Code No: R1921041 R19 SET - 1
II B. Tech I Semester Regular Examinations, March - 2021
ELECTRONIC DIVICES AND CIRCUITS
(Electronics and Communication Engineering)
Time: 3 hours Max. Marks: 75
Answer any FIVE Questions each Question from each unit
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~
1 a) What is Hall effect? Derive the relation between mobility and hall coefficient? [8M]
b) Define a hole in a semiconductor? Indicate how a hole contributes to conduction [7M]
pictorially?
Or
2 a) Draw the band diagram of p-n junction diode? Define law of junction? [8M]
b) How many types of junction capacitances are there? Explain with neat diagrams? [7M]
3 a) Explain the two transistor analogy of an SCR. Draw the V-I characteristics of [8M]
SCR?
b) What are the various filter circuits used in rectifiers. Compare their performance. [7M]
Or
4 a) Derive the expressions for PIV, Ripple factor, Conversion Efficiency and TUF of a [8M]
Full wave rectifier.
b) What is UJT and draw the Construction, operation of a UJT along with its [7M]
characteristics?
5 a) Sketch a family of CE input and output characteristics for a transistor? Indicate the [8M]
cutoff, active and saturation regions?
b) With the help of suitable diagrams, explain the working of n-channel enhancement [7M]
MOSFET?
Or
6 a) Tabulate comparisons of CB, CE and CC configurations with examples. [8M]
b) An n-channel JFET has IDSS =10mA and VP = - 2V. Determine the drain source [7M]
resistance rDS for (i) VGS =0V. (ii) V GS = - 0.5V
7 a) Define the stability factors S, S' and S'' and derive the relation between them. [8M]
b) Define Thermal runaway. Derive the necessary condition to avoid thermal [7M]
runaway in a transistor?
Or
8 a) Explain the necessity of biasing a Transistor. Derive the Q-point of a self-bias [8M]
circuit.
b) Explain the stabilization of Q-point using sensistor and thermistor. [7M]
9 a) Derive simplified h parameter model of a transistor. State its advantages. Derive [8M]
an expression for voltage gain of CE, CB and CC amplifiers using simplified h
parameter model.
b) Describe the operation of common drain FET amplifier and derive the equation [7M]
for voltage gain.
Or
10 a) Draw the equivalent circuit of common source FET amplifier and derive the [8M]
expression for voltage gain.
b) Draw low frequency model of FET and list out advantages over BJT. [7M]
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Code No: R1921041 R19 SET - 2
II B. Tech I Semester Regular Examinations, March - 2021
ELECTRONIC DIVICES AND CIRCUITS
(Electronics and Communication Engineering)
Time: 3 hours Max. Marks: 75
Answer any FIVE Questions each Question from each unit
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~
1 a) Derive the condition of dynamic equilibrium for the density of charge carries for [8M]
continuity equation?
b) Give the mathematical analysis and show that the Fermi energy level lies in the [7M]
centre of forbidden energy band for an intrinsic semiconductor.
Or
2 a) Sketch neat diagram of I-V characteristics of p-n junction diode, and explain? Give [8M]
the relation between current I and voltage V?
b) For a Ge diode, the I0=2μA and the voltage of 0.26V is applied. Calculate the [7M]
forward and reverse dynamic resistance values at room temperature.
3 a) Define and derive the terms as referred to HWR circuit. i) PIV ii) Average [8M]
d.c. voltage iii) RMS current iv) Ripple factor.
b) Explain the significance of Rectifiers with filters, and what are the advantages of [7M]
capacitor filter over Inductor filter?
Or
4 a) Explain the Zener and Avalanche thermal breakdown mechanisms. What will be [8M]
their thermal coefficients?
b) Explain the principle and operation of tunnel diode with energy band diagrams? [7M]
5 a) Briefly discuss about the construction, working and static drain characteristics of [8M]
enhancement MOSFET?
b) Tabulate the comparisons between JFET and MOSFET? [7M]
Or
6 a) With suitable diagrams explain the input and output characteristics of a Common [8M]
Emitter Configuration.
b) Explain the operation of a Field effect Transistor. Derive an expression for pinch- [7M]
off voltage of a FET.
7 a) Draw and explain the Fixed Bias Circuit. Explain why the circuit is unsatisfactory [8M]
if the transistor is replaced by another of same type.
b) Discuss clearly the diode and sensistor compensation techniques. [7M]
Or
8 a) What is the necessity of biasing circuits? Derive the expression for stability factor [8M]
of self bias circuit.
b) In a Silicon transistor circuit with a fixed bias, VCC=9V, RC=3KΩ, RB=8KΩ, [7M]
β = 50, VBE=0.7V. Find the operating point and Stability factor.
9 a) Briefly explain about the JFET Small signal Model with the help of neat diagrams. [8M]
b) Analyze Common Emitter amplifier with Re circuit using h-parameter model. [7M]
Or
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Code No: R1921041 R19 SET - 2
10 a) Draw the exact h parameter model of a Transistor suitable for any configuration. [8M]
Derive expressions for voltage gain, current gain, input impedance and output
impedance of an amplifier using exact h parameter model?
b) Derive an expression for voltage gain of a Common Drain Amplifier. [7M]
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Code No: R1921041 R19 SET - 3
II B. Tech I Semester Regular Examinations, March - 2021
ELECTRONIC DIVICES AND CIRCUITS
(Electronics and Communication Engineering)
Time: 3 hours Max. Marks: 75
Answer any FIVE Questions each Question from each unit
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~
1 a) Explain the classification of Insulators, Semi conductors, and Metals using [8M]
Energy Band Diagrams?
b) Sketch the piecewise linear characteristics of a diode. What are the approximate [7M]
cut-in voltages for silicon and germanium?
Or
2 a) What do you mean by step graded junction? Derive the expression for diffusion [8M]
capacitance.
b) Explain the temperature dependent characteristics of PN junction diode? [7M]
3 a) Explain the operation of Full Wave Rectifier with Induction filter with [8M]
necessary diagrams.
b) A sinusoidal voltage whose Vm=26V is applied to half-wave rectifier. The diode [7M]
may be considered to be ideal and RL=1.2 KΩ is connected as load. Find out
peak value of current, RMS value of Current, DC value of current and Ripple
factor.
Or
4 a) What is tunneling phenomena? Explain the principle of operation of tunnel diode [8M]
with its characteristics.
b) Discuss the Principle of operation and draw characteristics of Silicon control [7M]
rectifier (SCR).
5 a) Explain the operation of CC Configuration of BJT and its input and output [8M]
characteristics briefly.
b) Draw and explain drain and transfer characteristics of depletion type MOSFET. [7M]
Or
6 a) With neat diagram explain the various current components in a p-n-p transistor. [8M]
b) What are the advantages of JFET over BJT? Justify JFET is the voltage control [7M]
device.
7 a) Explain the need for biasing in electronic circuits. What are the factors affecting [8M]
the stability factor.
b) Explain the DC and AC load Line analysis with the help of neat diagrams? [7M]
Or
8 a) Draw and explain the Voltage Divider Biasing with necessary examples? [8M]
b) A transistor with β = 100 is to be used in Common Emitter Configuration with [7M]
collector to base bias. The collector circuit resistance is RC = 1kΩ and VCC =
10V. Assume VBE = 0.
i) Choose RB so that the quiescent collector to emitter voltage is 4V.
ii) Find the stability factor.
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Code No: R1921041 R19 SET - 3
9 a) Draw the circuit diagram of CC amplifier using hybrid parameters and derive the [8M]
expression for AI, AV, Ri and RO.
b) Explain and draw the common source FET amplifier and its equivalent circuit [7M]
and derive the expressions for Av and Ri
Or
10 a) Derive the expressions for Voltage gain and current gain for CE amplifier. [8M]
b) For the Common Source Amplifier, calculate the value of the voltage gain, given [7M]
i) rd =100KΩ, RL=10KΩ, gm=300μ and RO=9.09KΩ.
ii) If CDS=3pF, determine the output impedance at a signal frequency of 1 MHz.
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Code No: R1921041 R19 SET - 4
II B. Tech I Semester Regular Examinations, March - 2021
ELECTRONIC DIVICES AND CIRCUITS
(Electronics and Communication Engineering)
Time: 3 hours Max. Marks: 75
Answer any FIVE Questions each Question from each unit
All Questions carry Equal Marks
~~~~~~~~~~~~~~~~~~~~~~~~~
1 a) Define diffusion and transition capacitance of p-n junction diode. Prove that [8M]
diffusion capacitance is proportional to current I.
b) Obtain the static and dynamic resistances of the p-n junction germanium diode, [7M]
if the temperature is 270 C and Io=1μA for an applied forward bias of 0.2 V.
Assume =1.38×10-23J/0k.
Or
2 a) Derive the expression for Concentration of Hole and Electron in an intrinsic [8M]
semiconductor and also draw the Fermi level position in intrinsic semiconductor.
b) State and prove continuity equation. [7M]
3 a) Draw the circuit diagram of full wave rectifier with L-section filter and explain [8M]
its operation?
b) Explain the working of Tunnel diode and its V-I characteristics. And what is the [7M]
sufficient condition for tunneling?
Or
4 a) Construct Bridge rectifier circuit and derive equation for IDC, VDC, IRMS, VRMS, [8M]
and Rectifier efficiency.
b) With suitable diagrams explain the operation of varactor diode? [7M]
5 a) Explain input and output characteristics of transistor in CB configuration with [8M]
neat diagram.
b) Describe the construction and working principle of Enhancement mode and [7M]
depletion mode MOSFET and draw its characteristics.
Or
6 a) Explain CE configuration with the help of input and output characteristics. [8M]
b) Draw the construction diagram, operation characteristics and parameters of [7M]
JFET?
7 a) Write a short note on Stabilization against variations in VBE and β. [8M]
b) List out different types of biasing methods. Derive the equation for stability [7M]
factor for fixed bias.
Or
8 a) Explain the terms Bias Stabilization and Bias Compensation. [8M]
b) Determine the quiescent currents and the collector to emitter voltage for a Ge [7M]
transistor with β = 50 in the self biasing arrangements. The circuit component
values are VCC = 20V, RC = 2kΩ, Re = 0.1 kΩ, R1 = 100 kΩ and R2 = 5 kΩ. Find
the stability factor S.
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Code No: R1921041 R19 SET - 4
9 a) For CG amplifier, draw the small signal equivalent circuit and determine [8M]
expression for gain, input impedance and output impedance?
b) Draw the small signal equivalent circuit of FET amplifier in CS connection and [7M]
derive the equations for voltage gain, input impedance and output impedance?
Or
10 a) Draw the circuit of source follower Amplifier and derive the expressions for AI, [8M]
AV, Ri and Ro.
b) Draw the Common emitter amplifier with Emitter resistor and explain its [7M]
operation.
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