MOSFET’S
[ METAL-OXIDE SEMICONDUCTOR FIELD
EFFECT TRANSISTOR ]
MOSFET’S
 There are 2 types of MOSFET’s:
• Depletion mode MOSFET (D-MOSFET)
• N-channel D-Type MOSFET
• P-channel D-Type MOSFET
• Enhancement Mode MOSFET (E-MOSFET)
DEPLETION MODE MOSFET CONSTRUCTION
• The Drain (D) and Source (S) leads connect to the to n-doped regions
• These N-doped regions are connected by an n-channel
• This n-channel is connected to the Gate (G) via a thin insulating layer of
SiO2
• The n-doped material lies on a p-doped substrate that may have an
additional terminal connection called SS
BASIC OPERATION
D-MOSFET may be biased to operate in two modes:
• The Depletion mode or The Enhancement mode
D-MOSFET DEPLETION MODE OPERATION
The transfer characteristics are similar to the JFET
In Depletion Mode operation:
When VGS = 0V, ID = IDSS
When VGS < 0V, ID < IDSS
When VGS > 0V, ID > IDSS
The formula used to plot the Transfer Curve, is:
 
 
 
2
GS
D DSS
P
V
I = I 1-
V
D-MOSFET ENHANCEMENT MODE OPERATION
Enhancement Mode operation
In this mode, the transistor operates with VGS > 0V, and ID increases above IDSS
Shockley’s equation, the formula used to plot the Transfer Curve, still applies but
VGS is positive:
 
 
 
2
GS
D DSS
P
V
I = I 1-
V
p-Channel Depletion Mode MOSFET
The p-channel Depletion mode MOSFET is similar to the n-channel except that
the voltage polarities and current directions are reversed
D-MOSFET Symbols
January2004
ELE
C
121
9
Specification Sheet
ENHANCEMENT MODE
MOSFET’S
n-Channel E-MOSFET showing channel length L and channel
width W
Enhancement Mode MOSFET Construction
The Drain (D) and Source (S) connect to the to n-doped regions
These n-doped regions are not connected via an n-channel without an external
voltage
The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO2
The n-doped material lies on a p-doped substrate that may have an additional
terminal connection called SS
Basic Operation
The Enhancement mode MOSFET only operates in the enhancement mode.
VGS is always positive
IDSS = 0 when VGS < VT
As VGS increases above VT, ID increases
If VGS is kept constant and VDS is increased, then ID saturates (IDSS)
The saturation level, VDSsat is reached.
p-Channel Enhancement Mode MOSFETs
The p-channel Enhancement mode MOSFET is similar to the n-channel except
that the voltage polarities and current directions are reversed.
E-MOSFET Symbols
Specification Sheet
SOME PACKAGES OF MOSFET

Mosfet’s

  • 1.
    MOSFET’S [ METAL-OXIDE SEMICONDUCTORFIELD EFFECT TRANSISTOR ]
  • 2.
    MOSFET’S  There are2 types of MOSFET’s: • Depletion mode MOSFET (D-MOSFET) • N-channel D-Type MOSFET • P-channel D-Type MOSFET • Enhancement Mode MOSFET (E-MOSFET)
  • 3.
    DEPLETION MODE MOSFETCONSTRUCTION • The Drain (D) and Source (S) leads connect to the to n-doped regions • These N-doped regions are connected by an n-channel • This n-channel is connected to the Gate (G) via a thin insulating layer of SiO2 • The n-doped material lies on a p-doped substrate that may have an additional terminal connection called SS
  • 4.
    BASIC OPERATION D-MOSFET maybe biased to operate in two modes: • The Depletion mode or The Enhancement mode
  • 5.
    D-MOSFET DEPLETION MODEOPERATION The transfer characteristics are similar to the JFET In Depletion Mode operation: When VGS = 0V, ID = IDSS When VGS < 0V, ID < IDSS When VGS > 0V, ID > IDSS The formula used to plot the Transfer Curve, is:       2 GS D DSS P V I = I 1- V
  • 6.
    D-MOSFET ENHANCEMENT MODEOPERATION Enhancement Mode operation In this mode, the transistor operates with VGS > 0V, and ID increases above IDSS Shockley’s equation, the formula used to plot the Transfer Curve, still applies but VGS is positive:       2 GS D DSS P V I = I 1- V
  • 7.
    p-Channel Depletion ModeMOSFET The p-channel Depletion mode MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed
  • 8.
  • 9.
  • 10.
  • 11.
    n-Channel E-MOSFET showingchannel length L and channel width W
  • 12.
    Enhancement Mode MOSFETConstruction The Drain (D) and Source (S) connect to the to n-doped regions These n-doped regions are not connected via an n-channel without an external voltage The Gate (G) connects to the p-doped substrate via a thin insulating layer of SiO2 The n-doped material lies on a p-doped substrate that may have an additional terminal connection called SS
  • 13.
    Basic Operation The Enhancementmode MOSFET only operates in the enhancement mode. VGS is always positive IDSS = 0 when VGS < VT As VGS increases above VT, ID increases If VGS is kept constant and VDS is increased, then ID saturates (IDSS) The saturation level, VDSsat is reached.
  • 14.
    p-Channel Enhancement ModeMOSFETs The p-channel Enhancement mode MOSFET is similar to the n-channel except that the voltage polarities and current directions are reversed.
  • 15.
  • 16.
  • 17.