Multiple gate field effect transistors for

IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
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Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 542
MULTIPLE GATE FIELD-EFFECT TRANSISTORS FOR
FUTURE CMOS TECHNOLOGIES
Suhas N.Yadav1
, M.S.Jadhav2
1
Department of E & TC Engineering,Dr.JJMCOE, Jaysingpur
2
Department of E & TC Engineering,.AIT (Polytechnic), Vita.
Abstract
This is a review paper on the topic of multiple gate field effect transistors: MuGFETs, or FinFETs, as they are called. First, the
motivation behind multiple gate FETs is presented. This is followed by looking at the evolution of FinFET technologies; the main
flavors (variants) of Multigate FETs; and their advantages/disadvantages. The physics and technology of these devices is briefly
discussed. Results are then presented which show the performance figures of merit of FinFETs, and their strengths and
weaknesses. Finally, a perspective on the future of the FinFET technology is presented.
Keywords: CMOS scaling, Double gate MOSFET, FinFET, Multiple gate FET, Multigate FET
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1.INTRODUCTION
In this paper, we have taken a comprehensive look at
undoped double gate MOSFETs, also known as MuGFETs
or FinFETs, which are promising candidates for scaling
CMOS into the sub-32 nm era on account of their
potentially improved channel control and reduced dopant
fluctuations. We first presented the motivation behind
multigate FETs, and then traced the evolution of multigate
FETs, and also discussed the classification of multigate
FETs based on current flow. We then outlined the aspects of
the FinFET's fabrication technology. We then went into the
many aspects of the FinFET's performance by looking at
their DC, low-frequency analog, and high-frequency (RF)
performance parameters, and by benchmarking the FinFET's
performance with that of the planar bulk MOSFET, and
discussing their relative merits and demerits. No discussion
on FinFETs would be complete without discussing the
impact of the fin width. Here again, we looked at the many
trade-offs involving fin width considerations. We also
discussed briefly the noise and mismatch performance of
FinFETs and concluded by making an overall assessment of
the FinFET technology.
1.1.Motivation Behind Multigate Field-
Effect Transistors:
The phenomenon of short channel effects (SCEs) in metal-
oxide-semiconductor field-effect transistors (MOSFETs) has
been known since the late 1970s. As gate lengths are
reduced, threshold voltages are seen to decrease and OFF-
state currents are seen to increase. This is a consequence of
the fact that as gate lengths are decreased, the depletion
regions associated with the source-to-body and drain-to-
body regions become closer to each other and start to
interact with each other. Since depletion regions are regions
of high electric fields, they facilitate carrier transport
directly between the source and drain regions, which gives
rise to the observed phenomena of higher OFF-state
currents, reduced threshold voltages, and reduced control of
the gate over transistor characteristics in MOSFETs.
Classical scaling approaches have dealt with this problem by
requiring an increase in body doping, thereby decreasing the
depletion widths associated with the source-to-body and
drain-to-body regions, so that these two junctions are kept
separated to the extent possible. However, increasing the
body doping is accompanied by severe drawbacks such as
degraded mobilities, increased capacitances, and increased
statistical fluctuations, all of which pose serious challenges
to scaling. Innovative solutions such as dynamic threshold
voltage MOSFETs (DTMOS) have been successfully used
to reduce the leakage power consumption of analog and
digital circuits.
An alternate way to increase the gate control over the
channel would be to have an extra gate. This additional gate
would help strengthen the immunity of the channel from
penetration effects of the drain electric field. In this
approach, the main lever for controlling the channel is not
with the body doping, but the separation between the two
gates. In fact the body doping is deliberately kept at a very
low value, at near-intrinsic levels. This helps avoid the
problems of mobility degradation, higher junction
capacitances, and stochastic fluctuations. Undoped double
gate MOSFETs (DG MOSFETs) are thus a better option
from the point of view of long-term scalability and extend
ability to future CMOS technologies.
2. EVOLUTION OF MULTIGATE FETS
The seriousness of the problem of short channel effects in
single gate MOSFET transistors, and the potential
difficulties associated with their scaling by increasing body
doping became evident way back in the early 1990s, and
many true DG MOSFET architectures were proposed. A
very good overview of these architectures is given in based

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on their orientation, Wong grouped the double gate
architectures into planar (or Type I), vertical pillar (or Type
II), and vertical (or Type III). These are illustrated in [Figure
1].
Fig-1:Double gate MOSFET Topologies
In 1990, Hisamoto proposed a Type III DG MOSFET
topology with the name fully depleted lean-channel
transistor (DELTA). The DELTA topology did not gain
momentum at that time since the classical planar MOSFET
topology was meeting the transistor specifications
satisfactorily.
Fig-2:he Fully Depleted Lean Channel Transistor (DELTA)
topology, introduced in 1989
In the subsequent years, as scaling challenges became more
severe, the DG MOSFET architecture was revisited, and the
DELTA topology made a comeback a decade later, this time
under the name 'FinFET'. This time, it captured the attention
and fascination of the scientific community, and the
subsequent few years saw an explosion in research and
development efforts into FinFETs
. There are two minor variants of the FinFET, namely, the
omega-gate FinFET and the pi-gate FinFET, which are
named following the shape of the overlapping gate over the
fin. In the case of the omega-gate FinFET, the gate
undercuts and partially covers the bottom surface of the fin
as well, whereas in the case of the pi-gate FinFET, the gate
extends to a depth below the bottom of the silicon fin. The
objective of these structures is to achieve an additional gate
control over the channel and prevent fringing fields from
penetrating into the silicon body. [Figure 3] shows these two
variants of the FinFET.
Fig 3:Pi- and Omega-gate FinFETs.
And then we have the gate wrap-around FET, or gate all-
around (GAA) FET, or surround-gate FET, where the
silicon is surrounded on all sides by the gate. Such a
transistor is also known as a nanowire FET, and represents
the ultimately scaled MOSFET device, i.e., the device with
the maximum possible gate control over the channel. This
device is shown in [Figure 4]. Such a device was proposed
as early as 1990.
Fig-4: Gate wrap-arround or Gate all-round FET.
3. FABRICATION TECHNOLOGY
The FinFET process can either follow a "gate-first" route, or
a "gate-last" route. In the former route, fin formation is
followed by gate stack formation followed by extension
formation, whereas in the latter route, fin formation is
followed by extension formation followed by gate stack
formation.
Both routes have been used for fabricating well-functioning
FinFETs down to 20 nm gate lengths. FinFETs are
fabricated with fin widths that are typically less than one-
half of the minimum gate lengths.
Such dimensions are typically sublithographic, and not
possible to define directly in a single-step process.
Techniques such as e-beam lithography can be used to
pattern the fins directly; however, this route is not preferred
for production due to high equipment cost and low
manufacturing throughput.
Hence fin patterning needs to make use of creative
techniques in order to pattern such sublithographic
dimensions. Two of the mainstream techniques for fin
definition are resist-defined fin (RDF) patterning and
spacer-defined fin (SDF) patterning. A schematic flow of
the RDF process is shown in [Figure 5].

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Fig-5: Process flow for Resist Defined Fin (RDF)
technology.
In this process, a thick (≈ 100 nm) hardmask is deposited on
the silicon. This is followed by a deposition of a positive
photoresist and exposure using 193-nm DUV lithography in
order to define the active areas. Unexposed areas of the
photoresist are removed, exposing the hardmask beneath,
which is then etched using an anisotropic etch process. After
the hardmask is removed from the exposed areas using a
HF-based isotropic (wet) etch, trimming of the
resist/hardmask stack is performed in order to reduce the
thickness down to the desired sublithographic dimension.
Once the hardmask thickness has been brought to the
desired value, once again an aggressive, directional etch is
carried out, this time etching into the silicon film, while the
resist/hardmask combination serves to protect those areas
that will eventually form the fins. This etch is continued till
all the unprotected silicon has been etched away, and then
the hardmask on top of the silicon is also removed to reveal
the fin areas.
Fig-6:Process flow for spacer defined Fin Technology.
A schematic of the SDF process is illustrated in [Figure 6].
In this approach, a sacrificial SiGe film is blanket deposited
on top of the silicon film and patterned in such a way that
the width of this sacrificial SiGe defines the final fin-to-fin
spacing. This is followed by the formation of a thin nitride
spacer along the sidewalls of the SiGe. Next the SiGe is
removed, leaving behind the nitride spacers, which serve as
a hardmask during the subsequent etch of the silicon film.
The thickness of the spacer translates into the resulting
width of the fins. This is the SDF formation process.
Depending on the process control and the desired fin widths,
this process of sidewall spacer formation and etching can
even be carried out one more time to result in even smaller
fin widths. High fin patterning densities can be obtained
using the SDF process; however, in this instance the fin
width is fixed by the technology, and it is not possible to use
it as a design variable, since arbitrary fin widths are not
supported in this technology.
Fin width definition is followed by a hydrogen annealing
step in order to relax the stresses and defects at the surface
which may have resulted due to aggressive etch chemistries
employed for fin definition. This hydrogen annealing step
also smoothens the sharp edges of the FinFETs cross
section, resulting in a rounded profile, which reduces the
problems of electric field crowding and corner effects.
[Figure 7] is a top view of a FinFET before and after
hydrogen anneal, showing the effect of corner rounding.
Fig-7:Top view of a FinFET before and after corner round-
ing step.
The fabrication sequence is shown schematically in [Figure
8].
Figure 8: Main modules in the FinFET fabrication sequence.
In the gate-last process the source/drain is formed
immediately after fin patterning. Doped polysilicon or
polycrystalline SiGe is deposited on the fin, followed by a
patterning which defines the source/drain extension regions.
Spacer is grown on the insides of this region, and is
followed by gate stack deposition and patterning. A picture
of the FinFET at the end of its fabrication sequence is shown
in [Figure 9].
Fig-8: The FinFET at the end of the Front-End-Of-Line
(FEOL) steps.
4. DEVICE PERFORMANCE
To assess the DC and low-frequency analog performance,
we look at device parameters such as the parasitic
resistance, mobility, saturation velocity, and corresponding
figures of merit such as the drive current (ION ), leakage
current (IOFF ), transconductance (Gm ), output conductance
(Gds ), and voltage gain (Gm /Gds ). These are obtained from
I-V and low-frequency C-V measurements. To assess the
high-frequency (RF) performance, we perform two-port S-
parameter measurements from which we obtain the high-
frequency transconductance, output conductance, parasitic
resistance, and capacitance, and corresponding RF figures of

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merit such as the unity gain current frequency (or cutoff
frequency), fT , and the unity power gain frequency (or
oscillation frequency), fmax . There are also important
considerations such as low-frequency noise, high-frequency
noise and current mismatch, and the overall device
performance is thus a complex function of all of these. The
FinFET's performance also depends strongly on the width of
the patterned fins, known as the fin width. In this paper, we
will show trends in some of the key device parameters and
figures of merit for FinFETs, and compare them with those
of planar bulk MOSFETs.
4.1 DC and Low-Frequency Analog Performance
4.1.1 Source/Drain Resistance
Fig-9:Source/Drain resistance extraction from a plot
RTOTAL vs L.
The S/D Series resistance of FinFETs is seen to be 3-4
times higher than planar MOSFETs. This is due to higher
spreading resistance encountered in FinFETs due to its 3-
dimensional current flow path.
4.1.2 Mobility and Saturation Velocity
Fig-10:Comparison of mobility in FinFETs versus planar
bulk MOSFETs.
At lower electric fields, mobility of FinFETs is higher
owing to reduced coulomb scattering which is due to their
lower doping. Mobility is extracted using the split CV
method, and the channel length is equal to 1 Ām.
Fig-11:Comparison of saturation velocity in FinFETs versus
Planar bulk MOSFETs.
Due to the dominant (110) orientation, and due to the
smaller volume available for current flow, in FinFETs, their
saturation velocity is lower compared to planar MOSFETs.
Saturation velocity is calculated as the ratio of peak
4.1.3 Transconductance and Voltage Gain
Two of the important analog figures of merit are the
transconductance (Gm ) and the voltage gain (Av ).
Fig-12:Length scaling of transconductance (Gm) and
voltage gain (Av) of FinFETs and planar MOSFETs.
FinFETs show a lower transconductance on account of a
higher series resistance and lower saturation velocity, and a

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higher voltage gain due to a much lower output conductance
which offsets the reduced transconductance.
Fig-13:Plot of transconductance (Gm) versus voltage gain
(Av) of FinFETs versus planar bulk
MOSFETs for gate voltage overdrives of 0.2 V and 0.6 V.
Dark symbols represent planar bulk MOSFETs, while light
symbols represent FinFETs. Planar bulk is able to reach
high Gm but at reduced Av, while the opposite is true for
FinFETs.
4.2 High-Frequency (RF) Performance
Till now we have looked at the DC and low-frequency
analog performance of FinFETs and benchmarked it against
that of planar FETs. FinFETs are observed to have a high
source/drain series resistance, which degrades their currents
and transconductances. At RF frequencies, the device
performance is additionally impacted due to parasitic
capacitances. There are several components of parasitic
capacitance in a conventional planar MOSFET. These
comprise the outer fringing capacitance (Cof ), the inner
fringing capacitance (Cif ), the overlap capacitance (Cov )
and the top plate capacitance (Ctop ). These are shown in
[Figure 15].
Fig-14:Parasitic capacitances in a conventional planar
MOSFET.
It is comprised of the top fringing capacitance, outer
fringing capacitance, inner fringing capacitance and the and
gate overlap (or LDD under lap) capacitance. In a FinFET,
apart from the above-mentioned components, there exist
additional parasitic capacitance components on account of
their three-dimensional nature. Considerable work on these
additional parasitic capacitances has been done by Wu et al.
The major additional parasitic capacitance component in
FinFETs is the one between the gate and the inner walls of
the source, drain, and the access lines. This is shown in
[Figure 16].
Fig-15:mportant component of a FinFET's parasitic
capacitance is the one existing between the gate and the
inner walls of the source, drain and the access lines.
The combined effect of the reduced analog transconductance
and the increased parasitic capacitance is to degrade the
cutoff frequency, fT, which is proportional to the ratio of the
transconductance to the total gate capacitance (which
includes the parasitic capacitance). This is shown in [Figure
17].
Fig-16: Comparison of intrinsic and extrinsic cutoff
frequencies of FinFETs and planar FETs.
While the intrinsic cutoff frequencies of FinFETs is nearly
equal to that of planar FETs, the extrinsic cutoff frequency
is much reduced owing to higher parasitic capacitances.
4.3 Impact of the Fin Width
An important determinant of the FinFET performance is the
width of the patterned width, known as the fin width (Wfin ).
The fin width is very important as it controls the

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electrostatics of a FinFET, and thereby it strongly affects its
performance.
Going to a narrower fin width increases the electrostatic
control of the gate over the channel, thereby suppressing
short channel effects and making it possible to scale the
channel length even further. From an analog point of view,
an increased gate control of the channel translates into a
decreased drain control over the channel, resulting in a
decreased channel length modulation and lower output
conductance (Gds ), which is desirable. There are two main
drawbacks to decreasing the fin width. The first is the lower
electron mobility of the (110) sidewall as compared to the
(100) top surface. This can be circumvented by changing the
sidewall orientation of nFinFETs. The hole mobility of the
(110) sidewall is in fact higher than the (100) orientation;
hence, pFinFET performance is expected to be improved
compared to planar pFETs. The second drawback to
decreasing the fin width is from a technological point of
view: it is more challenging to fabricate narrow-width
FinFETs on two counts: series resistance and variability.
Due to current crowding issues, the series resistance of
narrow fins increases dramatically, degrading the drive
current and transconductance. Secondly, process-induced
variations in the fins become more prominent on going
to narrower fin widths. This is known as "fin width
roughness" and has a strong negative impact on the device-
to-device variability, degrading the mismatch parameters.
4.4 Noise and Mismatch
Noise and mismatch are important considerations for analog
and RF applications. The low-frequency (1/f) noise as well
as the mismatch is dependent on the quality of the fin wall,
which depends on the process-induced roughness. Since
there is a strong correlation between fin width and fin
roughness, we observe a strong correlation between fin
width and the noise/mismatch performance. For extremely
narrow fins which suffer from roughness as well as series
resistance problems, we see higher noise and mismatch
parameters. In the case of FinFETs with somewhat relaxed
fin width, we see that the noise is comparable to planar
FETs, while the mismatch performance is better. The
improved mismatch in this case is attributed to a
combination of a lower channel doping and the absence of
threshold voltage implants and halo implants in the case of
FinFETs.
5.CONCLUSIONS
In conclusion, FinFETs are a promising choice for scaling
CMOS into the sub-32 nm era as they are motivated by
sound theoretical principles. However, they suffer from the
problems of high parasitics and fin roughness. The success
of the FinFET technology depends largely on the ability to
overcome these two considerable challenges.
REFERENCES
[1]Assaderaghi, S. Parke, D. Sinitsky, J. Bokor, P. Ko, and
C. Hu. "A dynamic threshold voltage MOSFET (DTMOS)
for very low voltage operation," IEEE Electron Device Lett.,
vol. 15, no. 12, pp. 510-2, Dec. 1994
[2]M.J. Chen, J.S. Ho, T.H. Huang, C.H. Yang, Y.N. Jou,
and T. Wu. "Back-gate forward bias method for low-voltage
CMOS digital circuits," IEEE Trans. Electron Devices, vol.
43, no. 6, pp. 904-10, Jun. 1996
[3]Y.K. Choi, T.J. King, and C. Hu. "Spacer FinFET: nano-
scale CMOS technology for the terabit era," in Proc.
International Semiconductor Device Research Symposium,
pp. 543-6, 5-7 Dec. 2001.
[4]Y. Taur, D. Buchanan, W. Chen, D. Frank, K. Ismail, and
S.H. Lo, et al. "CMOS scaling into the
nanometer regime," Proc. IEEE, vol. 85, no. 4, pp. 486-504,
Apr. 1997.
[5]H. Wong, K. Chan, and Y. Taur. "Self-aligned (top and
bottom) double-gate MOSFET with a 25 nm thick silicon
channel," in Proc. International Electron Devices Meeting
(IEDM), pp. 427-30, 7-10 Dec. 1997.
[6]T. Skotnicki, J. Hutchby, T.J. King, H.S. Wong, and F.
Boeuf. "The end of CMOS scaling: toward the introduction
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21, no. 1, pp. 16-26, Jan-Feb. 2005
[7]H.S. Wong. "Beyond the conventional transistor,"
IBM J. Res. and Dev., vol. 46, pp. 133

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