IPB072N15N3 G IPP075N15N3 G

IPI075N15N3 G

"%&$!"# 3 Power-Transistor
Product Summary
Features
V 9H )-( J
Q ' 3 81>>5< >? B=1<<5F5<
R  , ? >=1H-(     /&* Y"
Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 
I9 )(( 6
Q. 5BI <? G ? > B5C9CD
1>3 5 R 9H"[Z#

Q   T ? @5B1D9>7 D5=@5B1D
EB5

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Q * E1<96954 13 3 ? B49>7 D? $     6? BD1B75D1@@<9
3 1D9? >

Q#451<6? B8978 6B5AE5>3 I CG9D389

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96931D
9? >

Q" 1<? 75> 6B55 13 3 ? B49

>7 D? #       

Type #)     '  '  ! #) )    '  '  ! #) #   '  '  !

Package E=%ID*.+%+ E=%ID**(%+ ) ! -(    

Marking (/*C)-C (/-C)-C (/-C)-C

Maximum ratings, 1DT V   T  E><5CC ? D85BG9C5 C@53 9

6954

Parameter Symbol Conditions Value Unit

 ? >D
9>E? EC 4B
19> 3 EBB5>D I9 T 8   T )(( 6

T 8   T 1+

) E<C54 4B19> 3 EBB5>D*# I 9$\aX_Q T 8   T ,((

 F1<1>3 85 5>5B7I C9
>7<5 @E<C5 E 6H I 9     R =H   " /0( Y@

I 9     V 9H   . 
+ 5F5BC5 49
? 45 4v 'Pt Pv 'Pt Pi 'Pt     V C . WJ'r_
T V$YMd   T

!1D5 C? EB35 F? <D175 V =H q*( J

) ? G5B49CC9@1D9? > P `[` T 8   T +(( K

( @5B1D9>7 1>4 CD? B

175 D5=@5B1DEB5 T V T _`S  

  T

#  3 <9=1D
93 3 1D57? BI  #' #          
)#
$ , -   1>4 $  ,   
*#
, 55 697EB
5

+ 5F

  @175      
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G

Parameter Symbol Conditions Values Unit

min. typ. max.

Thermal characteristics

-85B=1<B5C9
CD1>3 5 :E>3 D9
? > 3 1C5 R `T@8 % % (&- A'K

-85B=1<B5C9
CD1>3 5 :E>3 D9
?> R `T@6 =9>9
=1<6? ? D@B9>D 
MYNUQZ`
 3 = 3 ? ? <9>7 1B51 +# % % ,(

Electrical characteristics, 1DT V   T  E><5CC ? D85BG9C5 C@53 96954

Static characteristics

 B19> C? EB35 2 B51;4? G> F? <D175 V "7G#9HH V =H  .  I 9 = )-( % % J

!1D5 D8B5C8? <4 F? <D175 V =H"`T# V 9H4V =H I 9    V  * + ,

V 9H   .  V =H  . 
05B? 71D5 F? <D175 4B
19> 3 EBB5>D I 9HH % (&) ) r6
T V   T

V 9H   .  V =H  . 
% )( )((
T V   T

!1D5 C? EB35 <51;175 3 EBB5>D I =HH V =H   .  V 9H  . % ) )(( Z6

V =H  .  I 9    
 B19> C? EB35 ? > CD1D5 B5C9CD1>3 5 R 9H"[Z# % .&* /&- Y"
-(     -(    

V =H  .  I 9    
% -&0 /&*
"ID*.+#

V =H  .  I 9    
% .&, /&/
-(     -(    

V =H  .  I 9    
% .&( /&,
"ID*.+#

!1D5 B5C9CD
1>3 5 R= % *&+ % "

gV 9Hg5*gI 9gR 9H"[Z#YMd

I^MZ_O[ZPaO`MZOQ g R_ .- )+( % H
I 9   

+#
 5F935 ? >   == H   == H
 == 5@? HI )   +  G9D8  3 =* ? >5 <1I5B
 V=D
893; 3 ? @@5B1B
51 6? B4B
19>
3 ? >>53 D
9? >
)   9C F5B
D931<9> CD
9<<19B

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic characteristics

#>@ED3 1@13 9D1>3 5 C U__ % -,/( % \<

V =H  .  V 9H   . 
( ED@ED3 1@13 9
D1>3 5 C [__ % .+0 %
f & " J
+ 5F5BC5 DB1>C65B3 1@13 9D1>3 5 C ^__ % )( %

-EB> ? > 45<1I D9=5 t P"[Z# % *- +0 Z_

+ 9C5 D9
=5 t^ V 99   .  V =H  .  % +- -*

-EB> ? 6645<1I D9=5 t P"[RR# I 9     R =

 " % ,. .1

1<<D9
=5 tR % ), *)

!1D5  81BS5  81B13 D5B9

CD93C,#

!1D5 D? C? EB35 3 81B75 Q S_ % +( ,( Z8

!1D5 D? 4B19> 3 81B75 Q SP % )) )/

V 99   .  I 9    
, G9D389
>7 3 81B75 Q _c % *- +-
V =H  D?  .
!1D5 3 81B75 D? D
1< QS % /( 1+

!1D5 @<1D51E F? <D

175 V \XM`QMa % -&- % J

( ED@ED3 81B75 Q [__ V 99   .  V =H  . % )/1 *+1 Z8

Reverse Diode

 9? 45 3 ? >D9>? EC 6? BG1B4 3 EBB

5>D IH % % )(( 6
T 8   T
 9? 45 @E<C5 3 EBB
5>D I H$\aX_Q % % ,((

V =H  .  I <    
 9? 45 6? BG1B4 F? <D175 V H9 % ) )&* J
T V   T

+ 5F5BC5 B53 ? F5BI D9

=5 t ^^ V G   .  I <4I H % ),. % Z_

Q ^^ Pi <'Pt     V C
+ 5F5BC5 B53 ? F5BI 3 81B
75 % ,/0 % Z8

,#
, 55 69
7EB5  6? B71D5 3 81B75 @1B1=5D
5B4569>9D9
?>

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
1 Power dissipation 2 Drain current
P `[`4R"T 8# I 94R"T 8 V =H"  .

320 120

280
100

240

80
200
P tot [W]

I D [A]
160 60

120
40

80

20
40

0 0
0 50 100 150 200 0 50 100 150 200
T C [C] T C [C]

3 Safe operating area 4 Max. transient thermal impedance

I 94R"V 9H T 8   T  D 4( Z `T@84R"t \#
@1B1=5D5B t \ @1B1=5D5B
 D 4t \'T

103 100

VC

 VC

 VC
102
=C (&-
Z thJC [K/W]

 =C
I D [A]

(&*
10
1
10-1

98 (&)

(&(-

100
(&(*

(&()

C9
>7<5 @E<C5

10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100

V DS [V] t p [s]

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
5 Typ. output characteristics 6 Typ. drain-source on resistance
I 94R"V 9H T V   T R 9H"[Z#4R"I 9 T V   T
@1B
1=5D5B V =H @1B1=5D5B
 V =H

350 15
 .
 .
 .

 .
300  .


 .
250
10

R DS(on) [m ]
 .
200
I D [A]

 .  .
150
 .
5
100 
 .

50  .


 .
0 0
0 1 2 3 4 5 0 50 100 150
V DS [V] I D [A]

7 Typ. transfer characteristics 8 Typ. forward transconductance

I 94R"V =H K
V 9Hg5*gI 9gR 9H"[Z#YMd g R_4R"I 9 T V   T
@1B
1=5D5B T V

200 160

140

150 120

100
g fs [S]
I D [A]

100 80

60

50 40

  T
  T
20

0 0
0 2 4 6 8 0 40 80 120 160
V GS [V] I D [A]

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
R 9H"[Z#4R"T V I 9     V =H  . V =H"`T#4R"T V V =H4V 9H
@1B1=5D5B
 I9

20 4

3.5

 V
15 3

 V
2.5
R DS(on) [m ]

V GS(th) [V]
10 2
10!

`e\ 1.5

5 1

0.5

0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [C] T j [C]

11 Typ. capacitances 12 Forward characteristics of reverse diode

C 4R"V 9H V =H  .  f  & " J I <4R"V H9#
@1B1=5D5B
 TV

104 103
8U__

103 102
  T
  T    
C [pF]

I F [A]

8[__

  T    

102 101
  T

8^__
10
1
100
0 20 40 60 80 100 0 0.5 1 1.5 2

V DS [V] V SD [V]

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G
13 Avalanche characteristics 14 Typ. gate charge

I 6H4R"t 6J R =H   " V =H4R"Q SM`Q I 9    @E<C54

@1B
1=5D5B T V"_`M^`# @1B1=5D5B
 V 99

1000 10

 .
8

 .
100   T

 .
6

V GS [V]
I AS [A]

  T

  T 4
10

1 0
1 10 100 1000 0 20 40 60 80
t AV [s] Q gate [nC]

15 Drain-source breakdown voltage 16 Gate charge waveforms

V 7G"9HH#4R"T V I 9 =

170
V =H

165 Qg

160
V BR(DSS) [V]

155

150
V S _"`T#

145

140 Q S "`T# Q _c Q g ate

Q S_ Q SP
135
-60 -20 20 60 100 140 180
T j [C]

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G

PG-TO220-3: Outline

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G

PG-TO263-3: Outline

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G

PG-TO262-3: Outline

+ 5F

  @175       
 IPB072N15N3 G IPP075N15N3 G
IPI075N15N3 G

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+ 5F

  @175