Semiconductor Diode or PN Junction Diode

If one side of a semiconductor material doped with acceptor impurities while the other side doped
with donor impurities, then there the P-type region is created on one side of the semiconductor material and
the N-type region on the other side. The interface or boundary between these two regions (N-type and P-
type) is called a PN Junction.

Diffusion and Drift are important processes that take place during the formation of a p-n Junction. Due to
the diffusion of electrons and holes, an electric field region develops between the N-type and P-type region
that is called the depletion region.
This electric field is responsible for the movement of electrons from the p-type region to the n–type region
and holes from the n-type region to the p-type region. This movement of charged carriers (electrons and
holes) due to the electric field is called drift.

There is a voltage or potential difference across the junction due to the Positive ion in the N-type region and
the Negative ions in the P-type region. This voltage or potential difference is called Built-in-potential or
Barrier Potential. If an electron wants to move from the n-type region to the p-type region, it has to
overcome this Barrier Potential. The Potential difference of a Silicon Diode is 0.7v and 0.3v for a
Germanium Diode.

PN Junction Diode has two leads or terminals; these are connected to the P-type and N-type regions. The
lead or terminal connected to the p-type region is called the anode or Positive terminal and the lead
connected to the n-type region is the cathode or Negative terminal.
The symbol of a diode is like an arrowhead which front point has a bar. The arrowhead direction shows the
direction of the current flow. We can easily identify the polarity by seeing the “bar” on the symbol; this side
is the cathode or negative terminal. For the actual diode, a white line around the circumference of the diode,
the side is the cathode or negative terminal.
Biasing of PN Junction Semiconductor Diode:
The process of applying the external voltage to a p-n junction diode is known as bias. Based on the applied
external voltage, there are three types of “biasing” possible for the P-N Junction Diode, these are:
Zero Bias (ZB):
In this case, when no external voltage or potential energy is applied to the P-N junction diode, then it is in
equilibrium condition. This is also called a zero bias or unbiased p-n junction. The zero bias is the normal
condition of a P-N junction diode. So, you have already seen what is happening inside the PN junction
semiconductor in the “How is a PN Junction Formed” part.
Forward Bias (FB):
When the p-type region (Anode terminal of Diode) is connected to the positive terminal of the external
voltage source (Like battery) and the n-type region (Cathode terminal of Diode) to the negative terminal,
then the P-N junction diode is said to be connected in Forward Bias condition.

In this biasing, If this external voltage is greater than the value of the potential barrier (0.7 volts for silicon
and 0.3 volts for germanium), then the negative terminal provides free electrons (negative charge
carriers) in the n-type region. So the concentration of free electrons increases in this region, due to
repulsion electrons get enough energy to pass through the depletion layer and combine with the holes.
On the other side, the positive terminal provides holes (Positive charge carriers) in the P-type region. So the
concentration of holes increases in this region, due to repulsion holes get enough energy to pass through the
depletion layer. As result, the reduction in the number of positive and negative ions and neutralize the
depletion region, and the width of the depletion region decreases.
Reverse Bias (RB):
When the p-type region (Anode terminal of Diode) is connected to the negative terminal of the external
voltage source (Like battery) and the n-type region (Cathode terminal of Diode) to the positive terminal,
then the P-N junction diode is said to be connected in Reverse Bias condition.
In this biasing, when the positive voltage applied to the N-type region, then the electrons in this region
attract by the positive electrode (positive terminal of the external voltage source) and electrons flow away
from the junction to the positive electrode and leaving behind the positive ions.
On the other hand, when the negative voltage applied to the P-type region, then the holes in this region
attract by the negative electrode (negative terminal of the external voltage source) and holes flow away from
the junction to the negative electrode and leaving behind the negative ions.
As result, the depletion layer grows wider. The width of the depletion region is directly proportional to the
reverse voltage applied to the p-n junction diode. It means when the reverse voltage is increased then the
width of the depletion region is also increases.
V-I Characteristics of PN Junction Diode:
The V-I characteristics of the PN junction diode is a voltage Vs current graph, that explains the relationship
between voltage and current in a Diode.

When the PN junction diode is in forward bias, at zero voltage, zero current will flow through the diode. If
the applied voltage is less than the barrier potential, a small current flows through the diode. But, when the
applied voltage exceeds the barrier potential, the current starts flowing through the diode and increases
rapidly. This applied voltage value that will start the current flow through the diode is known as forward
voltage or VF of a diode. It is also called knee voltage.
When the PN junction diode is in reverse bias, at the zero reverse voltage no current flows through it. If
the reverse voltage increases a very small current starts flowing through the diode are known as Reverse
Leakage Current. This reverse current is so small, its range of 0.000000001A or 1nA, that’s has no notable
effects in a circuit, and it is considered almost zero.
After a certain point when you further increase the reverse voltage, the diode starts conducting heavily in the
reverse direction and the current starts flowing rapidly through the diode. This process called Avalanche
Breakdown and this voltage is known as Reverse breakdown voltage.
Why Silicon is more preferred over Germanium to design Diodes:
There are two important points we can easily understand why silicon is more preferred over germanium to
make Diodes. Also, we can see the difference between the Diodes made of silicon and the Diodes made of
germanium.
 Conditions Diodes made of Silicon Diodes made of Germanium
Forward bias voltage Approximately 0.7 volts Approximately 0.3 volts
Working temperature Works at high temperature Working temperature is less than silicon. At high
temperatures, the Germanium crystal structure is
destroyed.

Applications:
PN junction diode is mainly used in:
 Clipping circuits for wave shaping.
 Clamping circuits for DC restoration.
 Voltage multipliers.
 Rectifier circuit.
 Used in demodulation circuits.
 Forward bias condition is used in all Light Emitting Diodes (LED) lighting applications.

Ideal Diode and Real/Practical Diode:

Ideal Diode:
A diode is said to be an Ideal Diode when it is forward biased and acts as a perfect conductor, with zero
voltage across it. Similarly, when the diode is reversed biased, it acts as a perfect insulator with zero current
through it.
The V-I characteristics of the Ideal diode are shown in the figure below:

An Ideal diode also acts as a switch. When the diode is forward biased it acts like a closed switch as shown
in the figure below.

Whereas, if the diode is reversed biased, it acts as an open switch as shown in the figure below:
 Real Diode or Practical Diode:
A Real diode contains barrier potential V0 (0.7 V for silicon and 0.3 V for Germanium) and a forward
resistance RF of about 25 ohms. When a diode is forward biased and conducts a forward current I F flows
through it which causes a voltage drop IFRF in the forward resistance.
Hence, the forward voltage VF applied across the real diode for conduction has to overcome the following.
 Potential barrier
 Drop in forward resistance
i.e.,

For Silicon diode, the equation becomes as shown below:

For Silicon diode the equation becomes

The V-I characteristic of the Real diode is shown below:

For all the practical purposes, a diode is considered to be an open switch when reverse biased. It is because
the value of reverse resistance is so high (RR > 100 MΩ) that is considered to be infinite for all practical
purposes.
The equivalent circuit of the real diode under forwarding bias condition is shown below:

This circuit shows that a real diode still acts as a switch when forward biased, but the voltage required to
operate this switch is VF,