"Inserting a low-temperature n-GaN underlying layer to separate ..."

Ray-Ming Lin et al. (2010)

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DOI: 10.1016/J.MICROREL.2010.01.017

access: closed

type: Journal Article

metadata version: 2020-02-22

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Ray-Ming Lin, Yung-Hsiang Lin, Chung-Hao Chiang, Mu-Jen Lai, Yi-Lun Chou, Yuan-Chieh Lu, Shou-Yi Kuo, Bor-Ren Fang, Meng-Chyi Wu:
Inserting a low-temperature n-GaN underlying layer to separate nonradiative recombination centers improves the luminescence efficiency of blue InGaN/GaN LEDs. Microelectron. Reliab. 50(5): 679-682 (2010)

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