SPICE MODEL of S30SC4MT (Professional Model) in SPICE PARK
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This document presents a device modeling report for the S30SC4MT Schottky rectifier manufactured by Shindengen Bee Technologies Inc. It includes detailed circuit configuration, parameter specifications, and simulation results for forward current, capacitance, and reverse characteristics, along with error comparisons between measurements and simulations. The document is copyrighted by Bee Technologies Inc. 2010.
SPICE MODEL of S30SC4MT (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: DIODE/ SCHOTTKY RECTIFIER / PROFESSIONAL PART NUMBER: S30SC4MT MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 1
- 2. Circuit Configuration U1 S30SC4MT 1 2 3 Spice Model Parameters PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 2
- 3. Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.5V 1.0V 1.5V 2.0V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 U1 0Vdc S30SC4MT R2 100MEG 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 3
- 4. Comparison Graph Circuit Simulation Result 100 FORWARD CURRENT:IF(A) 10 1 Measurement Simulation 0.1 0 0.5 1 1.5 2 FORWARD VOLTAGE：VF(V) Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.1 0.2600 0.2562 -1.46 0.2 0.2800 0.2748 -1.86 0.5 0.3000 0.3009 0.28 1 0.3200 0.3221 0.67 2 0.3500 0.3469 -0.87 5 0.3950 0.3913 -0.93 10 0.4400 0.4435 0.81 20 0.5200 0.5300 1.92 50 0.7500 0.7583 1.11 100 1.1300 1.1140 -1.42 150 1.4500 1.4588 0.61 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 4
- 5. Capacitance Characteristic Circuit Simulation Result 5.0n 1.0n 100p 10p 100mV 1.0V 10V 40V I(V2)/(40V/100n) V(N16610) Evaluation Circuit V2 0Vdc R1 100MEG V2 = 40 V1 V1 = 0 U1 TD = 0 S30SC4MT TR = 100ns TF = 100ns PW = 100us PER = 500us 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 5
- 6. Comparison Graph Circuit Simulation Result 10000 Measurement Simulation JUNCTION CAPACITANCE 1000 Cj(pF) 100 10 0.1 1 10 REVERSE VOLTAGE:VR(V) Simulation Result Cj (pF) VR (V) %Error Measurement Simulation 0.1 1800.000 1813.700 0.76 0.2 1650.000 1670.200 1.22 0.5 1400.000 1384.200 -1.13 1 1150.000 1123.600 -2.30 2 870.000 865.789 -0.48 5 590.000 581.680 -1.41 10 415.000 420.903 1.42 20 300.000 301.076 0.36 40 215.000 214.136 -0.40 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 6
- 7. Reverse Characteristic Circuit Simulation Result 1.0mA 100uA 10uA 1.0uA 0V 10V 20V 30V 40V I(R1) V_V1 Evaluation Circuit R1 0.01m R2 100MEG V1 0Vdc U1 S30SC4MT 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 7
- 8. Comparison Graph Circuit Simulation Result 1 Measurement Simulation REVERSE CURRENT:IR(mA ) 0.1 0.01 0.001 0 5 10 15 20 25 30 35 40 REVERSE VOLTAGE：VR(V) Simulation Result IR(mA) VR(V) Error (%) Measurement Simulation 2 0.010 0.010 -4.83 5 0.013 0.013 0.97 10 0.018 0.018 -1.53 15 0.022 0.022 0.20 20 0.028 0.028 -0.73 25 0.037 0.037 -0.81 30 0.050 0.050 0.94 35 0.070 0.071 1.18 40 0.100 0.099 -0.52 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010 8