Course code Course title L T P J C
BAPHY107 Physics of Semiconductor Devices 3 0 2 0 4
Pre-requisite Syllabus version
1.0
Course Objectives
1. To explain the formation of energy bands through quantum mechanics.
2. To strengthen the basic concepts such as thermal equilibrium, Fermi energy, flat
energy band diagram and band bending.
3. To understand the physics and operation of basic semiconductor devices.
Course Outcomes
At the end of the course students will be able to
1. Solve simple one-dimensional quantum mechanical problems using the time-
independent Schrödinger equation.
2. Explain the origin of energy bands in solids based on quantum mechanical principles.
3. Estimate carrier concentration in semiconductors and their transport by drift and
diffusion.
4. Establish the current-voltage characteristics of a PN-junction by examining the
underlying carrier transport and recombination mechanism.
5. Demonstrate quantum phenomena and physical properties of semiconductors using
experiments and simulation.
Module:1 Basics of Quantum Mechanics 8 hours
Planck’s idea of quantization Planck’s radiation formula de-Broglie hypothesis and idea
of matter waves Heisenberg uncertainty principle Schrödinger wave equations Time
dependent and independent forms Particle in a 1-D box Tunnelling effect.
Module:2 Semiconductor Fundamentals 8 hours
Classification of materials E-k diagram Formation of energy bands Direct and indirect
bandgap semiconductors Concept of hole Effective mass Flat energy band diagram
Concept of Fermi level Energy band diagram of metal, insulator and semiconductor.
Module:3 Carrier Transport Phenomena 8 hours
Equilibrium charge carrier concentration in semiconductors Intrinsic and extrinsic
semiconductors Carrier mobility Drift and Diffusion of carriers Einstein relation
Generation, Recombination and Injection of charge carriers Metal-semiconductor
contacts (Ohmic and Schottky).
Module:4 Junction Diodes 8 hours
PN Junction Equilibrium and biased Contact potential and space charge phenomena
Electrostatics of junction Current-Voltage relationship Zener Diode Schottky Diode
LED and Photodiode.
Module:5 Transistors 11 hours
Bipolar Junction Transistor Input and output characteristics (Common Emitter)
Amplification factor Field effect transistor MOSFETs Structure Current-Voltage
characteristics design of MOSFET Enhancement and Depletion mode MOSFETs.
Module: 6 Contemporary Topics 2 hours
Lectures by Industry or Research experts
Total Lecture hours: 45 hours
Text Book(s)
1. Ben G. Streetman, Sanjay Kumar Banerjee, Solid State Electronic Devices,
Pearson, 2016.
2. Donald A. Neamen, Semiconductor Physics and Devices, 4th Edition, Tata McGraw-
Hill, 2017.
Reference Books
1. Robert F. Pierret, Semiconductor Device Fundamentals, Pearson Education, 2006
2. S. S. Islam, Semiconductor Physics and Devices, Oxford University Press, 2009.
3. S. M. Sze and Kwok K. Ng, Physics of Semiconductor Devices, 3 rd Edition, Wiley
India, 2008.
Mode of Evaluation: Quiz, Assignment, CAT and FAT
Lab Experiments (Indicative)
1. To determine the de Broglie wavelength of electrons by diffraction method.
2. To determine the Planck’s constant using the characteristics of an LED.
3. To determine the work function of a metal through photoelectric effect.
4. To visualize and understand the quantization of energy levels and probability
distributions of a particle confined in a one-dimensional potential well.
5. To calculate the uncertainty in position (slit width) and momentum of photons
using single-slit diffraction.
6. To demonstrate the tunnelling effect in tunnel diode using I-V characteristics.
7. To study the conductivity of the given semiconductor material using four probe
method.
8. To analyse the current-voltage (I-V) characteristics of a photodiode.
9. To analyse the current-voltage (I-V) characteristics of a Zener Diode.
10. To determine the efficiency of a solar cell under standard illumination.
11. To study the input and output characteristics of a BJT.
12. To study the input and output characteristics of a MOSFET.
13. To determine the mobility of carriers in a given semiconductor material using Hall
effect.
14. To determine the carrier concentration in a given semiconductor material using
Hall effect.
15. To determine the energy gap of a given semiconductor by Four probe method.
Total Laboratory Hours 30 Hours
Text Book(s)
1. Ben G Streetman, Sanjay Kumar Banerjee, Solid State Electronic Devices, Pearson,
2016.
Reference Books
1. S. S. Islam, Semiconductor Physics and Devices, Oxford University Press, 2009.
Mode of Evaluation: Continuous assessment, FAT, Oral examination
Recommended by Board of DD-MM-YYYY
Studies
Approved by Academic Council No. xx Date DD-MM-YYYY
