About: Plasma-activated bonding

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Plasma-activated bonding is a derivative, directed to lower processing temperatures for direct bonding with hydrophilic surfaces. The main requirements for lowering temperatures of direct bonding are the use of materials melting at low temperatures and with different coefficients of thermal expansion (CTE). Surface activation prior to bonding has the typical advantage that no intermediate layer is needed and sufficiently high bonding energy is achieved after annealing at temperatures below 400 °C.

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  • Plasma-activated bonding is a derivative, directed to lower processing temperatures for direct bonding with hydrophilic surfaces. The main requirements for lowering temperatures of direct bonding are the use of materials melting at low temperatures and with different coefficients of thermal expansion (CTE). Surface activation prior to bonding has the typical advantage that no intermediate layer is needed and sufficiently high bonding energy is achieved after annealing at temperatures below 400 °C. (en)
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  • Plasma-activated bonding is a derivative, directed to lower processing temperatures for direct bonding with hydrophilic surfaces. The main requirements for lowering temperatures of direct bonding are the use of materials melting at low temperatures and with different coefficients of thermal expansion (CTE). Surface activation prior to bonding has the typical advantage that no intermediate layer is needed and sufficiently high bonding energy is achieved after annealing at temperatures below 400 °C. (en)
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  • Plasma-activated bonding (en)
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