DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
MEMRISTOR
(THE FOURTH MISSING ELEMENT)
PRESENTATION BY
B.ASHOK KUMAR
GMRIT-EEE
3/31/2015
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
1)INTRODUCTION
2)COMPARSION
3)WORKING
4)TYPES
5)APPLICATIONS
6)CONCLUSION
7)REFERENCES
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
INTRODUCTION
 A resistor that retains a memory of its last programmed
state (resistance) is a memory-resistor.
 Memristors resistance varies according to a device
memristance function,allowing via tiny read charges,
access to a “history” of applied voltage.
 Memristor exhibit their unique properties primarily at the
nano scale. And also such properties have been observed
in action prior to the HP lab prototypes.
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
HISTORY:
# Year Who Where
0 ?? Unknowns Those who may have observed memristance, while studying
thin films.
1 1960 Bernard Widrow develops a 3-terminal device called a "memistor" as a new
fundamental circuit component forming the basis of a neural network
circuit called ADALINE (ADAptive LInear NEuron).
2 1972 Leon Chua His student Sung Mo Kang publish a paper entitled "Memristive
Devices and Systems" in the Proceedings of the IEEE generalizing the
theory of memristors and memristive systems
3 2008 Stanley Williams Dmitri Strukov, Gregory Snider, Duncan Stewart, and Stan Williams,
of HP Labs, publish an article in Nature
"The missing memristor found"
identifying a link between the 2-terminal resistance switching
behavior found in nano scale systems and Leon Chua's memristor
4 2009 XiaobinWang, Yiran Chen, Haiwen Xi, Hai Li, and Dimitar Dimitrov
publishes article entitled “Spintronic Memristor Through Spin-
Torque-Induced Magnetization Motion” in IEEE Electron Device
Letters
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
COMPARISON
a)G.S.OHM b)M.FARADAY
c)J.HENRY d)LEONO.CHUA
1827 1745
1831 1960
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
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3/31/2015
ELEMENT TYPE UNIT
R =V/I Passive & Linear Ω(ohms)
L=ф*I Passive & Linear H(henry)
C=Q/V Passive & Linear F(farad)
M=ф/q Passive & Non-Linear Ω (ohms)
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
• Leon Chua’s original graph of the hypothetical
memristor’s behavior is shown at top right;
– The graph of R. Stanley Williams’s experimental
results in the Nature paper is shown below.
• The loops map the switching behavior of the device:
– It begins with a high resistance, and as the
voltage increases, the current slowly increases.
– As charge flows through the device, the
resistance drops,
– Then, as the voltage decreases, the current
decreases but more slowly, because charge is
flowing through the device and the resistance is
still dropping.
• The result is an on-switching loop.
– When the voltage turns negative, the resistance of
the device increases, resulting in an off-switching
loop.
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
Applied voltage makes the
oxygen vacancies (+ve) to
shift towards the –ve
voltage
P
T
P
T
TiOv(2-x)
TiO2
3
nm
2 nm
OxidizedReduced
(-)ve (+)ve
CONSTRUCTION AND OPERATION:
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
Tio2-x
Tio2
Ron
Roff
WORKING:
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
TYPES
These type of memristors primarily rely on different
material properties of thin film atomic lattices that exhibit hysterisis
under the application of charge.
1. Molecular and ionic thin film memristive systems:
The list of different memristor types below shows there are a wide variety of
systems that exhibit memristive behaviour and more are being discovered as
indusries begin to build out their research prototyping and manufacturing
infrastructures.
a) Titanium dioxide memristors:
b) polymeric(ionic)memristors:
c) Manganite memristive systems:
d) Resonant-tunneling diode memristors:
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
These systems as opposed to molecular and ionic nanostructure
based systems, rely on the property of degree of freedom in electric spin. In
this system electron spin polarisation is altered
2.SPIN BASED AND MAGNETIC MEMRISTIVE SYSTEMS:
3-TERMINAL MEMRISTORS:
The advanced technology of electroplating was used to demonstrate the
viability of a non solid state three terminal
Memristor by Bernard Widrow at Stanford. The conductance was described by
the time integral of current.
a) Spintronic memristors:
b) Spin Torque Transfer (STT) MRAM:
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
APPLICATIONS
 Nonvolatile memories
 Low power and remote sensing
•Memristors can retain memory states and data in power off modes.
•The fab prototypes resistance is read with alternating current so
that the stored value remains unaffected.
•NVRAM and SSD competitors could start showing on in the market
within 2 years.
•Coupled with memcapacitors and meminductors, the complimentary
circuits to the memristor which allow for the storage of charge.
•Memristors can possibly allow for nano-scale low power memory and
distributed state storage, as a future extension of NVRAM capabilities.
•These are currently all hypothetical in terms of time to market.
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
 Analog Computation and Circuits:
 Cross Bar Latches as Transistor Replacements (or) Augmentors:
Solid-state memristors can be combined into
devices called crossbar latches, which could
replace transistors in future computers, taking
up a much smaller area.
•Analog Computations embodied a whole area of research which unfortunately
were not as scalable, reproducible or dependable as digital solutions.
• These memristors will now allow us to revisit a lot of the analog science
that was abandoned in the mid 1960’s.
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
 Circuits which mimic Neuromorphic and Biological Systems:
 Programmable logic and signal processing:
•The memristive applications in these areas will remain relatively the
same, because it will only be a change in the under lying physical
architecture ,allowing their capabilities to expand to most likely be
unrecognizable as related.
•Simple electronic circuits based on an LC network and
memristors have been built ,and used recently to model
experiments on adaptive behaviour of unicellular organisms.
•Modeling a brain using rationated mathematics .
•Memristor cat brain.
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
CONCLUSION
 MEMRISTOR will change circuit design in the 21ST
century.
 Utilization memristors effectively changes standard
protocals and structures.
 Memristors are a new class of device with very different
but useful properties for memory storage.
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
3/31/2015
REFERENCE:
• "Memristor—The Missing Circuit Element",
IEEE Transactions on Circuit Theory by Leon O
Chua (1971)
• "Memristive Devices and Systems" in the
Proceedings of the IEEE by Leon Chua and his
student Sung Mo Kang (1976)
• "The missing memristor found" Nature (may2008)
• IEEE Spectrum - The Mysterious Memristor, by
Sally Adee (may 2008)
• IEEE Spectrum - How We Found the Missing
Memristor, by R. Stanley Williams (dec 2008)
DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork
Learning Social Responsibility Respect for IndividualDeliver The Promise
GMRInstituteofTechnology,Rajam
THANK YOU
3/31/2015

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MEMRISTOR BY ASHOK

  • 1. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam MEMRISTOR (THE FOURTH MISSING ELEMENT) PRESENTATION BY B.ASHOK KUMAR GMRIT-EEE 3/31/2015
  • 2. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 1)INTRODUCTION 2)COMPARSION 3)WORKING 4)TYPES 5)APPLICATIONS 6)CONCLUSION 7)REFERENCES
  • 3. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 INTRODUCTION  A resistor that retains a memory of its last programmed state (resistance) is a memory-resistor.  Memristors resistance varies according to a device memristance function,allowing via tiny read charges, access to a “history” of applied voltage.  Memristor exhibit their unique properties primarily at the nano scale. And also such properties have been observed in action prior to the HP lab prototypes.
  • 4. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 HISTORY: # Year Who Where 0 ?? Unknowns Those who may have observed memristance, while studying thin films. 1 1960 Bernard Widrow develops a 3-terminal device called a "memistor" as a new fundamental circuit component forming the basis of a neural network circuit called ADALINE (ADAptive LInear NEuron). 2 1972 Leon Chua His student Sung Mo Kang publish a paper entitled "Memristive Devices and Systems" in the Proceedings of the IEEE generalizing the theory of memristors and memristive systems 3 2008 Stanley Williams Dmitri Strukov, Gregory Snider, Duncan Stewart, and Stan Williams, of HP Labs, publish an article in Nature "The missing memristor found" identifying a link between the 2-terminal resistance switching behavior found in nano scale systems and Leon Chua's memristor 4 2009 XiaobinWang, Yiran Chen, Haiwen Xi, Hai Li, and Dimitar Dimitrov publishes article entitled “Spintronic Memristor Through Spin- Torque-Induced Magnetization Motion” in IEEE Electron Device Letters
  • 5. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 COMPARISON a)G.S.OHM b)M.FARADAY c)J.HENRY d)LEONO.CHUA 1827 1745 1831 1960
  • 6. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 ELEMENT TYPE UNIT R =V/I Passive & Linear Ω(ohms) L=ф*I Passive & Linear H(henry) C=Q/V Passive & Linear F(farad) M=ф/q Passive & Non-Linear Ω (ohms)
  • 7. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015
  • 8. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015
  • 9. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015
  • 10. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015
  • 11. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 • Leon Chua’s original graph of the hypothetical memristor’s behavior is shown at top right; – The graph of R. Stanley Williams’s experimental results in the Nature paper is shown below. • The loops map the switching behavior of the device: – It begins with a high resistance, and as the voltage increases, the current slowly increases. – As charge flows through the device, the resistance drops, – Then, as the voltage decreases, the current decreases but more slowly, because charge is flowing through the device and the resistance is still dropping. • The result is an on-switching loop. – When the voltage turns negative, the resistance of the device increases, resulting in an off-switching loop.
  • 12. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 Applied voltage makes the oxygen vacancies (+ve) to shift towards the –ve voltage P T P T TiOv(2-x) TiO2 3 nm 2 nm OxidizedReduced (-)ve (+)ve CONSTRUCTION AND OPERATION:
  • 13. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 Tio2-x Tio2 Ron Roff WORKING:
  • 14. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 TYPES These type of memristors primarily rely on different material properties of thin film atomic lattices that exhibit hysterisis under the application of charge. 1. Molecular and ionic thin film memristive systems: The list of different memristor types below shows there are a wide variety of systems that exhibit memristive behaviour and more are being discovered as indusries begin to build out their research prototyping and manufacturing infrastructures. a) Titanium dioxide memristors: b) polymeric(ionic)memristors: c) Manganite memristive systems: d) Resonant-tunneling diode memristors:
  • 15. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 These systems as opposed to molecular and ionic nanostructure based systems, rely on the property of degree of freedom in electric spin. In this system electron spin polarisation is altered 2.SPIN BASED AND MAGNETIC MEMRISTIVE SYSTEMS: 3-TERMINAL MEMRISTORS: The advanced technology of electroplating was used to demonstrate the viability of a non solid state three terminal Memristor by Bernard Widrow at Stanford. The conductance was described by the time integral of current. a) Spintronic memristors: b) Spin Torque Transfer (STT) MRAM:
  • 16. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 APPLICATIONS  Nonvolatile memories  Low power and remote sensing •Memristors can retain memory states and data in power off modes. •The fab prototypes resistance is read with alternating current so that the stored value remains unaffected. •NVRAM and SSD competitors could start showing on in the market within 2 years. •Coupled with memcapacitors and meminductors, the complimentary circuits to the memristor which allow for the storage of charge. •Memristors can possibly allow for nano-scale low power memory and distributed state storage, as a future extension of NVRAM capabilities. •These are currently all hypothetical in terms of time to market.
  • 17. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015  Analog Computation and Circuits:  Cross Bar Latches as Transistor Replacements (or) Augmentors: Solid-state memristors can be combined into devices called crossbar latches, which could replace transistors in future computers, taking up a much smaller area. •Analog Computations embodied a whole area of research which unfortunately were not as scalable, reproducible or dependable as digital solutions. • These memristors will now allow us to revisit a lot of the analog science that was abandoned in the mid 1960’s.
  • 18. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015  Circuits which mimic Neuromorphic and Biological Systems:  Programmable logic and signal processing: •The memristive applications in these areas will remain relatively the same, because it will only be a change in the under lying physical architecture ,allowing their capabilities to expand to most likely be unrecognizable as related. •Simple electronic circuits based on an LC network and memristors have been built ,and used recently to model experiments on adaptive behaviour of unicellular organisms. •Modeling a brain using rationated mathematics . •Memristor cat brain.
  • 19. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 CONCLUSION  MEMRISTOR will change circuit design in the 21ST century.  Utilization memristors effectively changes standard protocals and structures.  Memristors are a new class of device with very different but useful properties for memory storage.
  • 20. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam 3/31/2015 REFERENCE: • "Memristor—The Missing Circuit Element", IEEE Transactions on Circuit Theory by Leon O Chua (1971) • "Memristive Devices and Systems" in the Proceedings of the IEEE by Leon Chua and his student Sung Mo Kang (1976) • "The missing memristor found" Nature (may2008) • IEEE Spectrum - The Mysterious Memristor, by Sally Adee (may 2008) • IEEE Spectrum - How We Found the Missing Memristor, by R. Stanley Williams (dec 2008)
  • 21. DepartmentofMechanicalEngineering Humility Entrepreneurship Teamwork Learning Social Responsibility Respect for IndividualDeliver The Promise GMRInstituteofTechnology,Rajam THANK YOU 3/31/2015