F60SA60DS
F60SA60DS Pb
Pb Free Plating Product
16.0 Ampere Insulated Stealth Dual Series Connection Fast Recovery Rectifiers
Features ITO-220AB Unit : inch (mm)
Latest FRED technology with soft recovery characteristics .406(10.3) .189(4.8)
.100(2.55)
.112(2.85)
.165(4.2)
.272(6.9)
.248(6.3)
.381(9.7)
Low forward voltage drop .134(3.4)
.118(3.0)
.130(3.3)
High current capability
.114(2.9)
Low reverse leakage current
.606(15.4)
.583(14.8)
High surge current capability
Application
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS .114(2.9)
.071(1.8) .098(2.5)
Car Audio Amplifiers and Sound Device Systems
.512(13.0)
.543(13.8)
.161(4.1)MAX
.055(1.4)
.055(1.4)
.032(.8)
.039(1.0)
MAX
Mechanical Data .035(0.9)
.011(0.3)
Case: Fully Isolated Molding TO-220FP .1 .1
Epoxy: UL 94V-0 rate flame retardant (2.55) (2.55)
Terminals: Solderable per MIL-STD-202
method 208 Case Case Case
Case
Polarity: As marked on diode body
Negative
Mounting position: Any Positive
Common Cathode Common Anode
Doubler
Tandem Polarity
Series
Tandem Polarity
Weight: 2.0 gram approximately Suffix "DN" Suffix "DP" Suffix "DD" Suffix "DS"
ABSOLUTE MAXIMUM RATINGS T C =25C unless otherwise specified
Symbol Parameter Test Conditions Values Unit
VR Maximum D.C. Reverse Voltage 600 V
V RRM Maximum Repetitive Reverse Voltage 600 V
T C =110C, Per Diode 8 A
I F(AV) Average Forward Current
T C =110C, Per Package 16 A
I F(RMS) RMS Forward Current T C =110C, Per Diode 12 A
I FSM Non-Repetitive Surge Forward Current T J =45C, t=10ms, 50Hz, Sine 100 A
PD Power Dissipation 50 W
TJ Junction Temperature -40 to +150 C
T STG Storage Temperature Range -40 to +150 C
Torque Module-to-Sink RecommendedM3 1.1 Nm
R JC Thermal Resistance Junction-to-Case 2.5 C /W
Weight 2.1 g
ELECTRICAL CHARACTERISTICS T C =25C unless otherwise specified
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V R =600V -- -- 15 A
I RM Reverse Leakage Current
V R =600V, T J =125C -- -- 250 A
I F =8A -- 1.8 2.4 V
VF Forward Voltage
I F =8A, T J =125C -- 1.4 -- V
t rr Reverse Recovery Time I F =1A, V R =30V, di F /dt=-200A/s -- 17 -- ns
t rr Reverse Recovery Time V R =300V, I F =8A -- 30 -- ns
I RRM Max. Reverse Recovery Current di F /dt=-200A/s, T J =25C -- 2.3 -- A
t rr Reverse Recovery Time V R =300V, I F =8A -- 60 -- ns
I RRM Max. Reverse Recovery Current di F /dt=-200A/s, T J =125C -- 4.8 -- A
Rev.07 Page 1/3
1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/
F60SA60DS
25 100
VR=300V
IF=16A TJ =125C
20 80
TJ =125C
15 60
trr (ns)
IF (A)
IF=8A
10 40
IF=4A
TJ =25C
5 20
0 0
0 0.5 1.0
1.5 2.0 2.5 3.0 0 200 400 600 800 1000
VFV diF/dtA/s
Fig1. Forward Voltage Drop vs Forward Current Fig2. Reverse Recovery Time vs diF/dt
25 500
VR=300V VR=300V
TJ =125C TJ =125C
20 400 IF=16A
IF=16A
IRRM (A)
15 300
Qrr (nc)
IF=8A
IF=4A
10 200
IF=8A
IF=4A
5 100
0 0
0 200400 600 800 1000 0 200
400 600 800 1000
diF/dtA/s diF/dtA/s
Fig3. Reverse Recovery Current vs diF/dt Fig4. Reverse Recovery Charge vs diF/dt
1.2 10
1
1
0.8 Duty
ZthJC (K/W)
0.5
0.2
-1 0.1
0.6 10
Kf
0.05
trr Single Pulse
IRRM
0.4
-2
10
Qrr
0.2
-3
0 10 -4 -3 -2 -1
0 75 25 100 125 150
50 10 10 10 10 1
TJ (C) Rectangular Pulse Duration (seconds)
Fig5. Dynamic Parameters vs Junction Temperature Fig6. Transient Thermal Impedance
Rev.07 Page 2/3
1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/
F60SA60DS
IF trr
0.25 IRRM
Qrr
IRRM
dIF/dt 0.9 IRRM
Fig7. Diode Reverse Recovery Test Circuit and Waveform
Rev.07 Page 3/3
1995 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com.tw/
