SPICE MODEL of TPCF8A01 (Professional+BDP+SBDS Model) in SPICE PARK
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The document provides a comprehensive device modeling report for a power MOSFET (part number: TPCF8A01) from Toshiba, detailing various electrical parameters and performance characteristics. It includes circuit simulation results for different tests like VGS-ID characteristics, output characteristics, and switching time, along with measurements to assess simulation accuracy. Various performance metrics such as capacitance, gate charge, and reverse recovery characteristics are also presented with associated measurement data.
SPICE MODEL of TPCF8A01 (Professional+BDP+SBDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional) PART NUMBER: TPCF8A01 MANUFACTURER: TOSHIBA Body Diode (Professional) / ESD Protection Diode Schottky Barrier Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Vgs-Id Characteristic Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_V1 Evaluation circuit U5 OP EN OP EN OP EN OP EN OP EN V2 R1 0V dc 10 0M EG V1 10 Vd c V3 0 10 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.10 1.30 1.30 -0.32 0.20 1.33 1.33 0.07 0.50 1.40 1.40 0.09 1.00 1.49 1.48 -0.51 2.00 1.60 1.60 0.00 5.00 1.84 1.84 0.19 10.00 2.15 2.13 -0.73 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Id-Rds(on) Characteristic Circuit Simulation result Evaluation circuit U2 OPEN OPEN OPEN OPEN OPEN V1 R1 0Vdc 100MEG TPCF8A01 0 VG VD 2.5Vdc 10Vdc 0 Simulation Result ID=1.5A, VGS=2.5V Measurement Simulation Error (%) R DS (on) 50.00 m 50.00 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Gate Charge Characteristic Circuit Simulation result 4V 8V VDD=16V Evaluation circuit U2 OPEN OPEN OPEN OPEN OPEN R1 100MEG PER = 1000u PW = 600u TPCF8A01 TF = 10n Dbreak 0 TR = 10n TD = 0 I2 = 1m D1 I1 I2 I1 = 0 W1 3Adc + - W IOFF = 1mA V1 ION = 0uA 16Vdc 0 Simulation Result VDD=16V,ID=3A Measurement Simulation Error (%) ,VGS=5V Qgs 1.3 nC 1.2912 nC -0.677 Qgd 2.1 nC 2.0812 nC -0.895 Qg 7.5 nC 7.5000 nC 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.50 55.00 54.65 -0.64 1.00 45.00 45.70 1.56 2.00 36.00 35.50 -1.39 5.00 23.00 22.93 -0.30 10.00 15.00 15.53 3.53 20.00 10.00 10.00 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Switching Time Characteristic Circuit Simulation result 7.0V VDS = 10V 6.0V VGS = 5V 4.0V 2.0V 0V 5.00us 5.05us 5.09us V(2) V(3)/2 Time Evaluation circuit L1 RL 3 V3 0.03uH 6.67 OPEN 0Vdc U8 Rop OPEN OPEN VDD 100MEG 10 OPEN OPEN R1 L2 0 2 0.03uH 0 V1 = 0 4.7 V1 V2 = 10 R2 TD = 5u TR = 6n 4.7 TF = 7n PW = 5u PER = 100u 0 0 0 Simulation Result ID=3A, VDD=15V Measurement Simulation Error(%) VGS=0/5V td (on) 7.50 ns 7.50 ns 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Output Characteristic Circuit Simulation result 10 3.0V 2.1V 2.0V 1.9V 1.8V 1.7V 1.6V 1.5V VGS=1.4V Evaluation circuit U2 OPEN OPEN OPEN OPEN OPEN V1 R1 0Vdc 100MEG TPCF8A01 0 VG VD 2.5Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit U2 OPEN OPEN OPEN OPEN OPEN R2 R1 0.01m 100MEG TPCF8A01 V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) Measurement Simulation %Error 0.10 0.60 0.59 -0.50 0.20 0.63 0.63 0.48 0.50 0.69 0.69 0.14 1.00 0.74 0.74 0.00 2.00 0.80 0.80 0.00 5.00 0.91 0.91 0.44 10.00 1.05 1.05 -0.10 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 14.99us 15.01us 15.03us 15.05us 15.07us I(R1) Time Evaluation Circuit R1 OPEN OPEN 50 U11 TPCF8A01 V1 = {-10} V1 V2 = {10.6} TD = 0 TR = 10n TF = 10n PW = 15u PER = 100u OPEN OPEN 0 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj 6.60 ns 6.62 ns 0.30 trb 10.40 ns 10.48 ns 0.77 trr=trj+trb 17.00 ns 17.10 ns 0.59 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 14. Reverse Recovery Characteristic Reference Trj=6.6(ns) Trb=10.4(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 15. Zener Voltage Characteristic Circuit Simulation Result Evaluation Circuit U2 OPEN OPEN OPEN OPEN OPEN OPEN R2 OPEN R1 0.01m 100MEG TPCF8A01 V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 17. Forward Current Characteristic of Schottky Barrier Diode Circuit Simulation Result Evaluation Circuit TPCF8A01 OPEN OPEN OPEN OPEN OPEN R2 U2 R1 0.01m 100MEG V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 18. Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.01 0.31 0.31 0.59 0.02 0.33 0.33 0.18 0.05 0.36 0.35 -0.87 0.10 0.38 0.37 -0.43 0.20 0.40 0.40 0.10 0.50 0.45 0.44 -0.63 1.00 0.49 0.49 0.67 2.00 0.57 0.58 1.25 5.00 0.80 0.80 -0.29 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 19. Junction Capacitance Characteristic of Schottky Barrier Diode Circuit Simulation Result Evaluation Circuit TPCF8A01 OPEN OPEN OPEN OPEN OPEN V2 U2 R1 V1 = 0 V1 0Vdc 100MEG V2 = 20 TD = 0 TR = 1u TF = 10n 0 PW = 50u PER = 100u 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 20. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Vrev(V) Measurement Simulation %Error 1.00 145.00 143.57 -0.99 2.00 110.00 110.40 0.37 5.00 75.00 74.44 -0.75 10.00 54.00 54.12 0.22 20.00 40.00 39.14 -2.15 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005