100 w sspa

100W SSPA at 13.56MHz
Guided By:
Internal-
Mr. Nimesh Prabhakar
Prepared By:
Name: Patel Avani M.
Branch: E.C.(M.E.)
Semester: 3rd

Contents
• Introduction
• Literature Review
• Block diagram
• Specifications
• Design a Input matching Circuit
• Design a Output matching Circuit
• Simulation Results
• Conclusion
• Work plan
• References

Introduction
• An amplifier is an electronic circuit that increases the voltage,
current or power of a signal.
• Amplification can be done with a vacuum tube or transistor.
• In transistors the electrons are passed through the solid
material therefore named solid state device.
• In power amplifier, voltage and current level of the signal is
increased.
• Basically, there are four types of the power amplifier which are
class A, class B, class AB and class C. Here class B power
amplifier is planned to be used.
• Plasma can be generated by radio frequency power at various
frequencies.

Literature Review
Sr.
No.
Authors Title of the
paper
Name of
the
journal
Publicatio
n Year
1. Congjie Wu and
Yalin Guan
Design and
Simulation of
Driver Stage
Power Amplifier.
IEEE
conference on
Advanced
Research &
Technology in
Industry
Applications.
2014
2. Basem
M.Abdrahman,
Hesham N.
Ahmed and
Mahmoud E.
Gouda
Design of a 10W,
highly linear, Ultra
wideband power
Amplifier Based
on GaN HEMT.
IEEE
conference on
Engineering &
Technology.
2012

3. Sungcheol You,
Kyunhoon Lim,
Jaeyong Ch, Minchul
Seo, Kyungwon Kim,
Jaewoo Sim,
Myungkyu Park and
Youngoo Yang
A 5W Ultra-Broadband
Power Amplifier Using
Silicon LDMOSFETs.
IEEE conference
on Asia Pacific
Microwave.
2009
4. Jaewoo Sim, Jaeyeon
Lim, Myoungkyu Park,
Wenwoo Kang and
Bak-IL Mah
Analysis and Design of
wide-band Power
Amplifier Using GaN.
IEEE conference
on Asia Pacific
Microwave.
2009
5. G. Anusha, A. Sai
Suneel and M. Durga
Rao
Design and Simulation
of Solid State Power
Amplifier with ADS
for Pulsed Radar
Applications.
IJIRCCE, Vol. 3,
Issue 6.
2015

• This paper is designed for frequency from 930 to 960MHz.
The gain is 15.6dB at the 945MHz frequency as shown in the
Figure 2 and the gain flatness of this power amplifier is about
±0.1dB in the frequency range of 930-960MHz. The output
power is 26.6dBm. ATF-5019 transistor is used. The stability
factor of this transistor is 2.590 at 945MHz frequency as
shown in Figure 1. The ADS software is used for the
simulation purpose. The transistor is biased for class A power
amplifier.
1. Congjie Wu
and Yalin
Guan
Design and
Simulation of
Driver Stage
Power Amplifier
IEEE conference on
Advanced Research &
Technology in
Industry Applications.
2014

Figure 1: The stability curve of
ATF-50189 [1]
Figure 2: Graph of the gain vs.
frequency [1]

• This power amplifier is designed for 0.8 to 4.2GHz frequency
range. The gain is 10 ± 1.5dB over the entire operating
frequency range. The output power is 10W. CGH40025F
transistor is used. The CGH40025F is used up to 6GHz
frequency range and it gives 13dB gain in the 4GHz frequency.
The stability factor of transistor is greater than one as shown in
Figure 3. The power added efficiency is 28%. The transistor is
biased for class AB power amplifier.
2. Basem
M.Abdrahman
, Hesham N.
Ahmed and
Mahmoud E.
Gouda
Design of a 10W,
highly linear, Ultra
wideband power
Amplifier Based on
GaN HEMT
IEEE conference
on Engineering &
Technology.
2012

Figure 3: The Stability Factor
of the transistor [2]
Figure 4: Output power, power
gain and PAE at 3GHz [2]

• This paper is designed for frequency range from 2 to 500MHz.
The gain is 22 ± 1.5dB from 2 to 500MHz. The output power
is 5W. They used MRF281Z transistor. The transistor is biased
for class AB power amplifier. They used push pull
configuration. The power added efficiency is 43%. The input
and output matching is done by using a transformer. The
calculated gain is 21 with less than 1.5dB fluctuation as shown
in the Figure 4.
3. Sungcheol You,
Kyunhoon Lim,
Jaeyong Ch, Minchul
Seo, Kyungwon Kim,
Jaewoo Sim,
Myungkyu Park and
Youngoo Yang
A 5W Ultra-
Broadband Power
Amplifier Using
Silicon
LDMOSFETs
IEEE
conference
on Asia
Pacific
Microwave.
2009

Figure 5: The measured and
simulated power gains from 2 to
500MHz [3]
Figure 6: The measured and
simulated output P1dB’s from
2 to 500MHz [3]

• This power amplifier is designed for the wide band. This
power amplifier is designed for the frequency range from
500MHz to 2500MHz range. The gain is 12dB ± 1dB from
500MHz to 2500MHz. The output power is very flat: 43dBm ±
1dBm from 500MHz to 2500MHz. The efficiency is 40% at
500MHz and 33% at 2500MHz as shown in Figure 7. The
CGH40025 transistor is used and the stability factor of this
transistor is 1.2. The ADS software is used for simulation
purpose.
4. Jaewoo Sim,
Jaeyeon Lim,
Myoungkyu Park,
Wenwoo Kang
and Bak-IL Mah
Analysis and
Design of wide-
band Power
Amplifier Using
GaN
IEEE conference
on Asia Pacific
Microwave.
2009

Figure 7: The graph of the output power
P1dB and efficiency [4]

• This power amplifier is designed and simulated for 380MHz.
The bandwidth is 10MHz. The gain of this power amplifier is
11dB. The efficiency is 20%. The output power is 31dB. The
MRF 134 transistor is used. The stability factor of this
transistor is 1.161 at 380MHz frequency as shown in the
Figure 8. The ADC software is used for simulation purpose.
The transistor is biased for class AB power amplifier.
5. G. Anusha, A. Sai
Suneel and M.
Durga Rao
Design and Simulation of
Solid State Power
Amplifier with ADS for
Pulsed Radar Applications
IJIRCCE,
Vol. 3, Issue
6.
2015

Figure 8: The stability graph of
the MRF 134 in ADS [5]
Figure 9: Graph of harmonics
vs. frequency in the ADS
software [5]

Block diagram
Figure 10: Block diagram of solid state power amplifier

• Here RF input is given to the input circuit and output is taken
from the output circuit.
• MOSFET is active component and amplification process is
done by that.
• The biasing is a process in which we apply external dc
voltages to select the appropriate operating point.
• There are three types of biasing which are fixed biasing, self
biasing and voltage divider biasing.
• Impedance matching is done at the input side by input
matching circuit and at the output side by output matching
circuit.
• Impedance matching is done for two reason. First one is to
transfer maximum power to the load and second reason is to
protect the circuit from reflected power.
• The maximum power transfer theorem says that to transfer the
maximum amount of power from source to a load, the load
impedance should be matched with the source impedance.

Design a Input matching Circuit
• Rg = 50Ω
• Q = 3.18
• XL = Q × RL
• XL = 14.31Ω
• XC = Rg / Q
• XC = 15.72Ω
• L = XL / 2πf = 168nH
• C = 1 / 2πf XC = 750pF
R150Ohm
C1 750pF
L1168nH
C2 2.55nF R2 4.5Ohm
Figure 11: Circuit of the input
impedance matching
Z11 = (4.5 – j4.6)Ω

Design a Output matching Circuit
• RL = 50Ω
• Q = 2.48
• XL = Q × Rg
• XL = 17.35Ω
• XC = RL / Q
• XC = 20.16Ω
• L = XL / 2πf = 204nH
• C = 1 / 2πf XC = 583pF
R1 7Ohm C1 3.45nF C2 583pF
L1204nH
R250Ohm
Figure 12: Circuit of the output
impedance matching
Z22 = (7 – j3.4)Ω

Simulation results
• Power transfer in the input side:
Figure 13: Figure of the power transfer in the input circuit in a TINA-TI
software

Calculations:
• At the 50Ω, Vp = 1V
Power = Vp
2 / (2×R) = (1)2 / (2×50) = 0.01W
• At the 4.5Ω, Vp-p = 600.82mV
Power = Vp-p
2 / (8×R) = (600.82×10-3)2 / (8×4.5)
=0.01W.

• Power transfer in the output side:
Figure 14: Figure of the power transfer in the output circuit in the TINA-TI
software

Calculations:
• At the 50Ω , Vp = 1V
So, the power (P) = Vp
2 / (2×R) = (1)2/ (2×50) = 0.01W
• At the 7Ω, Vp-p = 708.48mV
Power = Vp-p
2 / 8R = (708.48×10-3)2 / (8×7) = 0.01W

Conclusion
• It can be concluded that selection of proper MOSFET was
done based on the desired specification. Based on these
parameters, stability of the MOSFET (K=3.1) was checked.
For optimum performance, the impedance matching circuit
was designed.

100 w sspa

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