Photorefractive Effect in LiNbO 3 - Based Integrat
Photorefractive Effect in LiNbO 3 - Based Integrat
DOI 10.1007/s00340-009-3501-4
Received: 24 November 2008 / Revised version: 4 March 2009 / Published online: 2 April 2009
© Springer-Verlag 2009
Abstract Original results on investigation of the photore- Many detailed studies were reported for straight wave-
fractive effect in straight channels and integrated-optical cir- guides, IO circuits and some devices operating in the visible
cuits such as a directional coupler, Y-splitter and Mach– and near-IR regions of the spectrum [1–4], but only two sys-
Zehnder interferometer, exploiting titanium-indiffused and tematic studies were performed at 1.3 μm [5, 6] and no such
proton-exchanged LiNbO3 waveguides, are presented. It study was reported yet for PRD in IO circuits at wavelengths
has been found that the photorefractive damage is non- around 1.5 μm, while some particular features were reported
negligible for IR radiation with wavelengths near 1.5 μm in only for the latter wavelength range [7–9]. However, recent
all circuits studied. The new methods for accurate evaluation activities in guided-wave electro-optic and nonlinear-optic
of small extents of photorefractive effect are proposed. devices are directed towards optical communication appli-
cations and concentrated in the wavelength region from 1.46
PACS 42.82.Bq · 42.65.Hw · 42.82.-m to 1.63 μm, where the photorefractive effect generally de-
creases and, thus, it has been neglected without any exper-
imental verification at design of all the LiNbO3 integrated-
1 Introduction optical devices for telecom and other applications. It may
be regarded as the right approach for dominating part of
The photorefractive damage (PRD) is a well-known classi- modern devices operating at low optical intensities. How-
cal problem for most electro-optic and nonlinear optic ap- ever, the advanced devices are operating with the powerful
plications of LiNbO3 crystals: Optically induced change of IR radiation (>100 mW) [9–11]. At the same time, even a
refractive index creates difficulties to produce stable devices very small refractive index variation, occurring at low in-
in this material for visible and near-IR ranges. This problem put power, is important to consider, if the circuit is used
is most dramatic in case of integrated-optical (IO) devices, in a phase-sensitive system such as a fiber optical gyro-
utilizing channel waveguides, due to the following specific scope [12]. Therefore, the IO LiNbO3 circuits must be de-
features: (1) Light beams are confined in two dimensions to signed so that effects of the photorefractivity are adequately
region only a few micrometers in size, and very high opti- compensated and knowledge of photorefractive properties is
cal intensities are thus obtained even at small input power; required in developing advanced devices.
(2) The inhibition of diffraction leads to effects, which do
not occur in bulk samples; (3) Waveguide fabrication means
heavy doping, as industrial IO LiNbO3 devices are fabri- 2 Sample fabrication techniques
cated only by the two techniques: Ti-indiffusion or proton
exchange. A series of straight channel waveguides, directional cou-
plers and Y-splitters, utilizing the different geometries of
Y-junction branching, were delineated in optical grade X-cut
S.M. Kostritskii () LiNbO3 substrates, using standard photolithographic tech-
MPTE Department, Moscow Institute of Electronic Technology,
124498 Moscow, Zelenograd, Russia
nique. The channel width W for Y-splitters and straight
e-mail: [email protected] waveguides was varied in the range from 4.6 to 10 μm.
422 S.M. Kostritskii
excitation wavelength increase, while coefficient b related β = β + φr is the difference between propagation
to the dark conductivity is, indeed, independent of wave- constants in photorefractive waveguide, φr is relative
length. Note that dark conductivity in the both Ti-indiffused phase retardation caused by photorefractive effect, β =
and proton-exchanged LiNbO3 is much higher than in a β0 − β1 , and lc = π/β is the critical coupling length
bulk LiNbO3 material [4]. Hence it might be expected that needed to couple all of the power from one guide to the other
a higher power level is required to be close to saturation in the absence of photorefractive effect, i.e., at n∗ (t) ≈ 0.
of n∗s (P ) dependence at 1.5-μm excitation, and maximal A critical parameter of active directional coupler, i.e.
P = 490 mW used by us is significantly smaller than this electro-optically controlled amplitude modulator (switch), is
level. the crosstalk of the switching in the crossed state, when all
of the light coupled into the second guide (P2 has the max-
3.2 Directional couplers imally possible value, and P1 → 0, Fig. 5). When noted in
decibels (dB), the crosstalk is:
The comparative study of the different 1.5-μm-band
integrated-optical LiNbO3 circuits has showed that the di- CT = 10 × lg P1 /(P1 + P2 ) (5)
rectional couplers are most sensitive to the photoinduced
damage effects. This finding coincides with all the previous where P1 and P2 are the output powers of the initial guide
comparative studies performed at the different wavelengths and the coupled guide.
of visible and near-IR ranges [1, 8, 9]. The significant effect of the photoinduced index change
A passive directional coupler shown in Fig. 5 is designed upon crosstalk of a Ti:LiNbO3 directional coupler was ob-
so that each arm of the coupler is a single mode at the served previously [1, 5, 6] in the wide wavelength range
wavelength of interest, in this case ∼1.5 μm. Thus, the cou- from 0.633 to 1.3 μm. Thus, to achieve a crosstalk level
pler supports the symmetric and antisymmetric supermodes, of −30 dB at 1.3 μm in the 8-mm-long (7-μm-gap) active
which have different propagation constants β0 and β1 , re- Ti-indiffused directional coupler, the light intensity should
spectively. These passive couplers were observed to undergo be kept below 5 × 102 W/cm2 and −20 dB level is ob-
asynchronous, oscillatory power exchange, deviating from served at about 2 × 103 W/cm2 , which corresponds to ex-
its stable baseline signal at high input power. It has been tremely low input power of ≤150 and ≤600 μW, respec-
established that a fraction of the total energy oscillates be- tively [6]. Our experimental data show that the active direc-
tween the throughput P1 and crossover P2 channels, but it is tional couplers, operating at wavelengths near 1.5 μm, have
never totally transferred to the crossover channel. Amplitude a higher threshold of the photorefractive damage: a steady-
of this oscillation is gradually damped with time and some state crosstalk level of −20 dB is achieved at input power
steady-state stage is reached finally with an arbitrary value of about 10 and 35 mW in Ti-indiffused and APE LiNbO3
of the ratio P1 /P2 . Kinetics of the latter saturation process is couplers, respectively.
well described by the build-up time of photorefractive effect
(see (2)). Thus, it may be concluded, that effective or critical 3.3 Y-junction branching and Y-splitters
coupling length lc of the directional coupler is increased due
to photorefraction, as from coupled-mode theory [15, 16], Optical waveguides in lithium niobate are a very useful tech-
the output power ratio of this coupler being expressed as nique for building a variety of IO components. For exam-
ple, the key component of fiber optical gyroscope (FOG) is
P2 /P1 = tan2 (πL/2lc ) = tan2 (β L/2 + θr ) the multifunction integrated optics chip (MIOC), which is
an important part of the Sagnac interferometer [12]. As the
= tan2 πL/2lc + 2πLn∗ (t)/λ + θrc (4)
MIOC consists inherently an Y-junction branching, the pho-
where θrc represents the amount of residual coupling which torefractive effect can present the more dramatic problem,
occurs over the tapered region after the interaction length L, comparing to straight channel, if a change of refractive in-
dex is sufficient to induce even a small variation in the mode
coupling between two channel waveguides, representing the
arms of Y-junction near splitting point that can be regarded
as a directional coupler with short coupling length [15].
To fabricate a low-loss Y-splitter, we utilize a Y-junction
(section II) formed by three single-mode channel wave-
guides with width W = 6 μm (sections I and III), Fig. 6. The
Y-junction topology is described by the following equation:
Fig. 5 Illustration of a passive directional coupler including 7-μm
ye − ys
channels with 7-μm gap and interaction length L. Pin —input power, y(x) = ys + (x − xs ) (6)
P1 and P2 —output throughput and crossover powers xe − xs
426 S.M. Kostritskii
Fig. 6 Schematic illustration of
Y-junction splitter utilizing a
Y-junction (section II) formed
by three single-mode channel
waveguides (sections I and III)
with channel width W
αb = 1.3 dB. Further increase of θ is out of practical interest, The most dramatic photoinduced change of MER was ob-
as it will induce sharp growth of αb . served in MZ interferometric Ti-indiffused LiNbO3 modu-
According to the theory of closed-loop FOG [12], the ra- lator with the initial MER = 25 dB, as steady-state value of
tio PTC/PTC0 for light-induced change of Y-splitter per- MER observed at Pin = 120 mW was 19 dB.
formance should be ≤0.02 at application of MIOC in a high- To develop theoretical explanation of input-power depen-
precision FOG (bias drift ≤0.01◦ /h). It means that output dent MER, we consider that as Mach–Zehnder interferome-
power of superluminescent diode, which is used as a light ter consists of two Y-junction splitters, MER should depend
source with the center wavelength of 1.52–1.56 μm, should on PTC of Y-junction splitters and asymmetry of interfer-
be limited by 13 and 55 mW in Ti-indiffused and proton- ometer arms δ [16, 17]:
exchanged MIOCs, respectively. 1/2
Pmax /Pmin = 1 + δ + 1 − δ 2 1 − 2 /( + δ)2
3.4 Mach–Zehnder interferometers and interferometric (8)
modulators
where = (1 − 2 × PTC). Note that we assume that both
Since IO Mach–Zehnder (MZ) interferometer is symmet- Y-junction splitters have the same PTC value.
ric two-arms circuit, it should be most stable against small Thus, our model explains the light-induced degrada-
and moderate extent of photorefractive damage, which was tion of MER as consequence of PTC change (see Fig. 7)
confirmed experimentally at 1.3 [7, 8] and 1.48 μm [9]. caused by photorefractive effect in Y-junction splitters con-
However, some undesirable consequence of photorefractive sisting of MZ interferometer. Moreover, there is a rather
effect (e.g., DC drift [8, 9]) becomes evident only at ap- good quantitative correlation between theoretical and exper-
plication of MZ interferometers in electro-optical intensity imental data. For example, (7), (8) give MER = 29 dB at
modulators. Therefore, our investigation was focused on the δ = 0.06 and PTC = 0.495, while MER = 19 dB is obtained
input-power dependence of switching capability of the (MZ) at PTC = 0.465 and δ = 0.06. Such a variation of PTC is in
interferometeric modulators fabricated in X-cut LiNbO3 . good accordance with data on light-induced changes of PTC
To characterize the switching capability, we measure the for Y-junction splitters, Fig. 7.
modulation extinction ratio (MER) at the steady state, i.e.
after long-term (order of few or tens hours) illumination:
4 Conclusion
MER = 10 × lg(Pmax /Pmin ) (7)
The photorefractive effect is found to be non-negligible in
where Pmax and Pmin are maximum and minimum values of the integrated-optical LiNbO3 circuits intended for practical
output power observed at variation of external DC-voltage applications at wavelengths of third telecommunication win-
applied on modulator electrodes. dow. The directional couplers, Y-branching power dividers
To measure Pmax and Pmin , the DC-voltage was gradually and MZ interferometers exhibit the light-induced degrada-
varied within the range from −34 to +34 V, inducing a cos2 - tion of important parameters even at a moderate input power,
like dependence of output optical power on applied voltage. where light-induced cut-off of guided light is not observed.
This dependence has three maximums and two minimums Besides, the influence of photorefractive effect on splitting
for the output power. ratio of Y-junction and modulation contrast of MZ interfer-
Our experimental study shows that MER depends on the ometric modulators have been observed at the first time.
input power Pin at moderate and high power levels in all our
MZ interferometric modulators. However, quantitative char-
acter of this dependence is very different even for MZ modu- References
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