Low_Noise_Amplifier_2_to_4GHz
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This presentation summarizes the design of a wideband low noise amplifier (LNA) using pseudomorphic high electron mobility transistors (HEMTs). The objectives were to design an LNA with a minimum noise figure and high gain over a desired frequency band. The design process involved: 1) Biasing network design; 2) Designing an ideal LNA model; 3) Designing a real LNA model including input/output matching; 4) Simulation. The results showed a minimum noise figure of 0.7 dB and gain of 14 dB at 2.46 GHz, meeting the objectives. Previous LNA designs are also summarized for comparison.
![Review of Previous Result
Author
Year
Noise Figure(dB)
Gain(dB)
Power (mW)
Frequency (GHz)
Rofougaran Et Al[3]
1996
3.5
22
27
0.9
K.S. and Thomas[3]
1997
3.5
22
30
1.5
F.B. Eric A.M kim[4]
2004
Above 3
13.5
below 25
1.6
J.B. Seo. J H Kim[5]
2008
14
1.8
3.1-10.6
K.E. Art nd AH[7]
2009
3.6-4.9
10
21
over 16
E.A. Sobhy[2]
2011
1.85-2
23
2.8
1.77
Table: Previous Result of LNA parameters
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Low_Noise_Amplifier_2_to_4GHz
- 1. A PRESENTATION ON “A Wideband Low Noise Amplifier Using Pseudomorphic High Electron Mobility Transistor.” By : Suman Sharma Roll No: 069/MSI/619 1
- 2. Introduction Low Noise Amplifier. Radio Frequency. Noise Figure. Gain. Stability. 2
- 3. Objectives Design a low noise amplifier with a minimum noise figure and high gain for a desired frequency band. 3
- 4. Block Diagram Of LNA From Antenna Input Matching Network Gain Output Matching Network To Subsequent Stages Figure: Functional Block Diagram of LNA 4
- 5. Application Of LNA From Satellite Down-Convertor BPF Low Noise Amplifier (LNA) RF IF Mixer BPF Demodulator Baseband Out RF Microwave Generator Figure: Low Noise Amplifier application Reference: A book in “Satellite Communication” by Dharma Raj Cheruku 5
- 6. Methodology Design of biasing networks (DC Biasing). Designing LNA with ideal component. Designing LNA with real component. Input and Output Matching Network. 6
- 7. Simulation Results: Figure: DC tracing with FET Biasing and its curve versus bias. 7
- 8. Designing LNA with ideal component Figure: LNA with ideal component, input and output reflection coefficient with Stability and Gain measurement. 8
- 9. Designing LNA with real component Figure: Low Noise Amplifier with real component 9
- 10. Comparison when L= 1 and 0.3 nH Figure: Stability and Gain when L=1 nH and 0.3 nH respectively 10
- 11. Input and Output Matching Network Figure: Input and Output Matching Network 11
- 12. Overall Block of Low Noise Amplifier Figure: LNA with input and output matching network 12
- 13. Noise and Gain Circle Figure: Noise and Gain Circle 13
- 14. Stability of LNA Figure: Stability measurement in entire range of LNA 14
- 15. Noise Figure Figure: Noise Figure 15
- 16. Gain Figure: showing maximum and minimum gain 16
- 17. Return Loss Figure: Input and Output Return Loss 17
- 18. Figure: Stability Region for 2 GHz frequency 18
- 19. Review of Previous Result Author Year Noise Figure(dB) Gain(dB) Power (mW) Frequency (GHz) Rofougaran Et Al[3] 1996 3.5 22 27 0.9 K.S. and Thomas[3] 1997 3.5 22 30 1.5 F.B. Eric A.M kim[4] 2004 Above 3 13.5 below 25 1.6 J.B. Seo. J H Kim[5] 2008 14 1.8 3.1-10.6 K.E. Art nd AH[7] 2009 3.6-4.9 10 21 over 16 E.A. Sobhy[2] 2011 1.85-2 23 2.8 1.77 Table: Previous Result of LNA parameters 19
- 20. Conclusion There were three main goals: Obtaining the correct S-parameters of the Agilent ATF54143 pHEMT over a wide frequency range. Calculating the noise parameters of ATF-54143 at 1 GHz to 3 GHz. Improving the LNA design for better noise performance and high gain. Minimum Noise Figure is 0.7 dB and gain is 14 dB at 2.46 GHz frequency. 20
- 21. References 1. M. E. Nozahi, A. A. Helmy, E. S. Sinencio, and K. Entesari, “An inductor-less noise-cancelling broadband low noise amplifier with composite transistor pair in 90 nm CMOS technology,” IEEE, May 2011. 2. E. A. Sobhy, A. A. Helmy, K. Entesari, and E. S. Sinencio, “A 2.8-mW Sub-2-dB Noise Figure Inductorless Wideband CMOS LNA Employing Multiple Feedback,” IEEE , August 2011. 3. D. K. Shaeffer, and Thomas,” A 1.5-V, 1.5-GHz CMOS low noise amplifier,” IEEE, May 1997. 4. F. Bruccoleri, E. A. Klumperink, and B. Nauta,”Wide-band CMOS low noise amplifier exploiting thermal noise canceling,” IEEE, February 2004. 5. J. B. Seo, J. H. Kim, H. Sun, and T. Y. Yun, “A Low-Power and Hign-Gain Mixer for UWB Systems,” IEEE, December 2008. 6. C. M. Lin, H. K. Lin, Y. A. Lai, C. P. Chang, and Y. H. Wang, “ A 10-40 GHz Broadband Subharmonic Monolithic Mixer in 0.18 µm CMOS Technology,” IEEE, February 2009. 7. K. Entesari, A. R. Tavakoli, and A. A. Helmy, “CMOS Distributed Amplifier with Extended Flat Bandwidth and Improved Input Matching Using Gate Line with Coupled Inductors,” IEEE, December 2009. 8. M. Lashsaini, L. Zenhouar, and S. Bri, “Design of Broadband Low Noise Amplifier Based on HEMT Transistor in the X-Band,” IJET, Feb-Mar 2013. 9. S. E. Shin, W. R. Deal, D. M. Yamauchi, W. E. Sutton, W. B. Luo, Y. Chen, L. P. Smorchkova, B. Heying, M. Wojtowicz, and M. Siddiqui, “Design and Analysis of Ultra Wideband GaN Dual-Gate HEMT Low-Noise Amplifiers,” IEEE, December 2009. 21
- 22. Thank You. 22