs from single quantum dots. 344-347 - Z. Barticevic, Monica Pacheco, Carlos Alberto Duque, Luiz Eduardo Oliveira:
Magnetoexciton states and diamagnetic shifts in GaAs-Ga1-xAlxAs quantum dots/ultrathin quantum wells under growth-direction magnetic fields. 348-350 - Vyacheslav Alexander Elyukhin:
On way to ideal quantum dots. 351-353 - R. Franco, Jereson Silva Valencia, M. S. Figueira:
Linear conductance through parallel coupled quantum dots. 354-358 - V. Mlinar, François M. Peeters:
Tuning of the optical properties of [11k] grown InAs quantum dots by the capping layer. 359-361 - Nathan Bickel, Patrick LiKamWa:
Etched quantum dots for all-optical and electro-optical switches. 362-364 - M. D. Blumenthal, B. Kaestner, L. Li, S. Giblin, T. J. B. M. Janssen, M. Pepper, D. Anderson, G. Jones, David A. Ritchie:
Electron pumping through quantum dots defined in parallel etched quantum wires. 365-368 - Jong Chang Yi:
Miniband properties of superlattice quantum dot arrays fabricated by the edge-defined nanowires. 369-374 - Karel Král:
Non-delta-function electronic spectral densities in individual quantum dots. 375-377 - Ilia Davidovich Mikhailov, Luis Francisco García, Jairo Humberto Marín:
Vertically coupled quantum dots charged by exciton. 378-382 - S. T. Pérez-Merchancano, R. Franco, Jereson Silva Valencia:
Impurity states in a spherical GaAs-Ga1-x AlxAs quantum dots: Effects of hydrostatic pressure. 383-386 - Y. Valenzuela, R. Franco, Jereson Silva Valencia:
Lateral Fano resonance and Kondo effect in the strong coupling regime of a quantum dot embedded in a quantum wire. 387-389 - N. Porras-Montenegro, C. A. Perdomo-Leiva, E. Reyes-Gómez, H. S. Brandi, L. E. Oliveira:
Effect of the Dresselhaus spin splitting on the effective Landé g-factor in GaAs-(Ga, Al)As quantum wells under in-plane or growth-direction magnetic fields. 390-393 - Pedro Pereyra, Arturo Robledo-Martinez, M. Morales-Luna:
The effect of complex and negative indices in the transmission of electromagnetic waves through superlattices. 394-397 - Luiz Eduardo Oliveira, M. de Dios-Leyva, Carlos Alberto Duque:
Direct and indirect exciton states in GaAs-(Ga, Al)As double quantum wells under crossed electric and magnetic fields. 398-401 - F. J. Culchac, N. Porras-Montenegro, J. C. Granada, A. Latgé:
Energy spectrum in a concentric double quantum ring of GaAs-(Ga, Al)As under applied magnetic fields. 402-406 - Carlos Alberto Duque, M. de Dios-Leyva, Luiz Eduardo Oliveira:
Exciton diamagnetic shift in GaAs/Ga1-xAlxAs quantum wells under in-plane magnetic fields. 407-410 - Ludvik Smrcka, Nataliya A. Goncharuk, P. Svoboda, P. Vasek, Yu. Krupko, Werner Wegscheider:
Electron magnetotransport in GaAs/AlGaAs superlattices with weak and strong inter-well coupling. 411-413 - X. A. Pichardo, V. M. González-Robles, S. J. Vlaev:
Mean lifetimes of quasi-bound electronic states in rectangular GaAs/AlGaAs barriers. 414-417 - T. Kryshtab, José A. Andraca Adame, L. V. Borkovska, N. O. Korsunska, Ye. F. Venger, Yu. G. Sadofyev:
Effect of CdTe monolayer insertion on CdZnTe/ZnTe quantum well characteristics. 418-422 - Isaac Rodríguez-Vargas, O. Y. Sánchez-Barbosa, D. A. Contreras-Solorio, S. J. Vlaev:
Miniband structure of parabolic GaAs/AlxGa1-xAs superlattices. 423-426 - Juan C. Salcedo-Reyes:
Kinematic study of refraction properties of an opal-based photonic crystal. 427-430 - E. Tangarife, S. Y. López, M. de Dios-Leyva, Luiz Eduardo Oliveira, Carlos Alberto Duque:
Effects of hydrostatic pressure and crossed electric and magnetic fields on shallow-donor states in GaAs/Ga1-xAlxAs quantum wells. 431-434 - D. A. Contreras-Solorio, Jesus Madrigal-Melchor, Stoyan Jelev-Vlaev, A. Enciso, H. Hernández-Cocoletzi:
Study of the electronic fundamental transition of zincblende InN/InGaN quantum wells. 435-437 - Isaac Rodríguez-Vargas, Miguel Eduardo Mora-Ramos, Carlos Alberto Duque:
Influence of the hydrostatic pressure onto the electronic and transport properties of n-type double delta-doped GaAs quantum wells. 438-441 - Stoyan Jelev-Vlaev, Jesus Madrigal-Melchor, V. M. González-Robles, D. A. Contreras-Solorio:
Quasi-bound electronic states in parabolic GaAs/AlGaAs quantum wells and barriers. 442-446 - M. R. López, G. González de la Cruz:
Dependence of the photoluminescence energy and carrier lifetime of the carrier density in nitride quantum well. 447-449 - S. M. Ramos-Arteaga, N. Porras-Montenegro, Gerardo J. Vázquez, Marcelo del Castillo-Mussot:
Effects of geometry, applied hydrostatic pressure and magnetic field on the electron-hole transition energy in a GaAs-Ga1-xAlxAs pillbox immersed in a system of Ga1-yAlyAs. 450-454 - Andrey Chaves, J. Costa e Silva, José Alexander de King Freire, Gil de Aquino Farias:
The role of surface roughness on the electron confinement in semiconductor quantum rings. 455-458 - E. Moncada, F. Segovia, J. C. Granada:
Effect of eccentricity and boundary conditions on the edge superconducting states in mesoscopic rings. 459-462 - P. C. M. Machado, F. A. P. Osório, A. N. Borges:
Polaronic effects on the collective excitation energies in a quantum wire. 463-465 - Pablo Villamil, Carlos Cabra, N. Porras-Montenegro:
Polaron effects on the energy of a hydrogenic donor impurity in GaAs-(Ga, Al)As quantum-well wires. 466-471 - Pedro Alfaro, Miguel Cruz, Chumin Wang:
Vibrational states in low-dimensional structures: An application to silicon quantum wires. 472-474 - M. Rangus, Maja Remskar, A. Mrzel:
Preparation of vertically aligned bundles of Mo6S9-xIx (4.5x<6) nanowires. 475-477 - Detlev Grützmacher, Li Zhang, Lixin Dong, Dominik J. Bell, Bradley J. Nelson, A. Prinz, Elisabeth Ruh:
Ultra flexible SiGe/Si/Cr nanosprings. 478-481 - J. Torres, H. M. Martinez, José Edgar Alfonso, L. D. López C:
Optoelectronic study in porous silicon thin films. 482-484 - Moritz Brehm, T. Suzuki, Zhenyang Zhong, Thomas Fromherz, Julian Stangl, G. Hesser, Stefan Birner, Friedrich Schäffler, Günther Bauer:
Bandstructure and photoluminescence of SiGe islands with controlled Ge concentration. 485-488 - Godofredo García Salgado, R. Hernández, Javier Martínez, Tomás Díaz, Héctor Juárez, Enrique Rosendo, Reina Galeazzi, A. García, Gabriel Juárez:
Fabrication, characterization, and analysis of photodetectors metal-porous silicon with different geometry and thickness of the porous silicon layer. 489-493 - M. Morales Rodríguez, J. M. Rivas, A. I. Diaz Cano, Tetyana V. Torchynska, J. Palacios Gomez, G. G. Gasga, Sergio Jiménez-Sandoval, Marina Mynbaeva:
Comparative investigation of optical and structural properties of porous SiC. 494-498 - Danilo R. Huanca, Francisco Javier Ramirez Fernandez, Walter J. Salcedo:
Porous silicon optical cavity structure applied to high sensitivity organic solvent sensor. 499-506 - A. I. Diaz Cano, T. V. Torchynska, J. E. Urbina-Alvarez, Gabriel Romero-Paredes Rubio, Sergio Jiménez-Sandoval, Y. V. Vorobiev:
Porous SiC layers on Si nanowire surface. 507-511 - Andreas Fissel, Apurba Laha, E. Bugiel, D. Kühne, M. Czernohorsky, Rytis Dargis, H. Jörg Osten:
Silicon in functional epitaxial oxides: A new group of nanostructures. 512-517 - Serguei Novikov, J. Sinkkonen, Timur Nikitin, L. Khriachtchev, M. Räsänen, E. Haimi:
Free-standing SiO2 films containing Si nanocrystals directly suitable for transmission electron microscopy. 518-522 - David Guzmán, Miguel Cruz, Chumin Wang:
Electronic and optical properties of ordered porous germanium. 523-525 - Mi Jung, Seok Lee, Young Tae Byun, Young Min Jhon, Sun Ho Kim, Deok-Ha Woo, Sun-il Mho:
Characteristics and fabrication of nanohole array on InP semiconductor substrate using nanoporous alumina. 526-528 - Rodrigo Segura, Marcos Flores, Samuel Hevia, Patricio Häberle:
Synthesis, characterization and spectroscopy of carbon based nanoscale materials. 529-533 - J. Milton Pereira Jr., P. Vasilopoulos, François M. Peeters:
Resonant tunneling in graphene microstructures. 534-536 - Luis Rosales, Pedro A. Orellana, Z. Barticevic, Monica Pacheco:
Transport properties of graphene nanoribbon heterostructures. 537-540 - T. H. Ghong, T. J. Kim, S. Y. Lee, Y. D. Kim, J. J. Kim, Hisao Makino, T. Yao:
Vacuum UV spectroscopic ellipsometry study on Ga1-xCrxN(0<=x<=0.1) alloy films. 541-543 - O. Arnache, Axel Hoffmann, D. Giratá:
Effect of Fe doping on structural and magnetic properties of La2/3Ca1/3Mn1-yFeyO3 (y=0-0.03) thin films. 544-547 - L. C. Moreno, Doris Cadavid, J. E. Rodríguez:
Thermoelectric power factor of LSCoO compounds. 548-550 - Ana Martínez, J. Morales, Pedro Salas, Carlos Angeles-Chávez, Luis A. Díaz-Torres, E. De la Rosa:
Synthesis and photoluminescence of Y2O3: Yb3+-Er3+ nanofibers. 551-555 - O. Morán, E. Baca, F. A. Pérez:
Depression of the superconducting critical temperature and finite-size scaling relation in YBa2Cu3O7-delta/La2/3Ca1/3MnO3 bilayers. 556-559 - B. Aguilar, O. Navarro, M. Avignon:
Spin polarization in ordered and disordered double-perovskites. 560-562 - Miguel Grizalez, M. Jairo Arbey Rodríguez, Jesús Heiras, Pedro Prieto:
Tb0.5Bi0.5MnO3: New material. A DFT study. 563-565 - Min Kai Lee, E. V. Charnaya, Cheng Tien:
Self-diffusion slowdown in liquid indium and gallium metals under nanoconfinement. 566-569 - Yong Woo Jung, Jae Jin Yoon, Jun Seok Byun, Young Dong Kim:
Dielectric function analysis of ZnSe and CdSe using parametric semiconductor model. 570-572 - F. A. P. Osório, R. B. de Almeida, A. N. Borges, P. C. M. Machado:
Magnetopolaron effects on the donor states in InP. 573-575 - S. T. Pérez-Merchancano, G. E. Marques, L. E. Bolivar-Marinez:
Optical transitions in new trends organic materials. 576-578 - G. Elizabeth Escorcia-Salas, José Sierra Ortega, M. Jairo Arbey Rodríguez:
Influence of Zr concentration on crystalline structure and its electronic properties in the new ZrxAl1-xN compound in wurtzite phase: An ab initio study. 579-581 - Adriana E. Martínez-Cantón, Miguel García-Rocha, Nuria Garro, Isaac Hernández-Calderón, Andres Cantarero, R. Ortega-Martínez:
Study of the recombination around the excitonic region of MBE ZnSe: Cl thin films. 582-585 - Crisóforo Morales, Héctor Juárez, Tomás Díaz, Yasuhiro Matsumoto, Enrique Rosendo, Godofredo Garcia, M. Rubin, F. Mora, Mauricio Pacio, A. García:
Low temperature SnO2 films deposited by APCVD. 586-588 - L. V. Borkovska, N. O. Korsunska, Vasyl Kladko, Mykola Slobodyan, O. Yefanov, Ye. F. Venger, T. Kryshtab, Yu. G. Sadofyev, I. Kazakov:
A new type of structural defects in CdZnSe/ZnSe heterostructures. 589-593 - Adrián Alfaro-Martínez, Isaac Hernández-Calderón:
Single-peak excitonic emission of CdSe ultra-thin quantum wells finished with fractional monolayers. 594-596 - M. F. O'Dwyer, Roger A. Lewis, Chao Zhang:
Thermionic refrigeration in low-dimensional structures. 597-600 - A. G. U. Perera, G. Ariyawansa, P. V. V. Jayaweera, S. G. Matsik, M. Buchanan, H. C. Liu:
Semiconductor terahertz detectors and absorption enhancement using plasmons. 601-606 - V. Semet, Vu Thien Binh, Raphael Tsu:
Shaping electron field emission by ultrathin multilayered structure cathodes. 607-616 - Tim LaFave, Raphael Tsu:
Capacitance: A property of nanoscale materials based on spatial symmetry of discrete electrons. 617-623 - N. V. Demarina, Alvydas Lisauskas, Hartmut G. Roskos:
Electron ensemble coherence and terahertz radiation amplification in a cascade superlattice structure. 624-627 - Milan Orlita, Nataliya A. Goncharuk, Roman Grill, Ludvik Smrcka:
Electron dynamics in superlattices subject to crossed magnetic and electric fields. 628-630 - Samson Mil'shtein, A. Churi, J. Palma:
Bipolar transistor with quantum well base. 631-634 - Harold Paredes Gutiérrez, S. T. Pérez-Merchancano, G. E. Marques:
Spin effect on the resonant tunneling characteristics of a double-barrier heterostructures under longitudinal stresses. 635-637 - Lukasz Piskorski, Robert P. Sarzala, Wlodzimierz Nakwaski:
Computer simulation of an operation of the GaInP/AlGaInP QW VCSELs: Excitation of various transverse LPij modes. 638-640 - Krzysztof Gutowski, Robert P. Sarzala, Wlodzimierz Nakwaski:
Threshold analysis of highly detuned long-wavelength GaAs-based GaInNAsSb/GaNAsQWVCSELs. 641-643 - Daniel A. May-Arrioja, Patrick LiKamWa:
Reconfigurable 1×4 InP-based optical switch. 644-647 - J. C. Martínez-Orozco, Isaac Rodríguez-Vargas, Miguel Eduardo Mora-Ramos, Carlos Alberto Duque:
Energy states in GaAs delta-doped field effect transistors under hydrostatic pressure. 648-650 - Héctor Juárez, Tomás Díaz, Mauricio Pacio, C. Pacheco, E. Rosendo, G. García Salgado, M. Rubin, G. Romero, A. García, C. Morales:
Analog switch device using a MOS structure. 651-655 - M. F. O'Dwyer, T. E. Humphrey, Roger A. Lewis, Chao Zhang:
Electronic and thermal transport in hot carrier solar cells with low-dimensional contacts. 656-659 - Daniel A. May-Arrioja, Patrick LiKamWa, I. Shubin, P. K. L. Yu:
Integrated InGaAsP MQW Mach-Zehnder modulator. 660-663 - Victor Ovchinnikov:
Formation and characterization of surface metal nanostructures with tunable optical properties. 664-668 - Samson Mil'shtein, Peter Ersland:
Progress of quantum electronics and the future of wireless technologies. 669-673 - Francisco Perez-Martinez, K. D. Petersson, Ian Farrer, D. Anderson, G. A. C. Jones, David A. Ritchie, C. G. Smith:
Realization of a GaAs/AlGaAs-based quantum cellular automata cell. 674-677 - J. Plaza Castillo, Alfonso Torres-Jácome, O. Malik, N. Torres López:
Very shallow boron junctions in Si by implantation and SOD diffusion obtained by RTP. 678-681 - Alberto Pretel, John H. Reina, William R. Aguirre-Contreras:
Excitonic dynamics of a quantum dot coupled to a laser-driven semiconductor microcavity. 682-684 - Igor A. Sukhoivanov, I. V. Guryev, Jose A. Andrade-Lucio, E. Alvarado Mendez, Monica Trejo-Duran, Miguel Torres-Cisneros:
Photonic density of states maps for design of photonic crystal devices. 685-689 - S. O. Yakushev, Oleksiy V. Shulika, S. I. Petrov, Igor A. Sukhoivanov:
Chirp compression with single chirped mirrors and its assembly. 690-695 - John H. Reina, Adel Bririd:
Path integral approach to dissipation in solid-state qubits. 696-698 - Gerardo A. Paz-Silva, John H. Reina:
Characterizing total correlations in multipartite systems. 699-701
Volume 39, Number 5, May 2008
- Marco Pifferi, Fabio Ducati, Hans Brekelmans, Lorenzo Tripodi, Kostas Doris, Mattia Borgarino:
A broadband RF 65 nm CMOS front-end for cable TV reception. 703-710 - Yan Sun, Ganhua Feng, George Georgiou, Edip Niver, Karen Noe, Ken Chin:
Center embossed diaphragm design guidelines and Fabry-Perot diaphragm fiber optic sensor. 711-716 - Insoo Byun, Jooran Yang, Sekwang Park:
Fabrication of a new micro bio chip and flow cell cytometry system using Bio-MEMS technology. 717-722 - Yanlong Meng, Wenfa Xie, Ning Zhang, Shufen Chen, Jiang Li, Wei Hu, Yi Zhao, Jingying Hou, Shiyong Liu:
Effective hole-injection layer for non-doped inverted top-emitting organic light-emitting devices. 723-726 - Madnarski Sutikno, Uda Hashim, Zul Azhar Zahid Jamal:
A simple oxidation technique for quantum dot dimension shrinkage and tunnel barriers generation. 727-731 - P. H. Yannakopoulos, A. P. Skountzos, Marián Veselý:
Influence of ionizing radiation in electronic and optoelectronic properties of III-V semiconductor compounds. 732-736 - G. E. Zardas, P. H. Yannakopoulos, Chrys I. Symeonides, Marián Veselý, P. C. Euthymiou:
A study of electron transition in the energy gap of SI-GaAs with photoconductivity spectra and under alpha-particle irradiation. 737-739 - F. Diaz, Volodymyr Grimalsky, Margarita Tecpoyotl-Torres, J. Escobedo-Alatorre, Svetlana V. Koshevaya:
Excitation of hypersound in n-GaN films. 740-743 - Ching-Liang Dai, Pin-Hsu Kao, Yao-Wei Tai, Chyan-Chyi Wu:
Micro FET pressure sensor manufactured using CMOS-MEMS technique. 744-749 - Jinghong Chen:
A circuit-compatible analytical device model for ballistic nanowire transistors. 750-755 - Mohammad Shavezipur, Amir Khajepour, S. M. Hashemi:
A novel linearly tunable butterfly-shape MEMS capacitor. 756-762 - Wei Fen Jiang, Long Yu Li, Shun Hua Xiao, Yong Fen Dong, Xin Jian Li:
Study on the vacuum breakdown in field emission of a nest array of multi-walled carbon nanotube/silicon nanoporous pillar array. 763-767 - Antonela Dima, Francesco Giuseppe Della Corte, C. J. Williams, K. G. Watkins, G. Dearden, N. O'Hare, Maurizio Casalino, Ivo Rendina, Mihai O. Dima:
Silicon nano-particles in SiO2 sol-gel film for nano-crystal memory device applications. 768-770 - Jijun Xiong, Jian Wang, Wendong Zhang, Chenyang Xue, Binzhen Zhang, Jie Hu:
Piezoresistive effect in GaAs/InxGa1-xAs/AlAs resonant tunneling diodes for application in micromechanical sensors. 771-776 - Lunchun Guo, Xiaoliang Wang, Cuimei Wang, Hongling Xiao, Junxue Ran, Weijun Luo, Xiaoyan Wang, Baozhu Wang, Cebao Fang, Guoxin Hu:
The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure. 777-781 - Wenhui Lu, Hang Song, Yixin Jin, Haifeng Zhao, Zhiming Li, Hong Jiang, Guoqing Miao:
Improved field emission characteristic of carbon nanotubes by an Ag micro-particle intermediation layer. 782-785 - Guozhu Wei, Sheng Wang, Guangyu Yi:
Stark effect of electrons in semiconducting rectangular quantum boxes. 786-791 - S. Youssef, R. Al Asmar, J. Podlecki, M. Abdallah, Doumit Zaouk, A. Foucaran:
Preliminary study on pyroelectric lithium tantalite by a novel electrostatic spray pyrolysis technique. 792-796 - Khizar-ul-Haq, M. A. Khan, U. S. Qurashi, Abdul Majid:
Interaction of alpha radiation with iron-doped n-type silicon. 797-801 - Jing-Quan Liu, Hua-Bin Fang, Zheng-Yi Xu, Xin-Hui Mao, Xiu-Cheng Shen, Di Chen, Hang Liao, Bing-Chu Cai:
A MEMS-based piezoelectric power generator array for vibration energy harvesting. 802-806 - Huizhao Zhuang, Shiying Zhang, Chengshan Xue, Baoli Li, Jiabing Shen, Dexiao Wang:
Effect of ammoniating temperature on structural and morphologic properties of nanostructured GaN. 807-811 - Chinnaiyan Senthilpari, Ajay Kumar Singh, Krishna M. Diwakar:
Design of a low-power, high performance, 8×8 bit multiplier using a Shannon-based adder cell. 812-821 - V. Girish, Jayadeva, Saeid Nooshabadi:
Design methodology for configurable analog to digital conversion using support vector machines. 822-827 - R. Habchi, C. Salame, R. El Bitar, P. Mialhe:
Switching times variation of MOSFET devices with temperature and high-field stress. 828-831 - Chua-Chin Wang, Chi-Chun Huang, Sheng-Lun Tseng:
A low-power ADPLL using feedback DCO quarterly disabled in time domain. 832-840 - Ole Hirsch, Paul Alexander, Lynn F. Gladden:
Techniques for cancellation of interfering multiple reflections in terahertz time-domain measurements. 841-848
Volume 39, Number 6, June 2008
- Vitezslav Benda:
Power semiconductor devices and integrated circuits. 849-850 - Václav Papez, B. Kojecký, D. Sámal:
Reliability of reverse properties of power semiconductor devices: : Influence of surface dielectric layer and its experimental verification. 851-856 - S. Milady, D. Silber, Franz-Josef Niedernostheide, Hans Peter Felsl:
Different types of avalanche-induced moving current filaments under the influence of doping inhomogeneities. 857-867 - Birk Heinze, Josef Lutz, Hans Peter Felsl, Hans-Joachim Schulze:
Ruggedness analysis of 3.3 kV high voltage diodes considering various buffer structures and edge terminations. 868-877 - J. Vobecký, Pavel Hazdra:
Dynamic avalanche in diodes with local lifetime control by means of palladium. 878-883 - J. Kozísek, Z. Machacek, Vitezslav Benda:
Monitoring of carrier lifetime distribution in high power semiconductor device technology. 884-889 - Vincenzo Enea, D. Kroell, M. Messina, Cesare Ronsisvalle:
Theoretical study about the RBSOA of a monolithic ESBT® (emitter-switched bipolar transistor) versus the saturation level before the switching-off. 890-898 - Noel Y. A. Shammas, Ruchira Withanage, Dinesh Chamund:
Optimisation of the number of IGBT devices in a series-parallel string. 899-907 - In-Hwan Ji, Min-Woo Ha, Young-Hwan Choi, Seung-Chul Lee, Chong-Man Yun, Min-Koo Han:
A new fault current-sensing scheme for fast fault protection of the insulated gate bipolar transistor. 908-913 - L. Théolier, Karine Isoird, H. Tranduc, Frederic Morancho, Jaume Roig, Yann Weber, Evgueniy N. Stefanov, Jean-Michel Reynes:
Switching performance of 65 V vertical N-channel FLYMOSFETs. 914-921 - Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo:
Superjunction LDMOS on thick-SOI technology for RF applications. 922-927
Volume 39, Number 7, July 2008
- Suresh V. Garimella, Amy S. Fleischer:
Foreword. 929 - Raj Yavatkar, Murli Tirumala:
Platform wide innovations to overcome thermal challenges. 930-941 - S. Kubota, A. Taguchi, K. Yazawa:
Thermal challenges deriving from the advances of display technologies. 942-949 - Anuradha Bulusu, D. Greg Walker:
One-dimensional thin-film phonon transport with generation. 950-956 - Vaibhav Bahadur, Suresh V. Garimella:
Energy minimization-based analysis of electrowetting for microelectronics cooling applications. 957-965 - Herman Oprins, J. Danneels, B. Van Ham, Bart Vandevelde, Martine Baelmans:
Convection heat transfer in electrostatic actuated liquid droplets for electronics cooling. 966-974 - Thomas Baummer, Edvin Cetegen, Michael Ohadi, Serguei Dessiatoun:
Force-fed evaporation and condensation utilizing advanced micro-structured surfaces and micro-channels. 975-980 - Younès Ezzahri, G. Zeng, K. Fukutani, Zhixi Bian, Ali Shakouri:
A comparison of thin film microrefrigerators based on Si/SiGe superlattice and bulk SiGe. 981-991 - Rajiv Mongia, A. Bhattacharya, Himanshu Pokharna:
Skin cooling and other challenges in future mobile form factor computing devices. 992-1000 - B. Holland, N. Ozman, Richard A. Wirtz:
Flow boiling of FC-72 from a screen laminate extended surface matrix. 1001-1007 - Peter E. Raad, Pavel L. Komarov, Mihai G. Burzo:
Thermal characterization of embedded electronic features by an integrated system of CCD thermography and self-adaptive numerical modeling. 1008-1015 - A. Whelan, Y. Joshi, W. King:
Improved compact thermal model for studying 3-D interconnect structures with low-k dielectrics. 1016-1022 - Sara McAllister, Van P. Carey, Amip Shah, Cullen E. Bash, Chandrakant D. Patel:
Strategies for effective use of exergy-based modeling of data center thermal management systems. 1023-1029
Volume 39, Number 8, August 2008
- Bernard Courtois:
European Nano Systems 2006. 1031 - Eleftherios Kolonis, Michael Nicolaidis:
Towards a holistic CAD platform for nanotechnologies. 1032-1040 - Ferran Martorell, Antonio Rubio:
Cell architecture for nanoelectronic design. 1041-1050 - Mustapha Hamdi, Antoine Ferreira:
DNA nanorobotics. 1051-1059 - Paata J. Kervalishvili, Alexander Lagutin:
Nanostructures, magnetic semiconductors and spintronics. 1060-1065 - Francesco Tafuri, Arturo Tagliacozzo, Detlef Born, Daniela Stornaiuolo, Emilia Gambale, Davide Dalena, Procolo Lucignano, B. Jouault, Floriana Lombardi, Antonio Barone, Boris L. Altshuler:
Coherent quasiparticle transport in grain boundary junctions employing high-Tc superconductors. 1066-1069 - Pavel Hazdra, Jan Voves, J. Oswald, K. Kuldová, A. Hospodková, Eduard Hulicius, Jirí Pangrác:
Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots. 1070-1074
- Chyuan Haur Kao, C. S. Chen, C. H. Lee:
Charge-trapping properties of poly-silicon oxides by rapid thermal N2O process. 1075-1079 - Caizhen Zhang, Su Liu:
Characteristics of beta-SiC/Si heterojunction with a SiGe buffer film. 1080-1082 - Jingye Xu, Vivek Nigam, Abinash Roy, Masud H. Chowdhury:
Compound noise separation in digital circuits using blind source separation. 1083-1092 - Rajeshwary Tayade, Jacob A. Abraham:
Small-delay defect detection in the presence of process variations. 1093-1100
Volume 39, Number 9, September 2008
- M. J. Rizvi, Chris Bailey, Hua Lu:
Failure mechanisms of ACF joints under isothermal ageing. 1101-1107 - Weijun Luo, Xiaoliang Wang, Hongling Xiao, Cuimei Wang, Junxue Ran, Lunchun Guo, Jianping Li, Hongxin Liu, Yanling Chen, Fuhua Yang, Jinmin Li:
Growth and fabrication of AlGaN/GaN HEMT based on Si(1 1 1) substrates by MOCVD. 1108-1111 - Haogang Cai, Zhuoqing Yang, Guifu Ding, Xiao-Lin Zhao:
Fabrication of a MEMS inertia switch on quartz substrate and evaluation of its threshold acceleration. 1112-1119 - Yanghai Gui, Shumian Li, Jiaqiang Xu, Chao Li:
Study on TiO2-doped ZnO thick film gas sensors enhanced by UV light at room temperature. 1120-1125 - Shi-Long Lv, Zhi-Tang Song, Song-Lin Feng:
Fabrication of arrays of line with nanoscale width and large length by electron beam lithography with high-precision stage. 1126-1129 - Gilles Jacquemod, Lionel Geynet, Benjamin Nicolle, Emeric de Foucauld, William Tatinian, Pierre Vincent:
Design and modelling of a multi-standard fractional PLL in CMOS/SOI technology. 1130-1139 - Jin Seok Yang, Jung Ho Park, Seong-Il Kim, Seo Young Kim, Yong Tae Kim, Il Ki Han:
I-V characteristics of a methanol sensor for direct methanol fuel cell (DMFC) as a function of deposited platinum (Pt) thickness. 1140-1143 - Daniel J. Gargas, Donald J. Sirbuly, Michael D. Mason, Paul J. Carson, Steven K. Buratto:
Investigation of polarization anisotropy in individual porous silicon nanoparticles. 1144-1148 - Na Gong, Baozeng Guo, Jianzhong Lou, Jinhui Wang:
Analysis and optimization of leakage current characteristics in sub-65 nm dual Vt footed domino circuits. 1149-1155 - Fei Yuan, Tao Wang:
CMOS current-mode integrating receivers for Gbytes/s parallel links. 1156-1165
Volume 39, Number 10, October 2008
- S. Mimouni, Abdelkader Saïdane, A. Feradji:
Transmission-line-matrix (TLM) modeling of self-heating in AlGaN/GaN transistor structures. 1167-1172 - Ali Cheknane, Hikmat S. Hilal, Fayçal Djeffal, Boumediène Benyoucef, Jean-Pierre Charles:
An equivalent circuit approach to organic solar cell modelling. 1173-1180 - Manju K. Chattopadhyay, Sanjiv Tokekar:
Thermal model for dc characteristics of algan/gan hemts including self-heating effect and non-linear polarization. 1181-1188 - Xiangbin Zeng, Huijuan Wang, Xiaowei Sun, Junfeng Li:
Electric field-enhanced metal-induced lateral crystallization and P-channel poly-Si TFTs fabricated by it. 1189-1194 - Dongwoo Han, Sunghyun Kim, Sekwang Park:
Two-dimensional ultrasonic anemometer using the directivity angle of an ultrasonic sensor. 1195-1199 - Tohru Suwa, Hamid Hadim:
Multidisciplinary heat generating logic block placement optimization using genetic algorithm. 1200-1208 - Hervé F. Achigui, Mohamad Sawan, Christian Jesús B. Fayomi:
A monolithic based NIRS front-end wireless sensor. 1209-1217
Volume 39, Number 11, November 2008
- Angela S. Camacho Beltran, Anderson Dussan Cuenca, Mohamed Henini:
Preface. 1219 - H. Carrillo-Nuñez, Peter A. Schulz:
Scrutinizing localization properties in heuristic models for DNA molecules: Localization lengths versus participation ratios. 1220-1221 - Carlos J. Paez, Peter A. Schulz:
Delocalization of vibrational normal modes in double chains: Application to DNA systems. 1222-1223 - Frank Rodolfo Fonseca-Fonseca, A. Franco:
Study of complex charge distributions in an electrolyte using the Poisson-Boltzmann equation by lattice-Boltzmann method. 1224-1225 - B. Lassen, Daniele Barettin, Morten Willatzen, L. C. Lew Yan Voon:
Piezoelectric models for semiconductor quantum dots. 1226-1228 - Carolina Parra, Patricio Häberle, Maximiliano D. Martins, Waldemar A. A. Macedo:
Growth and morphology of ultra-thin Ni films on Pd(1 0 0). 1229-1230 - Shirley Gómez, William J. Herrera, Jesús V. Niño, Diego A. Manjarrés:
Crossed Andreev reflection in superconducting junctions. 1231-1232 - Luis Rosales, Monica Pacheco, Z. Barticevic, Pedro A. Orellana:
Conductance of Armchair GNRs with side-attached organic molecules. 1233-1235 - J. E. Rodríguez, Doris Cadavid, L. C. Moreno:
Thermoelectric figure of merit of LSCoO-Mn perovskites. 1236-1238 - A. León, Z. Barticevic, Monica Pacheco:
Electronic properties of nanoribbon junctions. 1239-1241 - Monica Gómez, Andrés Rosales-Rivera, Posidia Pineda-Gómez, Diego Muraca, Hugo Sirkin:
Thermal, structural and magnetic characterization of Co-based alloys. 1242-1244 - Javier A. Olarte, L. C. Moreno, Alvaro Mariño:
Susceptibility and EPR studies of LaMnx-1CoxO3 synthesized by citrate precursor method. 1245-1247 - Alvaro Pulzara-Mora, Esteban Cruz-Hernández, Juan-Salvador Rojas-Ramírez, Víctor-Hugo Méndez-García, Máximo López-López:
Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy. 1248-1250 - J. F. Nossa, Angela S. Camacho:
Optical properties of supercrystals. 1251-1253 - J. D. Correa, Z. Barticevic, Monica Pacheco:
Magneto-absorption of donor impurities in quantum-well wires. 1254-1256 - Andreas Tortschanoff, E. Portuondo Campa, Frank van Mourik, Majed Chergui:
Optical Kerr effect studies of the dynamics of confined water. 1257-1258 - J. Fernández P, Ligia Jaimes Osorio, C. Lorena Beltrán:
Energy levels of on-axis donors in vertically stacked quantum dots with different morphologies. 1259-1260 - P. Aristizábal, R. L. Restrepo, W. Ospina, Carlos Alberto Duque:
Hydrostatic pressure effects on the binding and transition energies for Wannier excitons in GaAs/Ga1-xAlxAs quantum wells. 1261-1263 - M. Zuluaga, A. Pardo, Jaime Torres, José Edgar Alfonso:
Influence of the laser power on the optical properties of MoO3 thin films prepared by CO2 laser evaporation. 1264-1265 - Emmanuel Vallejo:
Lattice distortion in the one-dimensional double and super-exchange model. 1266-1267 - G. B. Orozco, J. C. Granada:
Localized modes in superconductor-dielectric photonic crystals with broken translational symmetry. 1268-1269 - Paula Garcés, Alvaro Mariño, Pedro Hernan Sánchez:
YBCO superconducting tapes by melt-annealing method on metallic Ni%5W substrates. 1270-1271 - F. E. López, E. Reyes-Gómez, L. E. Oliveira:
Electron Landé g || factor in semiconductor quantum wires. 1272-1273 - Oscar Checa, E. Olaya, Jesus Evelio Diosa, Ruben Antonio Vargas:
Effect of nanoparticles of Fe2O3 on the phase behavior of CsHSeO4. 1274-1275 - Manuel Camargo, Rafael M. Gutiérrez:
Quasi-analytical study of the energy levels in double quantum wells. 1276-1278 - Carlos Arnulfo Gómez, Luis Francisco García, William Gutiérrez, Jairo Humberto Marín:
Ion-molecular D2+ complex in a quantum ring. 1279-1280 - S. Calderón V, L. Escobar-Alarcón, Enrique Camps, S. Muhl, M. Rivera, I. Bentacourt, J. Olaya, Alvaro Mariño:
Structural, magnetic and magneto-electric properties of La1-xSrxMnO3 thin films prepared by pulsed laser deposition. 1281-1283 - J. Hernández-Rosas, Julio G. Mendoza-Álvarez, Salvador Gallardo-Hernández, Esteban Cruz-Hernández, Juan-Salvador Rojas-Ramírez, Máximo López-López:
Optical characterization of InAs delta-layers grown by MBE at different substrate temperatures. 1284-1285 - Jesús D. González Acosta, Eduardo Orozco Ospino, Jose Barba Ortega:
Effect of potential shape on the binding energy of the impurity states in nanotube. 1286-1288 - Karen Hallberg, M. Nizama, J. d'Albuquerque e Castro:
Impurities in elliptical quantum corrals. 1289-1291 - A. Dussan, R. H. Buitrago, R. R. Koropecki:
Microcrystalline silicon thin films: A review of physical properties. 1292-1295 - H. Castro, G. Leibovitch, R. Beck, A. Kohen, Yoram Dagan, G. Deutscher:
Tunneling spectroscopy: A probe for high-Tc superconductivity. 1296-1299 - L. D. López-Carreño:
Effect of fluctuations in reactant pressures on the bistability of CO oxidation on Pt surfaces. 1300-1301 - L. D. López-Carreño, O. L. Cortes-Bracho:
Hausdorff dimension of adsorbate structures in CO oxidation on reduced size Pt-crystals. 1302-1303 - María L. Ladrón de Guevara, G. A. Lara, Pedro C. Orellana:
Electronic transport through two double quantum dot molecules embedded in an Aharonov-Bohm ring. 1304-1305 - Margarita E. López, Pedro Hernan Sánchez:
Characterization of piezoelectric materials as a power source for electronic implantation devices. 1306-1307 - Miguel Grizalez, E. Martinez, Julio Caicedo, Jesús Heiras, Pedro Prieto:
Occurrence of ferroelectricity in epitaxial BiMnO3 thin films. 1308-1310 - Ruby Rocio Rodríguez, German Antonio Pérez Alcázar, Hector Sánchez, Jean-Marc Greneche:
Milling time effects on the magnetic and structural properties of the Fe70Si30 system. 1311-1313 - C. E. Jácome, J. C. Giraldo:
Thermoelectric power of SnO2 anisotropic thin films. 1314-1315 - C. E. Jácome, J. C. Giraldo:
Properties of ZnO thin films through percolation model. 1316-1317 - L. Alvarez Miño:
Study of the fluctuation conductivity in YBCO thin film with low transition temperatures. 1318-1319 - L. C. Sánchez, A. M. Calle, J. D. Arboleda, Jaime Osorio, Kiyoshi Nomura, César Augusto Barrero:
Fe-doped SnO2 obtained by mechanical alloying. 1320-1321 - A. M. Calle, L. C. Sánchez, J. D. Arboleda, J. J. Beltrán, César Augusto Barrero, Jaime Osorio, Kiyoshi Nomura:
Mixtures of iron and anatase TiO2 by mechanical alloying. 1322-1323 - Clara Lilia Calderón, Pascual Bartolo-Pérez, Oscar Rodríguez, Gerardo Gordillo:
Phase identification and XPS studies of Cu(In, Ga)Se2 thin films. 1324-1326 - José Edgar Alfonso, Jaime Buitrago, Jaime Torres, Benito Santos, J. F. Marco:
Crystallographic structure and surface composition of NbNx thin films grown by RF magnetron sputtering. 1327-1328 - Carlos M. Garzón, José Edgar Alfonso, Edna C. Corredor, Abel A. Recco, André P. Tschiptschin:
Hardness and structure characterization of Ti6Al4V films produced by reactive magnetron sputtering on a conventional austenitic stainless steel. 1329-1330 - Fernando Gordillo Delgado, Fabián Zárate-Rincón, J. Aicardo Ortega Vela:
Coffee certification criterion using the photoacoustic technique. 1331-1332 - Fernando Gordillo Delgado, Katherine Villa Gómez, Claudia Mejía Morales:
Titanium dioxide nanocrystalline bactericidal thin films grown by sol-gel technique. 1333-1335 - S. Amaya-Roncancio, Elisabeth Restrepo-Parra:
Finite elements modeling of multilayers of Cr/CrN. 1336-1338 - S. T. Pérez-Merchancano, Harold Paredes Gutiérrez, G. E. Marques:
Spin transport properties in double-barrier systems with diluted magnetic semiconductor doped layers. 1339-1340 - Juan M. Florez, P. Vargas:
Path integral study of phase transitions for thermons in macroscopic quantum tunneling. 1341-1343 - Maria Elena Fernández, Jesus Evelio Diosa, Ruben Antonio Vargas:
Impedance spectroscopy studies of the polymer electrolyte based on poly(vinyl alcohol)-(NaI+4AgI)-H2O. 1344-1346 - Carlos Vargas-Hernández, F. N. Jiménez-García, Jesús Fabian Jurado, V. Henao Granada:
XRD, µ-Raman and optical absorption investigations of ZnO deposited by SILAR method. 1347-1348 - Carlos Vargas-Hernández, F. N. Jiménez-García, Jesús Fabian Jurado, V. Henao Granada:
Comparison of ZnO thin films deposited by three different SILAR processes. 1349-1350 - Gerardo Gordillo, Mónica Botero, J. S. Oyola:
Synthesis and study of optical and structural properties of thin films based on new photovoltaic materials. 1351-1353 - H. M. Martinez, N. E. Rincon, J. Torres, José Edgar Alfonso:
Porous silicon thin film as CO sensor. 1354-1355 - H. Y. Valencia, L. C. Moreno, A. M. Ardila:
Structural, electrical and optical analysis of ITO thin films prepared by sol-gel. 1356-1357 - C. Celedón, N. R. Arista, Jorge Eduardo Valdes Leyton, P. Vargas:
Threshold effect in the energy loss of hydrogen and helium ions transmitted in channeling conditions in gold single crystal. 1358-1359 - Juan P. Restrepo, Herbert Vinck-Posada, Boris A. Rodríguez:
Wigner function and decoherence in a microcavity-Qdot system. 1360-1362 - L. M. Franco, J. A. Pérez, Henry Riascos:
Chemical analysis of CNx thin films produced by pulsed laser ablation. 1363-1365 - Jorge Ricardo Mejía-Salazar, N. Porras-Montenegro:
Landé g-factor and cyclotron effective mass in a cylindrical GaAs-(Ga, Al)As quantum pillbox under the influence of an axis-parallel applied magnetic field. 1366-1367 - A. Ramírez-Porras:
Flicker noise analysis of laminar voltage signals of porous silicon films. 1368-1370 - L. O. Prieto-López, Francisco Yubero, R. Machorro, Wencel De La Cruz:
Optical properties of Zr and ZrO2 films deposited by laser ablation. 1371-1373 - Wencel De La Cruz, C. Gallardo-Vega, Sven Tougaard, L. Cota:
Growth mechanism of iron nanoparticles on (0 0 0 1) sapphire wafers. 1374-1375 - J. A. Méndez-Bermúdez, Felix M. Izrailev:
Transverse localization in quasi-1D corrugated waveguides. 1376-1378 - O. A. Trujillo, Harvi Alirio Castillo, L. C. Agudelo, Alfonso Devia:
Chemical and morphological properties of (Ti-Zr)N thin films grown in an arc pulsed system. 1379-1381 - Harvi Alirio Castillo, Alfonso Devia, Gerardo Soto, Jesús A. Díaz, Wencel De La Cruz:
Electron inelastic mean free path for B4C and BC2N determined by reflection electron energy loss spectroscopy. 1382-1384 - Juan Galvis, H. Castro, Eliyahu Farber:
Anomalous transport properties in superconducting overdoped YBCO thin films. 1385-1387 - German A. Luna-Acosta, Juan José Reyes Salgado, J. A. Méndez-Bermúdez:
Ondulating 2D waveguides. Dynamical and transport properties. 1388-1390 - J. D. Uribe, Jaime Osorio, César Augusto Barrero, D. Giratá, A. L. Morales, Axel Hoffmann:
Physical properties in thin films of iron oxides. 1391-1393
Volume 39, Number 12, December 2008
- Mohamed H. Zaki, Sofiène Tahar, Guy Bois:
Formal verification of analog and mixed signal designs: A survey. 1395-1404
- Gwiy-Sang Chung, Kang-San Kim:
Raman scattering of polycrystalline 3C-SiC film deposited on AlN buffer layer by using CVD with HMDS. 1405-1407 - Gwiy-Sang Chung, Kyu-Hyung Yoon:
Ohmic contacts to single-crystalline 3C-SiC films for extreme-environment MEMS applications. 1408-1412 - Gwiy-Sang Chung, Ki-Bong Han:
H2 carrier gas dependence of Young's modulus and hardness of chemical vapor deposited polycrystalline 3C-SiC thin films. 1413-1415 - Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta:
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency. 1416-1424 - M. Sahal, B. Hartiti, A. Ridah, Miguel Mollar, Bernabé Marí:
Structural, electrical and optical properties of ZnO thin films deposited by sol-gel method. 1425-1428 - Doron Abraham, Zeev Zalevsky, Avraham Chelly, Jossef Shappir, Michael Rosenbluh:
Silicon on insulator photo-activated modulator. 1429-1432 - Monem Krichen, Abdelaziz Zouari, Adel Ben Arab:
Effect of the interface states on the cell parameters of a thin film quasi-monocrystalline porous silicon as an active layer. 1433-1438 - R. Srnánek, G. Irmer, D. Donoval, J. Osvald, D. Mc Phail, A. Christoffi, B. Sciana, D. Radziewicz, M. Tlaczala:
Application of micro-Raman spectroscopy for the evaluation of doping profile in Zn delta-doped GaAs structures. 1439-1443 - T. S. Sathiaraj:
Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level. 1444-1451 - Zhixiang Cai, Xiangyou Li, Qianwu Hu, Xiaoyan Zeng:
Study on thick-film PTC thermistor fabricated by micro-pen direct writing. 1452-1456 - H. Touati, Mnawer Souissi, Zied Chine, Belgacem El Jani:
Near-infrared photoluminescence of V-doped GaN. 1457-1460 - Aranggan Venkataratnam, Ashok K. Goel:
Design and simulation of logic circuits with hybrid architectures of single-electron transistors and conventional MOS devices at room temperature. 1461-1468 - C. S. Yang:
Quantum states of a hydrogenic donor impurity in a cubic quantum dot by the finite difference method. 1469-1471 - S. V. Jadhavand, Vijaya Puri:
Microwave absorption and permittivity of polyaniline thin films using overlay technique. 1472-1475 - Fatemeh Kashfi, Sied Mehdi Fakhraie, Saeed Safari:
Designing an ultra-high-speed multiply-accumulate structure. 1476-1484 - Gian-Franco Dalla Betta, S. Ronchin, A. Zoboli, Nicola Zorzi:
High-performance PIN photodiodes on TMAH thinned silicon wafers. 1485-1490 - Valeria Garofalo:
Fixed-width multipliers for the implementation of efficient digital FIR filters. 1491-1498 - Masoud Darvish Ganji, H. Aghaei, M. R. Gholami:
Design of nanoswitch based on C20-bowl molecules: A first principles study. 1499-1503 - Buket D. Barkana:
Characteristics of AlGaAs/GaAs heterostructure RT-SCR model. 1504-1508 - Zine Abid, Hayssam El-Razouk, Dalia A. El-Dib:
Low power multipliers based on new hybrid full adders. 1509-1515 - S. T. Ahmad, David G. Hasko:
Broadband microwave spectroscopy of a GaAs point contact. 1516-1520 - Mnawer Souissi, H. Touati, Afif Fouzri, A. Bchetnia, Belgacem El Jani:
Effect of carrier gas on the surface morphology of V-doped GaN layers. 1521-1524 - Chunlin Zhang, Su Liu, Fangcong Wang, Yong Zhang:
Improved property in organic light-emitting diode utilizing two Al/Alq3 layers. 1525-1527 - Mohammad Shavezipur, K. Ponnambalam, S. M. Hashemi, Amir Khajepour:
A probabilistic design optimization for MEMS tunable capacitors. 1528-1533 - Siroos Toofan, Abdolreza Rahmati, Adib Abrishamifar, G. Roientan Lahiji:
Low power and high gain current reuse LNA with modified input matching and inter-stage inductors. 1534-1537 - Ismail Saad, Razali Ismail:
Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method. 1538-1541 - Junpeng Cui, Yao Duan, Xiaofeng Wang, Yiping Zeng:
Strain status in ZnO film on sapphire substrate with a GaN buffer layer grown by metal-source vapor phase epitaxy. 1542-1544 - M. Hemmous, Abdelhamid Layadi, A. Guittoum, A. Bourzami, Abderrahim Benabbas:
Effect of deposition rate and thickness on the structural and electrical properties of evaporated Ni/glass and Ni/Si(1 0 0) thin films. 1545-1549 - Georgy L. Pakhomov:
Magnetron sputtered vs. thermally evaporated gold contacts in phthalocyanine-based thin film devices. 1550-1552 - Jin Seok Yang, Seong-Il Kim, Yong Tae Kim, Woon Jo Cho, Jung Ho Park:
Electrical characteristics of nano-crystal Si particles for nano-floating gate memory. 1553-1555 - Tongbo Wei, Rui-Fei Duan, Jun-Xi Wang, Jin-Min Li, Zi-Qiang Huo, Yi-Ping Zeng:
Hillocks and hexagonal pits in a thick film grown by HVPE. 1556-1559 - Gwiy-Sang Chung, Chael-Han Kim:
RTD characteristics for micro-thermal sensors. 1560-1563 - Jumril Yunas, Burhanuddin Yeop Majlis:
Comparative study of stack interwinding micro-transformers on silicon monolithic. 1564-1567 - Fen Qiao, Aimin Liu, Yi Xiao, Yang Ping Ou, Ji quan Zhang, Yong chang Sang:
Enhanced photovoltaic characteristics of solar cells based on n-type triphenodioxazine derivative. 1568-1571 - Shang-Chou Chang, Tien-Chai Lin, To-Sing Li, Sheng-Han Huang:
Carbon nanotubes grown from nickel catalyst pretreated with H2/N2 plasma. 1572-1575 - Jian-Duo Lu, Yang-Lai Hou, Zu-Zhao Xiong, Ting-Ping Hou, Ran Wei:
The conductance and magnetoresistance effect in a periodically magnetically modulated nanostructure. 1576-1579 - Lei Zhang, Bifeng Cui, Weiling Guo, Zhiqun Wang, Guangdi Shen:
High-power transverse micro-stack weakly coupled laser diode bars. 1580-1582 - Zengliang Shi, Dali Liu, Xiaolong Yan, Zhongmin Gao, Shiying Bai:
Effect of oxygen partial pressure on conductivity type of MgZnO nanocrystalline thin films prepared by metal-organic chemical vapor deposition. 1583-1586 - M. M. Habchi, Ahmed Rebey, B. El Jani:
AP-MOVPE of InGaAs on GaAs (0 0 1): Analysis of in situ reflectivity response. 1587-1593 - Fortunato Pezzimenti, Francesco Giuseppe Della Corte, Roberta Nipoti:
Experimental characterization and numerical analysis of the 4H-SiC p-i-n diodes static and transient behaviour. 1594-1599 - Te-Hua Fang, Tong Hong Wang, Deng-Maw Lu, Wen-Chieh Lien:
Structural characteristics of carbon nanostructures synthesized by ECR-CVD. 1600-1604 - R. Srnánek, G. Irmer, D. Donoval, A. Vincze, B. Sciana, D. Radziewicz, M. Tlaczala:
Quantitative analysis of doping profile on beveled p-type GaAs structures by micro-Raman spectroscopy. 1605-1612 - Thomas Tsiolakis, Nikos Konofaos, G. Ph. Alexiou:
Design, simulation and performance evaluation of a single-electron 2-4 decoder. 1613-1621 - Mingjun Liu, Ping Chen, Qin Xue, Fangfang Jiang, Guohua Xie, Jingying Hou, Yi Zhao, Liying Zhang, Bin Li:
Influence of connecting units' thicknesses on tandem organic devices' performances. 1622-1625 - Jozef Kákos, Milan Mikula, Ladislav Harmatha:
Ultrathin insulating silica layers prepared from adsorbed TEOS, H2O and NH3 as a catalyst. 1626-1628 - Huizhao Zhuang, Baoli Li, Chengshan Xue, Xiao-kai Zhang, Shi-Ying Zhang, Dexiao Wang, Jiabing Shen:
Growth of Nb-catalysed GaN nanowires. 1629-1633 - Rajesh K. Tyagi, Anil Ahlawat, Manoj Pandey, Sujata Pandey:
A new two-dimensional C-V model for prediction of maximum frequency of oscillation (fmax) of deep submicron AlGaN/GaN HEMT for microwave and millimeter wave applications. 1634-1641 - Jesús Arias Álvarez, Luis Quintanilla, Lourdes Enríquez, Jesús Manuel Hernández-Mangas, José Vicente, Jokin Segundo:
A 1-GHz, multibit, continuous-time, delta-sigma ADC for Gigabit Ethernet. 1642-1648 - Sh. M. Eladl:
Analysis of interface recombination and self-absorption effect on the performance of QWIP-HBT-LED integrated device. 1649-1653 - Zhihong Chen, Duanzheng Yao, Xi Zhang, Tianhong Fang:
Polaron effect-dependent third-order optical susceptibility in a ZnS/CdSe quantum dot quantum well. 1654-1658 - Antonella Arena, Nicola Donato, Gaetano Saitta, S. Galvagno, C. Milone, A. Pistone:
Photovoltaic properties of multi-walled carbon nanotubes deposited on n-doped silicon. 1659-1662 - Rodrigo Trevisoli Doria, Antonio Cerdeira, Jean-Pierre Raskin, Denis Flandre, Marcelo Antonio Pavanello:
Harmonic distortion analysis of double gate graded-channel MOSFETs operating in saturation. 1663-1670 - Nayan Patel, A. Ramesha, Santanu Mahapatra:
Drive current boosting of n-type tunnel FET with strained SiGe layer at source. 1671-1677 - Qi Wang, Xiaomin Ren, Feihua Wang, Jianyou Feng, Jihe Lv, Jing Zhou, Shiwei Cai, Hui Huang, Yongqing Huang:
LP-MOCVD growth of ternary BxGa1-xAs epilayers on (0 0 1)GaAs substrates using TEB, TMGa and AsH3. 1678-1682 - Liang Shen, Wenbin Guo, Zhicheng Zhong, Guohui Zhu, Chen Tao, Ziran Liu, Jingran Zhou, Weiyou Chen:
Water-soluble poly(3, 4-ethylenedioxythiophene)/nano-crystalline TiO2 heterojunction solar cells. 1683-1686 - Hwann-Kaeo Chiou, Hsien-Jui Chen, Hsien-Yuan Liao, Shuw-Guann Lin, Yin-Cheng Chang:
Design formula for band-switching capacitor array in wide tuning range low-phase-noise LC-VCO. 1687-1692 - Ashis Kumer Biswas, Md. Mahmudul Hasan, Ahsan Raja Chowdhury, Hafiz Md. Hasan Babu:
Efficient approaches for designing reversible Binary Coded Decimal adders. 1693-1703 - Jingbo Shao, Guangsheng Ma, Zhi Yang, Ruixue Zhang:
Test response reuse-based SoC core test compression and test scheduling for test application time minimization. 1704-1709 - Weijun Luo, Xiaoliang Wang, Lunchun Guo, Hongling Xiao, Cuimei Wang, Junxue Ran, Jianping Li, Jinmin Li:
Influence of AlN buffer layer thickness on the properties of GaN epilayer on Si(1 1 1) by MOCVD. 1710-1713 - Ranjith Kumar, Volkan Kursun:
Temperature-adaptive voltage tuning for enhanced energy efficiency in ultra-low-voltage circuits. 1714-1727 - Ali Alaeldine, Nicolas Lacrampe, Alexandre Boyer, Richard Perdriau, Fabrice Caignet, Mohammed Ramdani, Etienne Sicard, M'hamed Drissi:
Comparison among emission and susceptibility reduction techniques for electromagnetic interference in digital integrated circuits. 1728-1735 - Francesco Marraccini, Giuseppe de Vita, Stefano Di Pascoli, Giuseppe Iannaccone:
Low-voltage nanopower clock generator for RFID applications. 1736-1739 - Jani Miettinen, Ville Pekkanen, Kimmo Kaija, Pauliina Mansikkamäki, Juha Mäntysalo, Matti Mäntysalo, Juha Niittynen, Jussi Pekkanen, Taavi Saviauk, Risto Rönkkä:
Inkjet printed System-in-Package design and manufacturing. 1740-1750 - Soodeh Aghli Moghaddam, Nasser Masoumi:
Analysis and simulation of a novel gradually low-K dielectric structure for crosstalk reduction in VLSI. 1751-1760 - Bo Liu, Jing Lu, Yan Wang, Yang Tang:
An effective parameter extraction method based on memetic differential evolution algorithm. 1761-1769 - Ankit Kashyap, Rajeev K. Chauhan:
Effect of Ge profile design on the performance of an n-p-n SiGe HBT-based analog circuit. 1770-1773 - Paolo Stefano Crovetti, Franco L. Fiori:
Efficient BEM-based substrate network extraction in silicon SoCs. 1774-1784 - Hui Zhang, Yang Zhao, Alex Doboli:
A scalable sigma-space based methodology for modeling process parameter variations in analog circuits. 1785-1796 - Maziar Goudarzi, Tohru Ishihara, Hiroto Yasuura:
A software technique to improve lifetime of caches containing ultra-leaky SRAM cells caused by within-die Vth variation. 1797-1808 - Hussam Al-Hertani, Dhamin Al-Khalili, Côme Rozon:
UDSM subthreshold leakage model for NMOS transistor stacks. 1809-1816 - Stéphane Badel, Alexandre Schmid, Yusuf Leblebici:
CMOS realization of two-dimensional mixed analog-digital Hamming distance discriminator circuits for real-time imaging applications. 1817-1828 - Wei He, Zheng-xuan Zhang, En-xia Zhang, Wenjie Yu, Hao Tian, Xi Wang:
Practical considerations in the design of SRAM cells on SOI. 1829-1833 - Brajesh Kumar Kaushik, Sankar Sarkar:
Crosstalk analysis for a CMOS gate driven inductively and capacitively coupled interconnects. 1834-1842 - Mohsen Jalali, Abdolreza Nabavi, Mohammad Kazem Moravvej-Farshi, Ali Fotowat-Ahmady:
Low-noise differential transimpedance amplifier structure based on capacitor cross-coupled gm-boosting scheme. 1843-1851 - Valeria Boscaino, Patrizia Livreri, Filippo Marino, M. Minieri:
Current-sensing technique for current-mode controlled voltage regulator modules. 1852-1859 - Nam-Jin Oh:
A low-noise mixer with an image-reject notch filter for 2.4 GHz applications. 1860-1866 - Luis Henrique de Carvalho Ferreira, Tales Cleber Pimenta, Robson L. Moreno:
A CMOS threshold voltage reference source for very-low-voltage applications. 1867-1873 - Guoyi Yu, Xuecheng Zou:
A novel current reference based on subthreshold MOSFETs with high PSRR. 1874-1879 - Taikyeong T. Jeong:
Implementation of low power adder design and analysis based on power reduction technique. 1880-1886
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