Silicon Bypass Diode
Type: Si Bypass Diode
This state-of-the-art discrete silicon diode is designed to reliably protect individual multi-junction
space grade solar cells from reverse current damage. These diodes are designed to be mounted
in the cropped corners of the solar cell, but this technology can be customized for specific
application needs upon request.
Issue date: AZUR SPACE Solar Power GmbH Certified Company
2019-09-24 Theresienstr. 2
74072 Heilbronn
ISO 9001
DB 002576-00-03 phone: +49 7131 67 2603
Page 1 of 2 telefax: +49 7131 67 2727 ISO 14001
e-mail:
[email protected] OHSAS 18001
Copyright © 2010 AZUR SPACE Solar Power GmbH website: www.azurspace.de
Silicon Bypass Diode
Type: Si Bypass Diode
Design and Mechanical Data
Base Material CZ, <100>, n+ p p+ structure
Dimensions 10.9 mm x 10.9 mm
Diode Area 0.59 cm²
Average Weight ≤ 30 mg
Thickness 130 ± 30 μm
Ag - Thickness 3 – 11 μm (all contacts)
Contact n-side with thermal oxide at edges, p-side fully covered
Resistivity p-doped (boron) 2 Ωcm ± 1 Ωcm
Electrical Data
Forward Voltage ≤ 0.8 V @ IFV = 620 mA
Reverse Current ≤ 1 µA @ VREV = 4 V
Threshold Values
Pulltest > 5 N at 45° welding test (with 35 µm Ag stripes)
Development Status ECSS - Qualified
Issue date: AZUR SPACE Solar Power GmbH Certified Company
2019-09-24 Theresienstr. 2
74072 Heilbronn
ISO 9001
DB 002576-00-03 phone: +49 7131 67 2603
Page 2 of 2 telefax: +49 7131 67 2727 ISO 14001
e-mail:
[email protected] OHSAS 18001
Copyright © 2010 AZUR SPACE Solar Power GmbH website: www.azurspace.de