Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices

Chandreswar Mahata; Wonwoo Kim; Shiwhan Kim; Muhammad Ismail; Min-Hwi Kim; Sungjun Kim; Byung-Gook Park

doi:10.1587/elex.16.20190404

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Reversible nonvolatile and threshold switching characteristics in Cu/high-k/Si devices

Chandreswar Mahata, Wonwoo Kim, Shiwhan Kim, Muhammad Ismail, Min-Hwi Kim, Sungjun Kim, Byung-Gook Park

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Keywords: resistive switching, atomic layer deposition, CBRAM, copper, high-k dielectric

JOURNAL FREE ACCESS

2019 Volume 16 Issue 16 Pages 20190404

DOI https://doi.org/10.1587/elex.16.20190404

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Abstract

Here, the resistive switching properties of Cu/Al₂O₃/p-Si and Cu/HfO₂/p-Si devices are investigated in details. Both memory switching and threshold switching behaviors observed under different current compliance conditions. The transition between two switching modes is possible. Cu ion diffusion form conductive filaments inside the insulator and formation/dissociation mechanism induced the switching phenomenon. The device performances under both memory switching and threshold switching are possible for non-volatile storage memory and selector applications, respectively.

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