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Kakatiya Institute of Technology & Science, Warangal-506015

This document is an exam paper for the subject VLSI Design. It contains 4 questions with multiple parts each. Question 1 asks about Moore's law, CMOS vs bipolar technologies, transconductance, and drawing an nMOS NOR gate. Question 2 focuses on nMOS fabrication processes, nMOSFET structure, and photolithography. Question 3 covers topics like pull-up/pull-down ratios, latch-up, BiCMOS inverters, and CMOS gates. Question 4 asks about nMOS design styles, building gates like XOR and decoders, and implementing logic functions with decoders. The paper tests knowledge of VLSI concepts and designing logic circuits.

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0% found this document useful (0 votes)
108 views2 pages

Kakatiya Institute of Technology & Science, Warangal-506015

This document is an exam paper for the subject VLSI Design. It contains 4 questions with multiple parts each. Question 1 asks about Moore's law, CMOS vs bipolar technologies, transconductance, and drawing an nMOS NOR gate. Question 2 focuses on nMOS fabrication processes, nMOSFET structure, and photolithography. Question 3 covers topics like pull-up/pull-down ratios, latch-up, BiCMOS inverters, and CMOS gates. Question 4 asks about nMOS design styles, building gates like XOR and decoders, and implementing logic functions with decoders. The paper tests knowledge of VLSI concepts and designing logic circuits.

Uploaded by

WARRIOR Gaming
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as DOCX, PDF, TXT or read online on Scribd
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“Write your Roll number”

KAKATIYA INSTITUTE OF TECHNOLOGY & SCIENCE, WARANGAL-506015


(An Autonomous Institute under Kakatiya University, Warangal)
B. Tech. (EIE) VI-Semester
I-Mid Semester Examination
U14EI604 VLSI DESIGN

Date: 01.02.2017 Note: Answer the following questions.

Time: 2 Hours Max. Marks: 25


1 a Define Moore’s law and explain the developments in IC Technology. 2

b Differentiate between CMOS and bipolar technologies. 2

c Define transconductance and derive an expression for the same. 2

d Draw the circuit diagram of a 3 input nMOS NOR gate. 1

2 a Explain nMOS fabrication process with the help of neat sketches. 3


b Show the structure of nMOSFET and derive an expression for Drain current. 3
(OR)
c With the help of neat sketches explain P-Well fabrication process. 3
d Elaborate on various types of etches used in photolithographic process. 3

3 a Derive Pull Up- Pull Down ratio for nMOS inverter driven by another nMOS 3
inverter.
b Write about latch up phenomenon. Explain how latch up can be eliminated. 3
(OR)
c With the help of circuit explain the operation of a simple BiCMOS inverter. 3
Mention the advantages and drawbacks.
d Draw the stick diagram for a 2 input CMOS NAND gate. 3

4 a Explain the nMOS design style for drawing the stick diagrams. Show the 3
coding.
b Draw the stick diagram for a 2 input nMOS XOR gate. Use color coding for 3
stick diagram.
(OR)
c With neat sketches explain Lambda based design rules. 3
d Draw the lay out for a 2 input nMOS NAND gate. 3

---- Paper Ends ----

Paper set by: Prof. K. Sivani


(b) Find the minimal SOP and POS expressions for the following function (3)
using K-Map and realize them with NAND and NOR gates respectively.
F(w,x,y,z)= ∑(0,1,2,3,4,6,7,8,9,11,15)
(c) Find the minimal expression for the following cyclic function using (3)
Tabulation (QM) method.
F(w,x,y,z)=∑(0,1,5,7,8,10,14,15)

4. (a) Write the truth table and derive the expressions for Sum and Carry outputs (3)
of a Full Adder circuit. Realize Full Adder circuit with two Half Adders.
(b) Construct a 4 to16 Decoder with five 2 to 4 Decoders with enable input and (3)
explain the operation.
(OR)
(c) Draw the schematic of a BCD Adder and explain its operation. (3)
(d) Implement the circuit which produces the following functions using a (3)
Decoder of appropriate size.
(i) F1(w,x,y,z)= xy’z’+x’y
(ii) F2(w,x,y,z)= ∑(0,1,4,5,6,7,9,10,11,15)

******

Paper set by:

Dr. K. Sivani
Sri.O.Anjaneyulu
Smt.B.Smitha
Sri. B.Venu Maheshwar
Sri. P.Yugander

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