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ORCIDJixuan Wu
Publications
- 2025
[j9]Guangkuo Yang
, Meng Zhang, Peng Guo, Xuepeng Zhan, Shaoqi Yang, Xiaohuan Zhao, Xinyi Guo, Pengpeng Sang, Jixuan Wu, Fei Wu, Jiezhi Chen:
High-Precision Error Bit Prediction for 3D QLC NAND Flash Memory: Observations, Analysis, and Modeling. IEEE Trans. Computers 74(4): 1392-1404 (2025)- [j8]Shaoqi Yang, Meng Zhang, Xuepeng Zhan, Peng Guo, Xiaohuan Zhao, Guangkuo Yang, Xinyi Guo, Jixuan Wu, Fei Wu, Jiezhi Chen:
Retention Accelerated Testing for 3-D QLC nand Flash Memory: Characterization, Analysis, and Modeling. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 44(7): 2779-2788 (2025) - [j7]Yang Feng, Zhaohui Sun, Chengcheng Wang, Xinyi Guo, Junyao Mei, Yueran Qi, Jing Liu, Junyu Zhang, Jixuan Wu, Xuepeng Zhan, Peng Huang, Jiezhi Chen:
An Efficient Flash-Based Computing-in-Memory (CIM) Demonstration of High-Precision (32-bit) Nonlinear Partial Differential Equation (PDE) Solver With Ultra-High Endurance and Reliability. IEEE Trans. Circuits Syst. I Regul. Pap. 72(7): 3247-3257 (2025) - 2024
- [j6]Maoying Bai, Shuhao Wu, Hai Wang, Hua Wang, Yang Feng, Yueran Qi, Chengcheng Wang, Zheng Chai, Tai Min, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
A 3D MCAM architecture based on flash memory enabling binary neural network computing for edge AI. Sci. China Inf. Sci. 67(12) (2024) - [c13]Yang Feng, Dong Zhang, Chen Sun, Zijie Zheng, Yue Chen, Qiwen Kong, Gan Liu, Yuye Kang, Kaizhen Han, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
First Demonstration of BEOL-Compatible 3D Vertical FeNOR. VLSI Technology and Circuits 2024: 1-2 - [c12]Dong Zhang, Yang Feng, Zijie Zheng, Chen Sun, Qiwen Kong, Gan Liu, Zuopu Zhou, Gengchiau Liang, Kai Ni, Jixuan Wu, Jiezhi Chen, Xiao Gong:
Unveiling Cryogenic Performance (4 to 300 K) Towards Ultra-Thin Ferroelectric HZO: Novel Kinetic Barrier Engineering and Underlying Mechanism. VLSI Technology and Circuits 2024: 1-2 - [i1]Yang Feng, Zhaohui Sun, Chengcheng Wang, Xinyi Guo, Junyao Mei, Yueran Qi, Jing Liu, Junyu Zhang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Operation Scheme Optimizations to Achieve Ultra-high Endurance (1010) in Flash Memory with Robust Reliabilities. CoRR abs/2401.08120 (2024) - 2023
- [j5]Yang Feng, Bing Chen, Mingfeng Tang, Yuerang Qi, Maoying Bai, Chengcheng Wang, Hai Wang, Xuepeng Zhan, Junyu Zhang, Jing Liu, Jixuan Wu, Jiezhi Chen:
Near-threshold-voltage operation in flash-based high-precision computing-in-memory to implement Poisson image editing. Sci. China Inf. Sci. 66(12) (2023) - [j3]Shuhao Wu, Bo Chen, Chengcheng Wang, Junyao Mei, Maoying Bai, Xuepeng Zhan, Jixuan Wu, Junshuai Chai, Hao Xu, Xiaolei Wang, Jiezhi Chen:
Dual-pulse disturb-free programming scheme for FeFET based neuromorphic computing. Microelectron. J. 137: 105818 (2023) - [j1]Xiaotong Fang, Meng Zhang, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu, Jiezhi Chen:
High-Precision Short-Term Lifetime Prediction in TLC 3-D NAND Flash Memory as Hot-Data Storage. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(10): 3224-3235 (2023) - [c11]Yang Feng, Yueran Qi, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
Flash-based Computing-in-memory Architectures with High-accuracy and Robust Reliabilities for General-purpose Applications. ASICON 2023: 1-4 - [c10]Shaoqi Yang, Xiaohuan Zhao, Kenie Xie, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
One-shot Read Processing to Enhance Cold Data Retention in Charge-trap TLC 3D NAND Flash. ASICON 2023: 1-4 - [c8]Zhichao Du, Chuanxue Sun, Xiaoyu Dou, Pengpeng Sang, Xuepeng Zhan, Chengji Jin, Jixuan Wu, Jiezhi Chen:
Simulation for the Feasibility of IGZO Channel in 3D Vertical FeFET Memory Based on TCAD. ICTA 2023: 51-52 - [c7]Junyao Mei, Bo Chen, Pengpeng Sang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Opto-Electronic Monolayer ZnO Memristor Produced via Low Temperature Atomic Layer Deposition. ICTA 2023: 53-54 - [c6]Xiaohuan Zhao, Shaoqi Yang, Kenie Xie, Yang Feng, Qianwen Wang, Pengpeng Sang, Xuepeng Zhan, Jixuan Wu, Jiezhi Chen:
Error Bits Recovering in 3D NAND Flash Memory: A Novel State-Shift Re-Program (SRP) Scheme. ICTA 2023: 99-100 - [c5]Dong Zhang, Jixuan Wu, Qiwen Kong, Zuopu Zhou, Long Liu, Kaizhen Han, Chen Sun, Xiaolin Wang, Gan Liu, Leming Jiao, Zijie Zheng, Yuye Kang, Jiezhi Chen, Xiao Gong:
Grain Size Reduction of Ferroelectric HZO Enabled by a Novel Solid Phase Epitaxy (SPE) Approach: Working Principle, Experimental Demonstration, and Theoretical Understanding. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c4]Xiaotong Fang, Meng Zhang, Yifan Guo, Fei Chen, Binglu Chen, Xuepeng Zhan, Jixuan Wu, Fei Wu, Jiezhi Chen:
Work-in-Progress: High-Precision Short-Term Lifetime Prediction in TLC 3D NAND Flash Memory as Hot-data Storage. CASES 2022: 11-12 - [c3]Kenie Xie, Pena Guo, Fei Chen, Binglu Chen, Xiaotong Fang, Jixuan Wu, Xuepeng Zhan, Jiezhi Chen:
Large Suppression to Lateral Charge Migration (LCM) Related Error Bits in Charge-Trap TLC 3D NAND Flash. ICTA 2022: 24-25 - 2019
- [c1]Rui Cao, Jixuan Wu, Wenjing Yang, Jiezhi Chen, Xiangwei Jiang:
Program/Erase Cycling Enhanced Lateral Charge Diffusion in Triple-Level Cell Charge-Trapping 3D NAND Flash Memory. IRPS 2019: 1-4
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last updated on 2025-10-09 22:52 CEST by the dblp team
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