Republic of the Philippines

Batangas State University

College of Engineering, Architecture and Fine Arts
Mechanical Engineering Department

ECE 425 – Basic Electronics with Measurements

Laboratory Report No. 2
Diode Characteristics and Configurations
(Series and Parallel)

Submitted by:
Leynes, Rica Meracle V.
ME-4105

Submitted to:
Engr. Sarah B. Tolentino
Instructor

Septmber 24, 2018

Objective:
To calculate, compare, draw, and measure the characteristics of a silicon and a germanium diode.

Materials:
a.) DMM
b.) Resistors - (1) 1-kΩ, (1) 1- MΩ
c.) Diodes – (1) Silicon, (1) Germanium
d.) DC power supply

Theory of Operation
Digital multimeter can be used in determining the operating condition of a diode. They have a
scale donated by a diode symbol that will indicate the condition of the diode in the forward and reverse
bias regions. If connected to establish a forward-bias condition the meter will display the forward voltage
across the diode at a current level typically in the neighborhood of 2mA. If connected to establish a
reverse-bias condition an “OL” should appear on the display to support the open-circuit approximation
frequently applied to this region. If the meter does not have the diode-checking capability the condition of
the diode can also be checked by obtaining some measure of the resistance level in the forward and
reverse-bias region.
The current-volt characteristics of a silicon or germanium diode have the general shape shown in
Fig.1.1. Note the change in scale for both the vertical and horizontal axes. In the reversed-biased region
the reverse saturation currents and fairly constant from 0V to the Zener potential. In the forward-bias
region the current increases quite rapidly with increasing diode voltage. Note that the curve is rising
almost vertically at a forward-biased voltage of less than 1V. The forward-biased diode current will be
limited solely by the network in which the diode is connected or by the maximum current or power rating
of the diode.
The “firing potential” or threshold voltage is determined by extending a straight line (dashed lines
of Fig. 1.1) tangent to the curves until it hits the horizontal axis. The intersection with the V D axis will
determine the threshold voltage VT at which he current begins to rise rapidly.

The DC or Static resistance of a diode at any point on the characteristics is determined by the ratio of the
diode voltage at that point, divided by the diode current.
The AC resistance at a particular diode current or voltage can be determined using a tangent line.
The resulting voltage and current deviations can then be measured and the following equation applied.
 It can be shown through the application of differential calculus that the AC resistance of a diode
in the vertical-rise section of the characteristics is rD= ohms.
For levels of current at and below the knee of the curve the AC resistance of a silicon diode is
better approximated by rD= ohms.

Procedure:
A. Diode Test
Diode Testing Scale
The diode testing scale of a DMM can be used to determine the operating condition of a diode.
With one polarity, the DMM should provide the “firing potential” of the diode, while the reverse
connections should result in an “OL” response to support the open circuit approximation.
Using the connection in Fig. 1.2, the constant-current source of a about 2mA internal to the meter
will forward-bias the junction, and a voltage of about 0.7V (700mV) will be obtain for silicon and 0.3
(300mV) for germanium. If the leads are reverse, an OL indication will be obtain.

If a low reading (less than 1 V) is obtained in both directions, the junction is shorted internally. If an OL
indication is obtained in both directions, the junction is open.
Perform the tests of Table 1.1 for the silicon and germanium diodes

Resistance Scales
As indicated in the Theory of Operation section of this experiment, the condition of a diode can
also be checked using the resistance scales of a volt-ohm-meter (VOM) or digital meter. Using the
appropriate scales of the VOM or DMM, determine the resistance levels of the forward- and reverse-bias
regions of the Si and Ge diodes. Enter the results in Table 1.2
Although the firing potential is not revealed using the resistance scales, a “good’’ diode will result in
lower resistance level in the forward bias state and a much higher resistance level when reverse-biased.
Based on the results of Table 1.2, are in both diodes in good condition?
 B. Forward-bias Diode Characteristics
In this part of the experiment we will obtain sufficient data to plot the forward-bias characteristics
of the silicon and germanium diodes on Fig. 1.5.
a.) Construct the network of Fig.1.4 will the supply (E) set at 0V. Record the measured value of
the resistor.

b.) Increase the supply voltage until VR (not E) reads 0.1V. Then measure VD and insert its
voltage in Table 1.3. Calculate the value of the corresponding current ID using the equation shown in
Table 1.3.
c.) Replace the silicon diode by a germanium diode and complete Table 1.4.
e.) On fig.1.5, plot 𝐼𝐷 versus 𝑉𝐷 for silicon and germanium diodes.

C. Reverse Bias
a.) In fig 1.6 a reverse bias connection has been established. Since the reverse saturation current
will be relatively small, a large resistance of 1MΩ is required if the voltage R is to be of measurable
amplitude. Construct the circuit and record the measured value of R in the diagram.

𝑉𝑅
b.) Measure the voltage 𝑉𝑅 . Calculate the reverse saturation current from 𝐼𝑆 = use
(𝑅𝑚𝑒𝑎𝑠 II 𝑅𝑚 )

𝑅𝑚 = 10𝑀Ω.
c.) Repeat step b for the germanium diode.
d.) How do the resulting level of 𝐼𝑆 for silicon and germanium compare.
e.) Determine the DC resistance levels for silicon and germanium diodes using the equation
𝑉𝐷 𝑉𝐷 𝐸 − 𝑉𝑅
𝑅𝐷𝐶 = = =
𝐼𝐷 𝐼𝑆 𝐼𝑆
 D. DC Resistance

a.) Using the Si curve of figure 1.5 determine the diode voltage at diode current levels indicated
in Table 1.5. Then determine the DC Resistance at each current level. Show all calculation.

b.) Repeat step a for germanium diode and complete Table 1.6

c.) Does the resistance for Si and Ge change as the diode current increase and we move up the
vertical-rise section of the characterestics?

E. AC Resistance

∆𝐶
a.) Using equation 𝑟𝑑 = ∆𝐼
, determine the AC resistance of the silicon diode at 𝐼𝐷 = 9 𝑚𝐴 using
the curve of Fig. 1.5. Show all work.

𝑟𝑑(𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑) =______________________

26 𝑚𝑉
b.) Determine the AC resistance at at 𝐼𝐷 = 9 𝑚𝐴 using the equation 𝑟𝑑 = 𝐼𝐷
for silicon diode.

𝑟𝑑(𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑) =______________________

How do the result of a and b compare?

c.) Repeat step a for 𝐼𝐷 = 2 𝑚𝐴 for the silicon diode.

𝑟𝑑(𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑) =______________________

d.) Repeat step b for 𝐼𝐷 = 2 𝑚𝐴 using the silicon diode.

𝑟𝑑(𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑) =______________________

How do the result of c and d compare?

F. Firing Potential

Graphically determine the firing potential (threshold voltage) of each diode from its
characterestics as defined in the Theory Operation.

𝑽𝑻(𝒔𝒊𝒍𝒊𝒄𝒐𝒏) =________________

𝑽𝑻(𝒈𝒆𝒓𝒎𝒂𝒏𝒊𝒖𝒎) =________________
RESULT AND FINDINGS:

Table 1.1
Test Si Ge
Forward 0.557 V 0.250 V
Reverse 0V 0V

Table 1.2
Test Si Ge
Forward 0.673 MΩ 1.120 KΩ DMM
Reverse 0 4.739 MΩ DMM

Table 1.3
SILICON DIODE

(using DMM) (using Multisim)

𝑽𝑹 (V) 𝑽𝑫(V) 𝑰𝑫 (mA) 𝑽𝑫(V) 𝑰𝑫 (mA)
0.1 0.566 0.1013171226 0.417563 0.1000618382
0.2 0.573 0.2026342452 0.452748 0.2001236764
0.3 0.577 0.3039513678 0.473417 0.3001855146
0.4 0.582 0.4052684904 0.488254 0.4002473529
0.5 0.587 0.506585613 0.499615 0.5003091911
0.6 0.591 0.6079027356 0.509088 0.6003710293
0.7 0.597 0.7092198582 0.517195 0.7004328675
0.8 0.600 0.8105369807 0.523966 0.8004947057
0.9 0.604 0.9118541033 0.536161 0.9005565439
1 0.607 1.013171226 0.72066 1.000618382
2 0.626 2.026342452 0.592494 2.001236764
3 0.644 3.039513678 0.6087832 3.001855146
4 0.654 4.052684904 0.619193 4.002473529
5 0.663 5.06585613 0.628533 5.003091911
6 0.672 6.079027356 0.636391 6.003710293
7 0.678 7.092198582 0.643358 7.004328675
8 0.683 8.105369807 0.644354 8.004947057
9 0.689 9.118541033 0.649453 9.005565439
10 0.693 10.13171226 0.654969 10.00618382
 Table 1.4
GERMANIUM DIODE

(using DMM) (using Multisim)

𝑽𝑹 (V0 𝑽𝑫(V) 𝑰𝑫 (mA) 𝑽𝑫(V) 𝑰𝑫 (mA)
0.1 0.229 0.1013171226 0.1
0.462106 V
0.2 0.232 0.2026342452 0.2
0.488597 V
0.3 0.234 0.3039513678 0.3
0.504394 V
0.4 0.237 0.4052684904 0.4
0.515692 V
0.5 0.238 0.506585613 0.5
0.524503 V
0.6 0.241 0.6079027356 0.6
0.531739 V
0.7 0.242 0.7092198582 0.7
0.537751 V
0.8 0.244 0.8105369807 0.8
0.543051 V
0.9 0.245 0.9118541033 0.9
0.547665 V
1 0.247 1.013171226 1
0.551814 V
2 0.258 2.026342452 2
0.57917 V
3 0.267 3.039513678 3
0.595151 V
4 0.274 4.052684904 4
0.606521 V
5 0.279 5.06585613 5
0.615351 V
6 0.285 6.079027356 6
0.622528 V
7 0.288 7.092198582 7
0.628606 V
8 0.293 8.105369807 8
0.633878 V
9 0.295 9.118541033 9
0.638531 V
10 0.300 10.13171226 10
0.642692 V

For Fig. 1.6. (reverse bias)

Silicon Diode Germanium Diode

𝑹𝒎 = 10 𝑀Ω; 𝑹𝒎𝒆𝒂𝒔 = 1.005 𝑀Ω 𝑹𝒎 = 10 𝑀Ω; 𝑹𝒎𝒆𝒂𝒔 = 1.005 𝑀Ω
𝑽𝑅 = 0.995 𝑉 𝑽𝑅 = 0.492 𝑉
𝑰𝑺 = 1.089549751 𝑰𝑺 = 0.5387522388

𝑉𝐷 𝑉𝐷 𝐸 − 𝑉𝑅
𝑅𝐷𝐶 = = =
𝐼𝐷 𝐼𝑆 𝐼𝑆

15𝑉−0.995 𝑉 15𝑉−0.492 𝑉
𝑅𝐷𝐶 = 1.089549751 𝑅𝐷𝐶 = 0.5387522388

𝑅𝐷𝐶(𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑) = 12.85393346 𝑅𝐷𝐶(𝑐𝑎𝑙𝑐𝑢𝑙𝑎𝑡𝑒𝑑) = 26.92889042

 Table 1.5

𝑰𝑫 (mA) 𝑽𝑫 𝑹𝑫𝑪
0.2
1
5
10

Table 1.6
𝑰𝑫 (mA) 𝑽𝑫 𝑹𝑫𝑪
0.2
1
5
10

Sumarry:

Conclusion: