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0002576-00-03 S By-Pass Diode 1

The document describes a silicon bypass diode designed to protect multi-junction space grade solar cells from reverse current damage. It includes specifications on design, mechanical data, and electrical performance, highlighting its dimensions, weight, and threshold values. The diode is customizable for specific applications and is ECSS-qualified.

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simpsonlee1400
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0% found this document useful (0 votes)
27 views2 pages

0002576-00-03 S By-Pass Diode 1

The document describes a silicon bypass diode designed to protect multi-junction space grade solar cells from reverse current damage. It includes specifications on design, mechanical data, and electrical performance, highlighting its dimensions, weight, and threshold values. The diode is customizable for specific applications and is ECSS-qualified.

Uploaded by

simpsonlee1400
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Silicon Bypass Diode

Type: Si Bypass Diode

This state-of-the-art discrete silicon diode is designed to reliably protect individual multi-junction
space grade solar cells from reverse current damage. These diodes are designed to be mounted
in the cropped corners of the solar cell, but this technology can be customized for specific
application needs upon request.

Issue date: AZUR SPACE Solar Power GmbH Certified Company


2019-09-24 Theresienstr. 2
74072 Heilbronn
ISO 9001
DB 002576-00-03 phone: +49 7131 67 2603
Page 1 of 2 telefax: +49 7131 67 2727 ISO 14001
e-mail: [email protected] OHSAS 18001
Copyright © 2010 AZUR SPACE Solar Power GmbH website: www.azurspace.de
Silicon Bypass Diode
Type: Si Bypass Diode

Design and Mechanical Data


Base Material CZ, <100>, n+ p p+ structure
Dimensions 10.9 mm x 10.9 mm
Diode Area 0.59 cm²
Average Weight ≤ 30 mg
Thickness 130 ± 30 μm
Ag - Thickness 3 – 11 μm (all contacts)
Contact n-side with thermal oxide at edges, p-side fully covered
Resistivity p-doped (boron) 2 Ωcm ± 1 Ωcm

Electrical Data
Forward Voltage ≤ 0.8 V @ IFV = 620 mA
Reverse Current ≤ 1 µA @ VREV = 4 V

Threshold Values
Pulltest > 5 N at 45° welding test (with 35 µm Ag stripes)
Development Status ECSS - Qualified

Issue date: AZUR SPACE Solar Power GmbH Certified Company


2019-09-24 Theresienstr. 2
74072 Heilbronn
ISO 9001
DB 002576-00-03 phone: +49 7131 67 2603
Page 2 of 2 telefax: +49 7131 67 2727 ISO 14001
e-mail: [email protected] OHSAS 18001
Copyright © 2010 AZUR SPACE Solar Power GmbH website: www.azurspace.de

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