Impact of gamma-ray irradiation on dynamic characteristics of Si and SiC power MOSFETs

International Journal of Electrical and Computer Engineering (IJECE)
Vol. 9, No. 2, April 2019, pp. 1453∼ 1460
ISSN: 2088-8708, DOI: 10.11591/ijece.v9i2.pp1453-1460 1453
Impact of gamma-ray irradiation on dynamic characteristics
of Si and SiC power MOSFETs
Saranya Krishnamurthy1
, Ramani Kannan2
, Chay Che Kiong3
, Taib B Ibrahim4
, and Yusof Abdullah5
1,2,3,4
Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS, Malaysia
5
Material Technology Group, Malaysian Nuclear Agency, Malaysia
Article Info
Article history:
Received Jun 28, 2018
Revised Des 18, 2018
Accepted Des 29, 2018
Keywords:
Power MOSFET
Total ionizing dose effects
Radiation response
Electrical characterization
Gamma ray
ABSTRACT
Power electronic devices in spacecraft and military applications requires high radiation
tolerant. The semiconductor devices face the issue of device degradation due to their
sensitivity to radiation. Power MOSFET is one of the primary components of these
power electronic devices because of its capabilities of fast switching speed and low
power consumption. These abilities are challenged by ionizing radiation which damages
the devices by inducing charge built-up in the sensitive oxide layer of power MOSFET.
Radiations degrade the oxides in a power MOSFET through Total Ionization Dose effect
mechanism that creates defects by generation of excessive electron–hole pairs causing
electrical characteristics shifts. This study investigates the impact of gamma ray irra-
diation on dynamic characteristics of silicon and silicon carbide power MOSFET. The
switching speed is limit at the higher doses due to the increase capacitance in power
MOSFETs. Thus, the power circuit may operate improper due to the switching speed
has changed by increasing or decreasing capacitances in power MOSFETs. These de-
fects are obtained due to the penetration of Cobalt60 gamma ray dose level from 50krad
to 600krad. The irradiated devices were evaluated through its shifts in the capacitance-
voltage characteristics, results were analyzed and plotted for the both silicon and silicon
carbide power MOSFET.
Copyright c 2019 Institute of Advanced Engineering and Science.
All rights reserved.
Corresponding Author:
Ramani Kannan,
Department of Electrical and Electronic Engineering,
Universiti Teknologi PETRONAS,
32610 Seri Iskandar, Perak, Malaysia.
Email: ramani.kannan@utp.edu.my
1. INTRODUCTION
Power Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) play a signiﬁcant role in space,
power plant, military and harsh environment applications [1], [2]. Semiconductor devices present in radiation
harsh environment would be exposed to different types of radiations which lead to malfunctions of the devices
[3]. The space radiation environment is mainly classiﬁed into particle and proton radiation. The radiation effects
of power MOSFETs mainly includes ionizing radiation and single event effects [4], [5]. Power MOSFET exposed
to ionizing radiation cause an accumulation of charges in interface and gate oxide layer, thereby degrading the
performance of devices. Assessing the radiation hardness of a device with one radiation on the ground and
anticipating its reaction to a diverse radiation in space could be a intricate task. In this way, it is exceptionally
fundamental to assess the radiation hardness of a device to diverse radiations from the application perspective.
Several studies have shown the changes in static electrical characteristics of commercially available
silicon (Si) and silicon carbide (SiC) power MOSFET under radiation [6], [7]. The results show that the ionizing
total dose damage of power MOSFETs mainly appears as changes in I-V characteristics, especially the decrease
of threshold voltage and the increase of current drive [8]. Neutron irradiation can cause functional failure of the
Journal Homepage: http://iaescore.com/journals/index.php/IJECE

1454 ISSN: 2088-8708
commercial grade SiC power MOSFETs devices, mainly due to the ionizing effect caused by the recoil nucleus
the obtained from collision of the neutron and the lattice atoms so to make the devices fail [9]. The results
of heavy ion and proton radiation test report that the permanent damage caused by ion irradiation at high LET
values will lead to increase in the gate and source leakage of the device. The study [10], [11] demonstrated
that the safe working voltage of the device was significantly reduced and the current was attenuated after the
heavy ion irradiation test on SiC power MOSFETs of 1200 V. The decrease of safe working voltage will directly
affect the device’s reliability index as well as the device’s space applications. Akturk et al. detailed that SiC
MOSFETs irradiated with gamma-rays under gate voltage biasing condition showed the negative voltage shift in
threshold voltage (Vth),though in their examinations the aggregate measurement of gamma-ray dose level was
limited to kGy [12]. The investigation of threshold voltage shift and drain current degradation was conducted for
both N-channel and P-channel Si MOSFET subjected to electron beam radiation and gamma ray irradiation [13],
[14]. However, it is necessary to consider the dynamic electrical characteristics on power MOSFETs during the
total ionizing radiation. Therefore, this work aims to investigate the capacitance voltage shifts of commercial Si
(TOSHIBA 2SK2662) and SiC (ROHM SCT2H12NZ and SCT3160KL) power MOSFETs subjected to radiation
by analysing its C-V characteristics before and after cobalt-60 gamma ray radiation.
In this study, the relation between variable drain voltage and gamma-ray irradiation response of Si and
SiC power MOSFETs was investigated by applying a constant or variable bias to gate terminal.The experiments
indicate that Si and SiC MOSFETs operate within specification up to 100 krad, and may reliably operate after
receiving doses up to 300 krad, provided that a gate bias of 0V, which is specified as the lowest recommended
gate bias in the datasheet, is used to turn off the power MOSFET. In addition it clears that SiC power MOSFET
capacitance value changes is less compared to silicon power MOSFET. Furthermore, experiments indicate that the
switching applications such as buck and boost converters will be more affected due to increases and decreases in
interface state densities and device capacitances such as output (Coss), input (Ciss) and reverse transfer (Crss)
capacitances, than changes in threshold voltage and device current drive.
The remaining part of the article is structured as follows, Section 2. presents the theoretical concepts of
radiation effects on power MOSFET. Section 3. details the experimental test set-up for the investigation of dy-
namic characteristics due to gamma ray irradiation, Section 4. discuss about the results and comparative analysis,
Section 5. provides Conclusion.
2. RADIATION EFFECTS ON POWER MOSFET
Power MOSFET is a three terminal device Gate (G), Source (S) and Drain (D), which used in DC-DC
converter, power amplifier and switching electronic signals. In addition, Power MOSFET is a superior switching
speed with very low current required to turn on gate drive, due to the rate of charge removed or supplied from
capacitance. In high voltage power MOSFET, only electrons are flowing during forward conduction. This is the
reason that it can switching fast at high switching frequency with low switching loss. Many studies have been
carried out to investigate the radiation effects on silicon based power MOSFET. SiC replaces a silicon material due
to their realistic advantages such as wide band gap, high critical field and high thermal conductivity. 4H-polytype
SiC material is most promising semiconductor for power MOSFETs compared to other polytypes 6H-SiC and
3H-SiC. The SiC power MOSFETs reduces the specific on-resistance, which are more suitable for high voltage,
high temperature and harsh radiation environment. The design process used for SiC power MOSFETs as similar
as silicon power MOSFETs [15].
Radiation is a transmission and emission of energy that travel in a form of particles or waves through
space or material. The radiation is categorized as ionizing and non-ionizing radiation based on the type of particle.
The ionizing radiation induced the ionization mechanism in the device which tends to device degradation and
performance failure by changing the electrical characteristics. During the radiation exposure, the highly charged
particle such as electrons, protons and gamma rays passing through the oxide layer that ionize atom to creates
the electron-hole pairs in the power MOSFET. The generated electrons are much more mobile than the holes
and they will move out of the oxide in a very fast times. However, some electrons and holes that escape initial
recombination and they are immobile and remain behind in oxide. Trapped charge at the SiO2/ Si interface
induces an inversion layer during the off-state that is responsible for increasing leakage current and threshold
voltage shifts. The ionizing radiation of the space environment mainly causes Total Ionizing Dose (TID) [16].
The cumulative effect of ionizing radiation is referred as TID. Dose is defined as the quantitative mea-
sure of accumulated energy absorbed from ionizing radiation per unit mass as given in equations (1).
IJECE Vol. 9, No. 2, April 2019 : 1453 – 1460

IJECE ISSN: 2088-8708 1455
d = φ
1
ρ
dE
dx
(1)
where, d is the dose, φ is the flux of incident particles. The SI unit for radiation dose is the radiation
absorbed dose (rad) or Gray [Gy] i.e.1 Gy = 100 rad. The units are material-specific, it consists of accumulation
of charges over time in different materials such as silicon or silicon carbide.
The SiC power is the leading high voltage technology in current market and there are number of research
on going for analysis of radiation hardness. There is compulsion to investigate impact on dynamic characteristics
of Si and SiC power MOSFET during radiation for using in space applications. Hence in this work the investiga-
tion of gamma ray irradiation on silicon carbide power MOSFETs by measuring the capacitance-voltage (C-V)
characteristic as a function of drain-source voltage and radiation dose level and also compared with silicon power
MOSFET.
3. EXPERIMENTAL TEST SET-UP FOR ANALYSIS OF RADIATION EFFECTS
The goal of this experiment is to investigate and analysis the cobalt-60 gamma ray effects on the dy-
namic characteristics of both Si and SiC power MOSFETs. Commercially available Si (TOSHIBA 2SK2662)
and SiC (ROHM SCT2H12NZ and SCT3160KL) power MOSFETS were investigated and compared. The power
MOSFETs details are collected from the data sheet. A sample size of five devices for each radiation level in
total twenty devices used for this experiment. First, the capacitances including output capacitance (Coss), input
capacitance (Ciss) and reverse transfer capacitance (Crss) were characterized prior to the radiation exposure
by varying the Drain-Current Voltage (V ds) in the Electrical characterization laboratory at University Teknologi
PETRONAS, Malaysia. The capacitances of power MOSFET calculated by using equation, as in (1).
Ciss = Cgs + Cgd
Coss = Cds + Cgd
Crss = Cgd
(2)
where the Cgs, Cds and Cgs are gate-to-source, drain-to-source and gate-to-drain respectively. Next,
the cobalt-60 gamma ray irradiations were performed at Agency Nuclear Malaysia, Bangi for a dose level of
50krad to 600krad. The devices are measured at pre-rad, 50krad, 100krad, 300krad and 600krad for variable bias
condition using Agilent E4980A LCR meter. To achieve the analysis of radiation effects on dynamic character-
istics of power MOSFET, Funaki et al method is used to measure the inter electrode capacitance values. In this
method the LCR meter with external power source and simple circuit configuration to measure the capacitance
value. However, the LCR meter has a limited of up to 40V for V ds biasing. Hence, the circuit is connected to the
extra high voltage source with resistance and dc-blocking capacitance in order to measure the capacitance of the
higher voltage in V ds. A schematic of the test circuit for different capacitance measurement is shown in Figure
1. To achieve accurate measurement value of the internal capacitance different electrical test schematic circuits
were used in this experiment.
AC V Vm
A Im
Blocking
Capacitor
LCR Meter
AC
signal
source
Im2
Im1
DC
External DC
source
DC
AC V Vm
A Im
External
DC source
Blocking
Capacitor
LCR Meter
AC
signal
source
Im2
Im1
DC
AC V
Vm
A
Im
External DC
source
Blocking
Capacitor
LCR Meter
AC
signal
source
Im1
Im2
a)
b)
c)
Figure 1. Experiment electrical schematic for a) Ciss, b) Coss and c) Crss measurement
Impact of gamma-ray irradiation on dynamic... (Saranya Krishnamurthy)

1456 ISSN: 2088-8708
4. RESULT AND ANALYSIS
Previous related studies have shown that after gamma irradiation, the power MOSFET threshold voltage
(V th) shifts negative and the drain current (Ids) was increased. However, the changes in dynamic electrical
characteristics are neglected, yet the internal capacitances are introduce leakage current effects. Therefore, the
analysis of capacitance voltage curves as a function of radiation dose is necessary to reflect reliable circuit opera-
tion. The measurement includes input (Ciss), output (Coss) and reverse transfer (Crss) capacitances of both Si
and SiC power MOSFETs. Table 1 shows the result of total ionizing dose dependent changes in leakage charac-
teristics of Si and SiC MOSFETs irradiated at room temperature. Here the power MOSFETs capacitance-voltage
characteristics measured at V gs = 0V and V ds changes from 0 to 30 V for before and after 50krad, 100krad, 300
krad and 600 krad.
The measured capacitances are related to the terminal capacitances of power MOSFET, refer (2). Ac-
cording to the formula Cgd is the key of these capacitances its depends on equation (3),
Cgd =
Cox × (Cinv + Cdp)
Cox + (Cinv + Cdp)
(3)
where, Cdp is a depletion capacitance which is inversely proportional to the depletion width of MOS-
FETs neck region under the oxide layer, Cox is a oxide capacitance and Cinv is an inversion capacitance. During
off state and low V ds, the threshold voltage increase Cinv due to the radiation and this gives rise to larger Cgd.
The increased capacitance as a function of low V ds and lateral shift during high drain-source voltage for pre and
post radiation plotted in Figure 4. In expansion to the change in Cgd, the measurements subordinate changes
in Coss and Ciss moreover incorporate the changes in Cds and Cgs, separately. Primarily, the gate-source
capacitance Cgs is included fringe capacitance between gate and source, overlap, depletion, oxide and interface
trap capacitances. Especially, the interface trap capacitance will change due to changing interface trap levels.
Moreover, the drain-source capacitance Cds will change less with gamma irradiation it also includes the power
MOSFET structure junction capacitance. Figure 2 shows input capacitances (Ciss) of Si and SiC power MOS-
FETs as a function of V ds and dose level.
Hence, the result clear that the shifts in capacitances Ciss, Coss, and Crss due to radiation dose level
is primarily due to the variations in Cgd. Whereas in the case at 300 krad and 600krad, the dose dependent shift
of Crss and Coss are considerably larger than pre radiation but contrariwise Ciss is decreases than pre radiation.
The Coss of Si MOSFETs have increased 25.9% at 600krad and 2.6% at 300krad for 0 to 30V after irradiation
compared to the pre radiation which is shown in Figure 3. In addition, Crss of Si MOSFETs have a significant
increment which is more than 26.17% at 300krad while at 600krad the increment is more than 6% from 0 to 30V.
In the Ciss measurement of Si MOSFETs, which is up to 5.61% at 600krad but at 300krad the decrement is up
to 6.5% from 0 to 30V .This is because the Ciss determines driving condition while Crss and Coss are dictated
switching speed. Hence, the Coss is the key factor component of switching loss to affect the power loss due to
the discharging and charging in switching mode. In addition, the Crss and Coss have voltage dependency due to
the device depletion region modulating with applied varying operating voltage.
The capacitance of Rohm SiC 1200V and Rohm SiC 1700V power MOSFETs have a significant influent
by the radiation at 300krad and 600krad. The Coss of Rohm SiC 1200V has decrease up to 17.36% at 600krad
while at 300krad the decrement is up to 45.47% from 0 to 30V whereas it slightly increase after 30V at 600krad
compared to preradiation. However, the Coss of Rohm SiC 1700V has increased significantly which is up to 50%
at 600krad while at 300krad the increment is up to 48% from 0 to 30V. In addition, the Crss of Rohm SiC 1200V
has increased up to 24.5% at 600krad while at 300krad has significant increased and slightly decrease at 300krad
from 0 to 30V. However, the Crss of Rohm SiC 1700V has significant increased which is up to and around 80%
at 300krad and 600krad. Also, the Ciss of Rohm SiC 1200V and Rohm SiC 1700V have decrement trends after
irradiation gamma-ray. Rohm SiC 1200V has small decreased up to 7.85% whereas the Rohm SiC 1700V has
significant increased which up to 29.8% at 600krad while at 300krad the Rohm SiC 1200V has decreased up to
10.15% and Rohm SiC 1700V has decreased up to 26.40%.
It concluded that the switching speed is limit at the higher doses due to the increase capacitance in power
MOSFETs. Thus, the power circuit may operate improper due to the switching speed has changed by increasing
or decreasing capacitances in MOSFETs. For instance, the larger Ciss in the MOSFET which requires more gate
charge that supply by gate driver, so the Ciss is changed, this required to redesign the gate driver in order to turn
on the device channel. Also, the larger output switching losses due to the larger Coss. Power MOSFETs are used
to in high switching application due to the changes of the terminal capacitance. The power circuit has to redesign

IJECE ISSN: 2088-8708 1457
in order to reduce the unwanted transients in the circuit due to the gate driver or switching speed is changed.
Table 1. Experimental Results of Pre and Post Irradiated Power MOSFETs
Drain-Source Voltage Vds (V)Capacitance
(pF)
Power
MOSFETs
Radiation
Dose
(krad) 0 1 2 8 10 20 30
Pre-Rad 1230.00 1230.00 1220.00 1210.00 1210.00 1190.00 1215.00
Post 50 1230.00 1230.00 1220.00 1210.00 1210.00 1190.00 1215.00
Post 100 1228.00 1229.00 1220.00 1212.00 1211.00 1189.00 1214.00
Post 300 1150.00 1151.00 1159.00 1161.00 1162.00 1162.00 1175.00
Toshiba
Si 500 V
Post 600 1161.00 1161.00 1163.00 1163.00 1167.00 1168.00 1170.00
Pre-Rad 745.00 720.29 617.63 519.00 484.99 461.866 415.50
Post 50 745.00 720.29 617.63 519.00 484.99 461.866 415.50
Post 100 744.55 721.39 618.66 518.00 487.00 460.90 450.30
Post 300 705.58 647.16 609.68 493.10 478.84 475.42 447.32
Rohm
SiC 1200V
Post 600 706.05 663.75 619.54 499.98 479.24 455.98 445.07
Pre-Rad 398.00 363.40 359.64 289.20 216.15 210.89 210.35
Post 50 398.00 363.40 359.64 289.20 216.15 210.89 210.35
Post 100 399.12 365.30 358.64 287.5 218.15 210.91 211.32
Post 300 359.91 356.16 349.70 212.84 209.85 207.29 206.90
Ciss
Rohm
SiC 1700V
Post 600 340.00 311.7 261.87 203.03 201.81 200.10 200.10
Pre-Rad 795.38 765.38 534.0 268.00 200.00 85.11 70.00
Post 50 795.38 765.38 534.0 268.00 200.00 85.11 70.00
Post 100 794.14 764.28 535.4 268.2 199.01 84.22 69.8
Post 300 1610.0 1610.0 1238.0 280.27 205.26 105.23 77.69
Toshiba
Si 500 V
Post 600 1724.0 1724.0 1724.0 437.97 314.28 119.83 88.13
Pre-Rad 777.66 737.66 531.92 272.02 244.49 173.92 133.89
Post 50 777.66 737.66 531.92 272.02 244.49 173.92 133.89
Post 100 776.89 736.96 514.12 272.08 244.23 173.81 133.72
Post 300 647.15 565.53 460.96 181.62 133.32 168.94 133.08
Rohm
SiC 1200V
Post 600 747.66 609.59 492.22 272.02 237.96 170.00 134.53
Pre-Rad 281.00 266.87 152.37 80.00 57.12 42.145 36.528
Post 50 281.00 266.87 152.37 80.00 57.12 42.145 36.528
Post 100 283.53 267.87 153.37 80.80 57.43 42.183 36.534
Post 300 333.00 288.00 226.25 67.41 58.91 42.78 36.65
Coss
Rohm
SiC 1700V
Post 600 338.00 297.00 229.21 68.4 59.016 43.21 36.80
Pre-Rad 612.10 542.34 542.34 320.11 210.00 83.34 69.50
Post 50 612.10 542.34 542.34 320.11 210.00 83.34 69.50
Post 100 611.56 541.40 543.30 322.19 211.12 83.87 69.50
Post 300 1723.00 1710.00 1328.00 410.27 305.26 115.23 87.69
Toshiba
Si 500 V
Post 600 1147.60 1106.2 1071.8 491.00 345.20 95.12 73.90
Pre-Rad 435.00 400.00 395.80 286.31 220.53 174.50 133.00
Post 50 435.00 400.00 395.80 286.31 220.53 174.50 133.00
Post 50 435.00 400.00 395.80 286.31 220.53 174.50 133.00
Post 50 435.00 400.00 395.80 286.31 220.53 174.50 133.00
Post 50 435.00 400.00 395.80 286.31 220.53 174.50 133.00
Post 100 434.98 400.00 396.20 287.21 220.43 175.50 133.00
Post 300 505.50 473.06 421.26 254.10 229.95 174.83 143.98
Rohm
SiC 1200V
Post 600 541.56 473.68 421.00 250.19 225.65 174.8 143.00
Pre-Rad 150.00 140.00 137.00 78.00 53.00 40.00 35.28
Post 50 150.00 140.00 137.00 78.00 53.00 40.00 35.28
Post 100 150.62 140.50 136.8 77.80 52.60 39.70 35.16
Post 300 271.13 246.12 213.34 64.54 57.48 41.65 35.60
Crss
Rohm
SiC 1700V
Post 600 275.5 252.03 218.30 78.10 63.40 43.50 37.30

1458 ISSN: 2088-8708
0 5 10 15 20 25 30
Drain-source voltage Vds
(V)
1150
1200
1250
Capacitance(pF)
Si 500V
Pre
50krad
100krad
300krad
600krad
0 5 10 15 20 25 30
(V)
400
500
600
700
800
Capacitance(pF)
SiC 1200V
Pre
50krad
100krad
300krad
600krad
0 5 10 15 20 25 30
(V)
200
250
300
350
400
Capacitance(pF)
SiC 1700V
Pre
50krad
100krad
300krad
600krad
Figure 2. Ciss for Si and SiC power MOSFETs
0 5 10 15 20 25 30
(V)
0
500
1000
1500
2000
Capacitance(pF)
Si 500V
Pre
50krad
100krad
300krad
600krad
0 5 10 15 20 25 30
(V)
0
200
400
600
800
Capacitance(pF)
SiC 1200V
Pre
50krad
100krad
300krad
600krad
0 5 10 15 20 25 30
(V)
0
100
200
300
400
Capacitance(pF) SiC 1700V
Pre
50krad
100krad
300krad
600krad
Figure 3. Coss for Si and SiC power MOSFETs
0 5 10 15 20 25 30
(V)
0
500
1000
1500
2000
Capacitance(pF)
Si 500V
Pre
50krad
100krad
300krad
600krad
0 5 10 15 20 25 30
(V)
0
200
400
600
Capacitance(pF)
SiC 1200V
Pre
50krad
100krad
300krad
600krad
0 5 10 15 20 25 30
(V)
0
100
200
300
Capacitance(pF)
SiC 1700V
Pre
50krad
100krad
300krad
600krad
Figure 4. Crss for Si and SiC power MOSFETs

IJECE ISSN: 2088-8708 1459
5. CONCLUSION
The gamma ray induced total dose effects on Si (TOSHIBA 2SK2662) and SiC (ROHM SCT2H12NZ
and SCT3160KL) MOSFETs have resulted in dynamic characteristics as a function of variable drain bias and
dose level. These power MOSFETs perform well after a total dose of 100 krad, and may operate up to 300
krad. From the preceding results, it is very clear that changes in device capacitances are accounted for switching
operations. Increase in oxide and interface trap densities is found to be the main degradation mechanism of
gamma irradiated transistors. The measurements confirm the fact that gamma rays seriously degrade the device
performance to a greater extent. Additionally, the failure modes in SiC power MOSFETs can differ depending on
the component and the vendor for similar values of bias normalized by rated voltage. Therefore, the research and
development is continuing to investigate SiC power MOSFETs in order to make high switching and high current
device that available operate normally at radiation region.
ACKNOWLEDGEMENT
The research was supported by Fundamental Research Grant Scheme No. 0153AB-L30. The authors
would like to thanks Industrial Technology Division, Agency Nuclear Malaysia for the gamma-ray irradiation fa-
cility. The authors also acknowledge the support of Universiti Teknologi PETRONAS for their research facilities.
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BIOGRAPHIES OF AUTHORS
Saranya Krishnamurthy received B.E degree from Department of Electronics and Communica-
tion Engineering, Coimbatore Institute of Engineering and Technology, Coimbatore, India in the
year 2011 and M.E degree from Department of Applied Electronics, Sri Krishna College of Engi-
neering and Technology, Coimbatore, India in the year 2013. She is currently pursuing the Ph.D.
from Department of Electrical and Electronics Engineering, Universiti Teknologi PETRONAS,
Malaysia. Her current research interest includes the Power electronics, VLSI design, Digital Elec-
tronics and Semiconductor Devices. From 2013 to 2015, she was an Assistance Professor at Insti-
tute of Bannari Amman Institute of technology, Erode, India. She is affiliated with IEEE as student
member.
Ramani Kannan is a senior lecturer in Universiti Tecknologi PETRONAS (UTP), Malaysia. He
received his B.E degree from Bharathiyar University, India. Later on completed his M.E and PhD
in Power Electronics and Drives from Anna University respectively. He was an Associate Profes-
sor in the department of Electrical and Electronics Engineering at the K.S. Rangasamy College of
Technology (Autonomous), India. He is a senior member IEEE, IETE, ISTE, and Institute of Ad-
vanced Engineering and Science Member. He obtained Carrier Award for Young Teacher (CAYT)
from AICTE, New Delhi (2012), and obtained an award of Young Scientist in Power Electronics
and Drives, INIDA (2015). He is the Editor-in-Chief of the Journal of Asian Scientific Research
and Regional editor South-Asia in International Journal of Computer Aided Engineering and Tech-
nology, Inderscience publisher (UK). His research interest involves power electronics, inverters,
modeling of induction motors, and optimization techniques.
Chay Che Kiong received Bachelor degree from Department of Electrical and Electronics Engi-
neering, in Universiti Tecknologi PETRONAS (UTP), Malaysia in the year 2017. He is currently
working as System Sales Engineer in AEX SYSTEM Pty Ltd,Malaysia. His research interest in-
cludes the power electronics, power systems and networking. He was worked as business develop-
ment engineer trainee at Robert Bosch sdn bhd, Selangor, Malaysia.
Taib B Ibrahim graduated from Coventry University,UK, post graduated and Ph.D.Degrees in
Electrical Machine Design, from University of Strathclyde, UK. Currently working as Associate
Professor in Electrical and Electronics Engineering Department,Universiti Teknologi PETRONAS,
Malaysia. He has published more than 115 papers in international/national conferences and journals
and seven book chapters. He is active and professional member for many editorial and advisory
boards of international journals and IEEE conferences. His research interest involves Linear and
rotary electrical machine design, Renewable energy, Power electronic converter.

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