SlideShare a Scribd company logo
Building Impedance Matching network based on S-Parameter
from manufacturer
Aizuddin Nuruddin, Tengku Azhar, Zharfan Hamdan, Khairom Nizam Mohamed, Ahmad Redzman
Wireless, Photonics and System Technology, MIMOS Berhad.
Technology Park Malaysia 57000 Bukit Jalil Kuala Lumpur
Email – aizuddin@mimos.my
Abstract: To maximise power transfer in a radio
frequency (RF) system, impedance matching is
necessary. Advance design tools such as those
available in Agilent Advance Design Software
(ADS) has greatly made the impedance
matching process simpler, faster, and more
accurate. In the absence of a reference design at
a particular non-popular frequency range, the
Optimize feature in ADS may be useful to build
the impedance matching network. This paper
describes the method of using this feature to
synthesise the impedance matching network for
the above mentioned frequency for the
MMZ09332BT1 from Freescale, using ideal and
real components based on the original s-
parameters provided by the manufacturer.
Index Term- Matching network, s-parameters.
I. Introduction
Impedance matching is often a part of the larger
design process for a radio frequency (RF) system.
Impedance matching is a network placed between a
load and source. Matching network is required to
make the impedance seen looking into the
matching network to be equivalent with the
characteristic impedance of the network, Zo. If the
source impedance, Zs, and the load impedance, ZL,
of a transmission system are not equal, reflection of
power will occur, such not all signal would be able
to be delivered to the load. Reflections are
eliminated on the transmission line by a matching
network. Impedance matching or sometimes
referred to as tuning is important for many reasons,
among others:
- Maximum power is delivered when the
source is matched to the load [1]
- Match of sensitive receiver components
(antenna, low-noise amplifier, etc.)
improves the signal-to-noise ratio of the
system by improving its noise
performance.
- Impedance matching in digital network
will reduce amplitude and phase errors,
thus contribute to better error vector
magnitude (EVM).
- Stability of amplifier is depending on the
source and load impedance. Power
amplifier works best at matched load and
source impedance
- Reliability of an amplifier is compromised
if there is mismatch between the load and
the source. High reflected power back to
the source from the load will heat up
power amplifier. At the same time,
mismatch in the circuit could make the
amplifier to operate with poor efficiency
which means higher circulating current.
Amplifier in turn will work with higher
junction temperature and thus
compromising long term reliability.
Several types of practical matching networks are
available [2] and the selection is normally based on
what is important for the designer. Factors that may
be important in the selection of a particular
matching network include the following:-
- Complexity - A simpler matching network
is usually cheaper, more reliable, and less
lossy than a more complex design.
- Bandwidth- In many applications, it is
desirable to match a load over a band of
frequencies as modern applications require
a wideband of operation. This will
correspondingly increase design
complexity.
Whilst impedance matching can be tedious and
lengthy process in the past, advance in computer-
aid made the process simpler, faster, and more
accurate. One of the design tools that is available
to a designer is Agilent ADS (Advance design
system). Advance design system offers multiple
tools and features to help designer build match
network.
II. Background
MMZ09332BT1 is a Heterojunction Bipolar
Transistor (InGaP HBT) manufactured by
Freescale Semiconductor. It covers frequency of
operation from 130 to 1000 MHz. Most of the
time, a designer will be supplied with a reference
design that he or she does not need to build a match
circuit at frequency of interest. Normally these
reference designs are available for operation in
popular frequency. In rare cases however,
designer will need to work on non-popular
frequency where such reference design is not
available. This paper will present a method to
build an impedance matching network using
Optimize feature in Agilent ADS simulation
software. In this particular paper, authors
specifically work on Freescale MMZ09332BT1 as
part of a transmitter line up. MMZ09332BT1 is
used as a tune circuit for the transmitter. The
frequency of interest is 220 MHZ until 270 MHZ.
The bandwidth is 50 MHZ; as such the match
network will need to consider a topology that will
allow for wideband of operation.
III. Method
It is very clear from the manufacturer datasheet that
220MHz to 270 MHz is not a popular frequency.
As such both the input and output match network
need to be built independently. Freescale however
make the s-parameter data available to designer.
The authors take the below approach to build the
match network for both input and output of the
device
i. Get the s-parameter data from
manufacturer, extract input and output
impedance
ii. From datasheet, the reference design with
the closest frequency of operation is
picked for reference
iii. Perform optimization using ideal
component
iv. Plot all the paramaters again: S21, S22,
S11
v. Replace ideal components with real
components in simulation
vi. Plot all the paramaters of simulated value
with real components: S21, S22, S11
Fig. 1 is the S2P file that is provided by
manufacturer. It details out the test condition and
measurement reference plane as a guide for
simulation purpose.
Fig. 1: S2P file for MMZ09332BT1
A quick look into the gain performance of the
device is as in Fig. 2 below. The device maximum
available gain is typically at 30.5 dB.
Fig. 2: Device performance across frequency
Fig. 3: S22 and S11 across frequency
The gain of the device is quite close to typical, but
a quick assessment on the small signal gain S21,
shows that it is not at its full potential. The return
loss S11 and S22 (Fig. 3) for both input and output
are poor and this can result in amplifier instability
as well as poor reliability.
From manufacturer s-parameter file, the output and
input impedance information is extracted.
! Copyright-Freescale Semiconductor, Inc., 2015
! 08/24/2015
! Rev.0
! MMZ09332BT1 S-Parameters
! 10 MHz-4 GHz
! VCC1 = VCC2 = VBIAS = 5 Vdc, ICC1Q = 80 mA, ICC2Q = 60 mA
! Measurement Reference Plane: RF pins at edge of package body
!
# hz S ma R 50
! freq magS11 angS11 magS21 angS21 magS12 angS12 magS22 angS22
!
10000000 0.677852185 178.77844
0.0193547003 -96.449257 0.000119438049 80.376389
1.17461159 -32.7024
12493750 0.69197728 178.34561
0.0402415083 -98.440826 0.000469939229 -15.212961
1.24055312 -43.394432
14987500 0.687577474 176.9538
0.0749411236 -104.41002 0.000478690986 -39.428894
1.33472251 -53.772949
17481250 0.685460084 176.89978
0.127804693 -109.608 3.98978506e-005 68.907753
1.42609719 -65.113762
19975000 0.676563392 175.89542
0.198030576 -115.01767 0.000122292029 129.52623
1.4890173 -77.836777
Fig. 4: S2P simulation for MMZ90332BT1
Fig. 5: Extract of impedances from Smith Chart
The input and output impedances at 3 frequencies
are as in Table 1 below
Frequency
(MHz)
220 250 270
Impedance
(ohms)
18.2+j*21.1 22.4+j*24.5 26.4+j*26.9
1(a)
Frequency
(MHz)
220 250 270
Impedance
(ohms)
5.7-j*3.3 5.9-j*2.3 5.9-j*1.8
1(b)
Table 1: (a) Input and (b) Output impedances
The next step is to perform optimization for both
input and output impedance. The configuration of
match network can be in many forms. Agilent
ADS simulation offers at least 2 tools (Wizards) to
synthesise the match network at any impedance;
Smith Chart impedance matching and component
based/PCB impedance matching [2][3][4]. Both of
these methods offer unique control to a designer.
Designer can design for best bandwidth or simplest
network, depending on the desired objective. Very
often, a match network is a trade-off between
bandwidth, loss in network and complexity [2][5].
In the method presented in this paper, designer is
using a rather non-conventional method whereby
match network is synthesized from a known
network based at different band of frequency. This
known network is used as a starting value for
Agilent simulation to start from. From MMZ09332
datasheet, the closest available match network with
a reference design is at 136-174 MHz.
Fig. 6: MMZ09332BT1 match network [6]
Table 2: MMZ09332BT1 match components [6]
The values for input and output match are copied
into Agilent ADS simulation. Simulation is
performed and the result is compared to the
measured result obtained from data sheet. Fig. 7, 8
and 9 below are the performance data according to
datasheet.
Fig. 7: S11 versus Frequency [6]
Fig. 8: S22 versus Frequency [6]
Fig. 9: S21 versus Frequency [6]
Fig. 10: Simulation at 174MHz
Fig. 11: Response with Freescale S-parameters
Result from datasheet (Fig. 7, 8 and 9) and
simulated responses based on s-parameter provided
by manufacturer in Fig. 11 are similar. Peak gain is
at around 150 MHz with S21 of around 33 dB in
both responses. Return loss for both input and
output are also similar in value and response.
The match network circuit from 136 – 174 MHz as
in the datasheet is copied to Agilent ADS and the
values are used as starting value for simulation.
Fig. 12: Simulation at 250MHz
Simulation is set up to run as above (Fig. 12). The
goal is set to a return a loss of less than -30 dB in
both output and input. Simulation return a set of
values and the result obtained as in Fig. 13 below.
Fig. 13: Response versus Frequency with unmatch
(S21) and match (S56) impedance network
Fig. 14: Return loss of unmatch impedance at
i/p(S11) and o/p(S22) as compared to return loss
of match impedance at i/p(S66) and o/p(S55).
Output return loss is about 35 dB better comparing
between before and after match network. Un-
match circuit has about -5dB output return loss
whilst the match circuit has about -40 dB of return
loss. In input, there is an improvement of 22 dB in
return loss. Unmatch circuit is about -8 dB in
return loss whilst circuit with match network is
about -30 dB. The gain of the circuit has also
improved by around 7 dB. The circuit is re-
simulated with actual value made available by
component manufacturer. This is done to ensure the
circuit is still performing as expected when taking
account of stray element in real components.
Fig. 15: Response of ideal compare to real
components
Fig. 16: I/p and o/p return loss of ideal compare to
real components
Simulation above predicts that there is a difference
in performance comparing simulation with ideal
and real components. Degradation in performance
however is acceptable. The simulated value in the
match network is good for PCB fabrication.
IV. Conclusion
Based on the method above, match network for a
particular frequency for a particular device can be
synthesised using known matched network at
different frequency although there is a slight
degradation of performance in simulations when
using real components. Hence Agilent ADS
simulation tool is a useful method to synthesise an
impedance matching network at a particular non-
popular frequency (250MHz) for MMZ09332BT1
based on its known S parameters at closest
frequency range (136-174MHz). This method of
using the same tool can also be explored for
synthesizing match network for other RF devices.
In addition, other advance design sytem simulation
tools with similar capability and features may also
be explored to synthesise and build the impedance
matching networks of RF devices.
REFERENCES
[1] C. Bowick, RF Circuit Design, 1st ed.,
Howard W. Sams & Co. Inc., Indianapolis,
Indiana, USA, 1982.
[2] Vendelin, Pavio and Rohde, Microwave
Circuit Design Using Linear and Nonlinear
Techniques, 2nd
ed., John Wiley & Sons Inc.,
USA, 2005.
[3] Agilent ADS Quick Start 2011.
[4] Smith-Chart Software and Related
Documents.http://www.fritz.dellsperger.net/smi
th.html. Retrieved on 3rd
November, 2020.
[5] Frederick Ray I. Gomez, “Design of
Impedance Matching Networks for RF
Applications,” Asian Journal of Engineering
and Technology (ISSN: 2321 – 2462) Vol. 06 –
Issue 04, September 2018.
[6] Freescale Semiconductor, Technical Data
Doc. Number:MMZ09332B Rev 0, 8/2015.

More Related Content

What's hot (20)

PDF
Antenna basics from-r&s
Saurabh Verma
 
PPTX
AM and FM Transmitters and receivers
KavitaGiri5
 
PPTX
Modulacion pcm
javiervirguez
 
PPTX
Transmission line, single and double matching
Shankar Gangaju
 
PDF
Design and implementation of antenna control servo system for satellite grou
IAEME Publication
 
PPTX
Evolution of mobile radio communication
jadhavmanoj01
 
PDF
Cst studio-suite-2011-brochure-low
Jyoti Electronics/ Jyoti Microsystems Pvt Ltd
 
PPTX
Antenna chapter 1
bewnet
 
PDF
Floor cleaning robot(autonomus mannual) vatsal shah-ec_4th year
Vatsal N Shah
 
PPTX
RF System design concepts
HedayathBashaShaik1
 
PDF
Rectangular patch Antenna
Sulaim Ab Qais
 
PPTX
4G - LTE
Rahul Ghai
 
PPTX
Wireless human health Monitor
Amarendra K Yadav
 
PPTX
Body Area Network
Deepak Chandra Pant
 
DOCX
Project report of designing VCO
vaibhav jindal
 
PPTX
Vivaldi
Pratyusha Mahavadi
 
PPTX
3D Beamforming
Khalid Hussain
 
PDF
Opti x rtn 910950980 hardware description wind
nctgayaranga
 
PPT
Cmos design rule
KOMAL YAMGAR
 
PPTX
Wireless charging of mobilephones
PRADEEP Cheekatla
 
Antenna basics from-r&s
Saurabh Verma
 
AM and FM Transmitters and receivers
KavitaGiri5
 
Modulacion pcm
javiervirguez
 
Transmission line, single and double matching
Shankar Gangaju
 
Design and implementation of antenna control servo system for satellite grou
IAEME Publication
 
Evolution of mobile radio communication
jadhavmanoj01
 
Cst studio-suite-2011-brochure-low
Jyoti Electronics/ Jyoti Microsystems Pvt Ltd
 
Antenna chapter 1
bewnet
 
Floor cleaning robot(autonomus mannual) vatsal shah-ec_4th year
Vatsal N Shah
 
RF System design concepts
HedayathBashaShaik1
 
Rectangular patch Antenna
Sulaim Ab Qais
 
4G - LTE
Rahul Ghai
 
Wireless human health Monitor
Amarendra K Yadav
 
Body Area Network
Deepak Chandra Pant
 
Project report of designing VCO
vaibhav jindal
 
3D Beamforming
Khalid Hussain
 
Opti x rtn 910950980 hardware description wind
nctgayaranga
 
Cmos design rule
KOMAL YAMGAR
 
Wireless charging of mobilephones
PRADEEP Cheekatla
 

Similar to Building impedance matching network based on s parameter from manufacturer (20)

PDF
Low Noise Amplifier at 2 GHz using the transistor NE85639 in ADS
Karthik Rathinavel
 
PDF
Modeling of a Microwave Amplifier Operating around 11 GHz for Radar Applicati...
IJECEIAES
 
PDF
LowNoiseAmplifierReport
Syed Kazmi
 
PPTX
Design Basics on Power Amplifiers
ls234
 
PPTX
Impedanc matching
mohammedali1249
 
PPTX
Network analysis of rf and microwave circuits
Shankar Gangaju
 
PDF
Mk2420552059
IJERA Editor
 
PDF
E05322730
IOSR-JEN
 
PDF
Design and Fabrication of S-Band MIC Power Amplifier
ijcisjournal
 
DOCX
1.9 GHz Low Noise Amplifier
Xavier Edokpa
 
PDF
Design of L-S band broadband power amplifier using microstip lines
IJECEIAES
 
PDF
Use s parameters-determining_inductance_capacitance
Pei-Che Chang
 
PDF
Bh31403408
IJERA Editor
 
PPTX
Concurrent Triple Band Low Noise Amplifier Design
Halil Kayıhan
 
PDF
The design & simulation of low noise amplifier for 1 2.8 ghz using aln s...
eSAT Journals
 
PDF
Cw35552557
IJERA Editor
 
PDF
Differential Amplifiers in Bioimpedance Measurement Systems: A Comparison Bas...
IDES Editor
 
PPTX
Zuken - Gigabit LVDS Signaling on a PCB assisted by Simulation and S-Paramete...
Zuken
 
PDF
S_parameters.pdf
ManishKumawat77
 
PDF
Pcb carolina scg_2010
tcoyle72
 
Low Noise Amplifier at 2 GHz using the transistor NE85639 in ADS
Karthik Rathinavel
 
Modeling of a Microwave Amplifier Operating around 11 GHz for Radar Applicati...
IJECEIAES
 
LowNoiseAmplifierReport
Syed Kazmi
 
Design Basics on Power Amplifiers
ls234
 
Impedanc matching
mohammedali1249
 
Network analysis of rf and microwave circuits
Shankar Gangaju
 
Mk2420552059
IJERA Editor
 
E05322730
IOSR-JEN
 
Design and Fabrication of S-Band MIC Power Amplifier
ijcisjournal
 
1.9 GHz Low Noise Amplifier
Xavier Edokpa
 
Design of L-S band broadband power amplifier using microstip lines
IJECEIAES
 
Use s parameters-determining_inductance_capacitance
Pei-Che Chang
 
Bh31403408
IJERA Editor
 
Concurrent Triple Band Low Noise Amplifier Design
Halil Kayıhan
 
The design & simulation of low noise amplifier for 1 2.8 ghz using aln s...
eSAT Journals
 
Cw35552557
IJERA Editor
 
Differential Amplifiers in Bioimpedance Measurement Systems: A Comparison Bas...
IDES Editor
 
Zuken - Gigabit LVDS Signaling on a PCB assisted by Simulation and S-Paramete...
Zuken
 
S_parameters.pdf
ManishKumawat77
 
Pcb carolina scg_2010
tcoyle72
 
Ad

More from Journal Papers (20)

PDF
Experiences in shift left test approach
Journal Papers
 
PDF
Graphene field effect transistor simulation with tcad on top-gate dielectric ...
Journal Papers
 
PDF
Electrochemically reduced graphene oxide (ergo) as humidity sensor effect o...
Journal Papers
 
PDF
Electrical bistabilities behaviour of all solution-processed non-volatile mem...
Journal Papers
 
PDF
Electrical transportation mechanisms of molybdenum disulfide flakes graphene ...
Journal Papers
 
PDF
A real time aggressive human behaviour detection system in cage environment a...
Journal Papers
 
PDF
A numerical analysis of various p h level for fiber optic ph sensor based on ...
Journal Papers
 
PDF
A novel character segmentation reconstruction approach for license plate reco...
Journal Papers
 
PDF
A hybrid model based on constraint oselm, adaptive weighted src and knn for l...
Journal Papers
 
PDF
Wafer scale fabrication of nitrogen-doped reduced graphene oxide with enhance...
Journal Papers
 
PDF
Ultrasonic atomization of graphene derivatives for heat spreader thin film de...
Journal Papers
 
PDF
Towards formulating dynamic model for predicting defects in system testing us...
Journal Papers
 
PDF
Test case prioritization using firefly algorithm for software testing
Journal Papers
 
PDF
Preliminary study of poly (tetrahydrofurturyl acrylate) thin film as a potent...
Journal Papers
 
PDF
New weight function for adapting handover margin level over contiguous carrie...
Journal Papers
 
PDF
Implementation of embedded real time monitoring temperature and humidity system
Journal Papers
 
PDF
High voltage graphene nanowall trench mos barrier schottky diode characteriza...
Journal Papers
 
PDF
High precision location tracking technology in ir4.0
Journal Papers
 
PDF
Positive developments but challenges still ahead a survey study on ux profe...
Journal Papers
 
PDF
Modeling of dirac voltage for highly p doped graphene field effect transistor...
Journal Papers
 
Experiences in shift left test approach
Journal Papers
 
Graphene field effect transistor simulation with tcad on top-gate dielectric ...
Journal Papers
 
Electrochemically reduced graphene oxide (ergo) as humidity sensor effect o...
Journal Papers
 
Electrical bistabilities behaviour of all solution-processed non-volatile mem...
Journal Papers
 
Electrical transportation mechanisms of molybdenum disulfide flakes graphene ...
Journal Papers
 
A real time aggressive human behaviour detection system in cage environment a...
Journal Papers
 
A numerical analysis of various p h level for fiber optic ph sensor based on ...
Journal Papers
 
A novel character segmentation reconstruction approach for license plate reco...
Journal Papers
 
A hybrid model based on constraint oselm, adaptive weighted src and knn for l...
Journal Papers
 
Wafer scale fabrication of nitrogen-doped reduced graphene oxide with enhance...
Journal Papers
 
Ultrasonic atomization of graphene derivatives for heat spreader thin film de...
Journal Papers
 
Towards formulating dynamic model for predicting defects in system testing us...
Journal Papers
 
Test case prioritization using firefly algorithm for software testing
Journal Papers
 
Preliminary study of poly (tetrahydrofurturyl acrylate) thin film as a potent...
Journal Papers
 
New weight function for adapting handover margin level over contiguous carrie...
Journal Papers
 
Implementation of embedded real time monitoring temperature and humidity system
Journal Papers
 
High voltage graphene nanowall trench mos barrier schottky diode characteriza...
Journal Papers
 
High precision location tracking technology in ir4.0
Journal Papers
 
Positive developments but challenges still ahead a survey study on ux profe...
Journal Papers
 
Modeling of dirac voltage for highly p doped graphene field effect transistor...
Journal Papers
 
Ad

Recently uploaded (20)

PPTX
Applied-Statistics-Mastering-Data-Driven-Decisions.pptx
parmaryashparmaryash
 
PDF
Google I/O Extended 2025 Baku - all ppts
HusseinMalikMammadli
 
PPTX
IT Runs Better with ThousandEyes AI-driven Assurance
ThousandEyes
 
PDF
The Future of Artificial Intelligence (AI)
Mukul
 
PDF
Economic Impact of Data Centres to the Malaysian Economy
flintglobalapac
 
PDF
Make GenAI investments go further with the Dell AI Factory
Principled Technologies
 
PDF
MASTERDECK GRAPHSUMMIT SYDNEY (Public).pdf
Neo4j
 
PDF
Market Insight : ETH Dominance Returns
CIFDAQ
 
PPTX
What-is-the-World-Wide-Web -- Introduction
tonifi9488
 
PPTX
Agentic AI in Healthcare Driving the Next Wave of Digital Transformation
danielle hunter
 
PDF
How ETL Control Logic Keeps Your Pipelines Safe and Reliable.pdf
Stryv Solutions Pvt. Ltd.
 
PDF
Researching The Best Chat SDK Providers in 2025
Ray Fields
 
PDF
AI Unleashed - Shaping the Future -Starting Today - AIOUG Yatra 2025 - For Co...
Sandesh Rao
 
PPTX
Dev Dives: Automate, test, and deploy in one place—with Unified Developer Exp...
AndreeaTom
 
PDF
State-Dependent Conformal Perception Bounds for Neuro-Symbolic Verification
Ivan Ruchkin
 
PDF
Trying to figure out MCP by actually building an app from scratch with open s...
Julien SIMON
 
PDF
Per Axbom: The spectacular lies of maps
Nexer Digital
 
PDF
Presentation about Hardware and Software in Computer
snehamodhawadiya
 
PDF
How Open Source Changed My Career by abdelrahman ismail
a0m0rajab1
 
PPTX
Agile Chennai 18-19 July 2025 | Workshop - Enhancing Agile Collaboration with...
AgileNetwork
 
Applied-Statistics-Mastering-Data-Driven-Decisions.pptx
parmaryashparmaryash
 
Google I/O Extended 2025 Baku - all ppts
HusseinMalikMammadli
 
IT Runs Better with ThousandEyes AI-driven Assurance
ThousandEyes
 
The Future of Artificial Intelligence (AI)
Mukul
 
Economic Impact of Data Centres to the Malaysian Economy
flintglobalapac
 
Make GenAI investments go further with the Dell AI Factory
Principled Technologies
 
MASTERDECK GRAPHSUMMIT SYDNEY (Public).pdf
Neo4j
 
Market Insight : ETH Dominance Returns
CIFDAQ
 
What-is-the-World-Wide-Web -- Introduction
tonifi9488
 
Agentic AI in Healthcare Driving the Next Wave of Digital Transformation
danielle hunter
 
How ETL Control Logic Keeps Your Pipelines Safe and Reliable.pdf
Stryv Solutions Pvt. Ltd.
 
Researching The Best Chat SDK Providers in 2025
Ray Fields
 
AI Unleashed - Shaping the Future -Starting Today - AIOUG Yatra 2025 - For Co...
Sandesh Rao
 
Dev Dives: Automate, test, and deploy in one place—with Unified Developer Exp...
AndreeaTom
 
State-Dependent Conformal Perception Bounds for Neuro-Symbolic Verification
Ivan Ruchkin
 
Trying to figure out MCP by actually building an app from scratch with open s...
Julien SIMON
 
Per Axbom: The spectacular lies of maps
Nexer Digital
 
Presentation about Hardware and Software in Computer
snehamodhawadiya
 
How Open Source Changed My Career by abdelrahman ismail
a0m0rajab1
 
Agile Chennai 18-19 July 2025 | Workshop - Enhancing Agile Collaboration with...
AgileNetwork
 

Building impedance matching network based on s parameter from manufacturer

  • 1. Building Impedance Matching network based on S-Parameter from manufacturer Aizuddin Nuruddin, Tengku Azhar, Zharfan Hamdan, Khairom Nizam Mohamed, Ahmad Redzman Wireless, Photonics and System Technology, MIMOS Berhad. Technology Park Malaysia 57000 Bukit Jalil Kuala Lumpur Email – [email protected] Abstract: To maximise power transfer in a radio frequency (RF) system, impedance matching is necessary. Advance design tools such as those available in Agilent Advance Design Software (ADS) has greatly made the impedance matching process simpler, faster, and more accurate. In the absence of a reference design at a particular non-popular frequency range, the Optimize feature in ADS may be useful to build the impedance matching network. This paper describes the method of using this feature to synthesise the impedance matching network for the above mentioned frequency for the MMZ09332BT1 from Freescale, using ideal and real components based on the original s- parameters provided by the manufacturer. Index Term- Matching network, s-parameters. I. Introduction Impedance matching is often a part of the larger design process for a radio frequency (RF) system. Impedance matching is a network placed between a load and source. Matching network is required to make the impedance seen looking into the matching network to be equivalent with the characteristic impedance of the network, Zo. If the source impedance, Zs, and the load impedance, ZL, of a transmission system are not equal, reflection of power will occur, such not all signal would be able to be delivered to the load. Reflections are eliminated on the transmission line by a matching network. Impedance matching or sometimes referred to as tuning is important for many reasons, among others: - Maximum power is delivered when the source is matched to the load [1] - Match of sensitive receiver components (antenna, low-noise amplifier, etc.) improves the signal-to-noise ratio of the system by improving its noise performance. - Impedance matching in digital network will reduce amplitude and phase errors, thus contribute to better error vector magnitude (EVM). - Stability of amplifier is depending on the source and load impedance. Power amplifier works best at matched load and source impedance - Reliability of an amplifier is compromised if there is mismatch between the load and the source. High reflected power back to the source from the load will heat up power amplifier. At the same time, mismatch in the circuit could make the amplifier to operate with poor efficiency which means higher circulating current. Amplifier in turn will work with higher junction temperature and thus compromising long term reliability. Several types of practical matching networks are available [2] and the selection is normally based on what is important for the designer. Factors that may be important in the selection of a particular matching network include the following:- - Complexity - A simpler matching network is usually cheaper, more reliable, and less lossy than a more complex design. - Bandwidth- In many applications, it is desirable to match a load over a band of frequencies as modern applications require a wideband of operation. This will correspondingly increase design complexity. Whilst impedance matching can be tedious and lengthy process in the past, advance in computer- aid made the process simpler, faster, and more accurate. One of the design tools that is available to a designer is Agilent ADS (Advance design system). Advance design system offers multiple tools and features to help designer build match network. II. Background MMZ09332BT1 is a Heterojunction Bipolar Transistor (InGaP HBT) manufactured by Freescale Semiconductor. It covers frequency of operation from 130 to 1000 MHz. Most of the time, a designer will be supplied with a reference
  • 2. design that he or she does not need to build a match circuit at frequency of interest. Normally these reference designs are available for operation in popular frequency. In rare cases however, designer will need to work on non-popular frequency where such reference design is not available. This paper will present a method to build an impedance matching network using Optimize feature in Agilent ADS simulation software. In this particular paper, authors specifically work on Freescale MMZ09332BT1 as part of a transmitter line up. MMZ09332BT1 is used as a tune circuit for the transmitter. The frequency of interest is 220 MHZ until 270 MHZ. The bandwidth is 50 MHZ; as such the match network will need to consider a topology that will allow for wideband of operation. III. Method It is very clear from the manufacturer datasheet that 220MHz to 270 MHz is not a popular frequency. As such both the input and output match network need to be built independently. Freescale however make the s-parameter data available to designer. The authors take the below approach to build the match network for both input and output of the device i. Get the s-parameter data from manufacturer, extract input and output impedance ii. From datasheet, the reference design with the closest frequency of operation is picked for reference iii. Perform optimization using ideal component iv. Plot all the paramaters again: S21, S22, S11 v. Replace ideal components with real components in simulation vi. Plot all the paramaters of simulated value with real components: S21, S22, S11 Fig. 1 is the S2P file that is provided by manufacturer. It details out the test condition and measurement reference plane as a guide for simulation purpose. Fig. 1: S2P file for MMZ09332BT1 A quick look into the gain performance of the device is as in Fig. 2 below. The device maximum available gain is typically at 30.5 dB. Fig. 2: Device performance across frequency Fig. 3: S22 and S11 across frequency The gain of the device is quite close to typical, but a quick assessment on the small signal gain S21, shows that it is not at its full potential. The return loss S11 and S22 (Fig. 3) for both input and output are poor and this can result in amplifier instability as well as poor reliability. From manufacturer s-parameter file, the output and input impedance information is extracted. ! Copyright-Freescale Semiconductor, Inc., 2015 ! 08/24/2015 ! Rev.0 ! MMZ09332BT1 S-Parameters ! 10 MHz-4 GHz ! VCC1 = VCC2 = VBIAS = 5 Vdc, ICC1Q = 80 mA, ICC2Q = 60 mA ! Measurement Reference Plane: RF pins at edge of package body ! # hz S ma R 50 ! freq magS11 angS11 magS21 angS21 magS12 angS12 magS22 angS22 ! 10000000 0.677852185 178.77844 0.0193547003 -96.449257 0.000119438049 80.376389 1.17461159 -32.7024 12493750 0.69197728 178.34561 0.0402415083 -98.440826 0.000469939229 -15.212961 1.24055312 -43.394432 14987500 0.687577474 176.9538 0.0749411236 -104.41002 0.000478690986 -39.428894 1.33472251 -53.772949 17481250 0.685460084 176.89978 0.127804693 -109.608 3.98978506e-005 68.907753 1.42609719 -65.113762 19975000 0.676563392 175.89542 0.198030576 -115.01767 0.000122292029 129.52623 1.4890173 -77.836777
  • 3. Fig. 4: S2P simulation for MMZ90332BT1 Fig. 5: Extract of impedances from Smith Chart The input and output impedances at 3 frequencies are as in Table 1 below Frequency (MHz) 220 250 270 Impedance (ohms) 18.2+j*21.1 22.4+j*24.5 26.4+j*26.9 1(a) Frequency (MHz) 220 250 270 Impedance (ohms) 5.7-j*3.3 5.9-j*2.3 5.9-j*1.8 1(b) Table 1: (a) Input and (b) Output impedances The next step is to perform optimization for both input and output impedance. The configuration of match network can be in many forms. Agilent ADS simulation offers at least 2 tools (Wizards) to synthesise the match network at any impedance; Smith Chart impedance matching and component based/PCB impedance matching [2][3][4]. Both of these methods offer unique control to a designer. Designer can design for best bandwidth or simplest network, depending on the desired objective. Very often, a match network is a trade-off between bandwidth, loss in network and complexity [2][5]. In the method presented in this paper, designer is using a rather non-conventional method whereby match network is synthesized from a known network based at different band of frequency. This known network is used as a starting value for Agilent simulation to start from. From MMZ09332 datasheet, the closest available match network with a reference design is at 136-174 MHz. Fig. 6: MMZ09332BT1 match network [6] Table 2: MMZ09332BT1 match components [6] The values for input and output match are copied into Agilent ADS simulation. Simulation is performed and the result is compared to the measured result obtained from data sheet. Fig. 7, 8 and 9 below are the performance data according to datasheet. Fig. 7: S11 versus Frequency [6]
  • 4. Fig. 8: S22 versus Frequency [6] Fig. 9: S21 versus Frequency [6] Fig. 10: Simulation at 174MHz Fig. 11: Response with Freescale S-parameters Result from datasheet (Fig. 7, 8 and 9) and simulated responses based on s-parameter provided by manufacturer in Fig. 11 are similar. Peak gain is at around 150 MHz with S21 of around 33 dB in both responses. Return loss for both input and output are also similar in value and response. The match network circuit from 136 – 174 MHz as in the datasheet is copied to Agilent ADS and the values are used as starting value for simulation. Fig. 12: Simulation at 250MHz
  • 5. Simulation is set up to run as above (Fig. 12). The goal is set to a return a loss of less than -30 dB in both output and input. Simulation return a set of values and the result obtained as in Fig. 13 below. Fig. 13: Response versus Frequency with unmatch (S21) and match (S56) impedance network Fig. 14: Return loss of unmatch impedance at i/p(S11) and o/p(S22) as compared to return loss of match impedance at i/p(S66) and o/p(S55). Output return loss is about 35 dB better comparing between before and after match network. Un- match circuit has about -5dB output return loss whilst the match circuit has about -40 dB of return loss. In input, there is an improvement of 22 dB in return loss. Unmatch circuit is about -8 dB in return loss whilst circuit with match network is about -30 dB. The gain of the circuit has also improved by around 7 dB. The circuit is re- simulated with actual value made available by component manufacturer. This is done to ensure the circuit is still performing as expected when taking account of stray element in real components. Fig. 15: Response of ideal compare to real components Fig. 16: I/p and o/p return loss of ideal compare to real components Simulation above predicts that there is a difference in performance comparing simulation with ideal and real components. Degradation in performance however is acceptable. The simulated value in the match network is good for PCB fabrication. IV. Conclusion Based on the method above, match network for a particular frequency for a particular device can be synthesised using known matched network at different frequency although there is a slight degradation of performance in simulations when using real components. Hence Agilent ADS simulation tool is a useful method to synthesise an impedance matching network at a particular non- popular frequency (250MHz) for MMZ09332BT1 based on its known S parameters at closest frequency range (136-174MHz). This method of using the same tool can also be explored for synthesizing match network for other RF devices. In addition, other advance design sytem simulation tools with similar capability and features may also be explored to synthesise and build the impedance matching networks of RF devices.
  • 6. REFERENCES [1] C. Bowick, RF Circuit Design, 1st ed., Howard W. Sams & Co. Inc., Indianapolis, Indiana, USA, 1982. [2] Vendelin, Pavio and Rohde, Microwave Circuit Design Using Linear and Nonlinear Techniques, 2nd ed., John Wiley & Sons Inc., USA, 2005. [3] Agilent ADS Quick Start 2011. [4] Smith-Chart Software and Related Documents.http://www.fritz.dellsperger.net/smi th.html. Retrieved on 3rd November, 2020. [5] Frederick Ray I. Gomez, “Design of Impedance Matching Networks for RF Applications,” Asian Journal of Engineering and Technology (ISSN: 2321 – 2462) Vol. 06 – Issue 04, September 2018. [6] Freescale Semiconductor, Technical Data Doc. Number:MMZ09332B Rev 0, 8/2015.