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Bandgap of PN Diode

1. The experiment determines the band gap of a semiconductor using a PN junction diode by measuring the reverse saturation current (Is) at different temperatures and plotting log(Is) vs. 1/T. 2. As temperature increases, the reverse saturation current increases according to the relationship log(Is) = constant - ΔE(5.038/kT), where ΔE is the band gap. 3. From the slope of a linear fit to the log(Is) vs. 1/T plot, the band gap ΔE can be calculated in electron volts. For germanium the expected value is 0.7 eV and for silicon it is 1.14 eV.

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Vikash Singh
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10K views2 pages

Bandgap of PN Diode

1. The experiment determines the band gap of a semiconductor using a PN junction diode by measuring the reverse saturation current (Is) at different temperatures and plotting log(Is) vs. 1/T. 2. As temperature increases, the reverse saturation current increases according to the relationship log(Is) = constant - ΔE(5.038/kT), where ΔE is the band gap. 3. From the slope of a linear fit to the log(Is) vs. 1/T plot, the band gap ΔE can be calculated in electron volts. For germanium the expected value is 0.7 eV and for silicon it is 1.14 eV.

Uploaded by

Vikash Singh
Copyright
© Attribution Non-Commercial (BY-NC)
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOC, PDF, TXT or read online on Scribd
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Experiment No.

Object: To determine the band gap in a semiconductor using a PN junction diode. Apparatus required: Power supply (DC-3 volts for Ge diode and DC-6 volts for Si diode), Microammeter, Electrically heated oven, Thermometer, Semiconductor diode, connecting wires etc. Formula used: A graph is plotted between Log10 Is and (103/T) that comes out to be a straight line. Its slope is found. Band gap, E, in electron volts, is given by E = [(slope of the line)/5.038] eV Theory: In a semiconductor there is an energy gap between its conduction and valence band. For conduction of electricity a certain amount of energy is to be given to the electron so that it goes from the valence band to the conduction band. The energy so needed is the measure of the energy gap, E, between two bands. When a PN junction is reverse biased then current is due to minority carriers whose concentration is dependent on the energy gap, E. The reverse current, Is (saturated value) is a function of the temperature of the junction diode. For small range of temperature, the relation is expressed as Is = I0 exp (-E/kT) Therefore, Log10 Is = constant 5,038 E (103/T) Where, temperature T is in Kelvin, E is in electron volts (eV), k = Boltzman constatan, and = ideality factor (lies between 1 & 2). A graph in Log10 Is and (103/T) is plotted which comes out to be a straight line. The slope of this line will be 5.038 E, giving the value of band gap for the semiconductor. Procedure: 1. Connect P and N sides of junction diode to microammeter and battery with polarity in reverse biased. Put the diode in place on the board for heating and fix a thermometer to measure the temperature. 2. Start heating by connecting ovens lead to mains and allow the oven temperature to increase upto 78C in case of Ge diode and 190C in case of Si diode. 3. As temperature reaches about 78C, switch off the oven. The temperature will rise further, say about 80C and will become stable for Ge diode, off the oven at 190C the temperature will rise further, say about 200C and will become stable for Si diode.

4. Now temperature will begin to fall. Take current (in A) in the interval of 4C. Observations: Least count of thermometer =.. Least count of microammeter =. Constant voltage to diode = S.No. Temperatur e inC Current Is in A Temperature in K (103/T) K-1 Log10 Is

Calculations: Plot a graph between Log10 Is and (103/T) and find slope then find E = [(slope of the line)/5.038] eV Result: Band gap for given semiconductor PN diode =.eV. Standard results: E = 0.7eV for Ge E = 1.14eV for Si Percentage error =.% Source of error and Precautions: 1. Maximum temperature should not exceed 80C in case of Ge diode and 200C in case of Si diode. 2. Silicon diode, if used, will require a maximum temperature of the order of 200C. Therefore oven and thermometer should be of this requirement. 3. Diode should be placed well within the oven so that it is in good contact of the heat of the oven.

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